Latest revision as of 22:57, 27 November 2024

Process Control Data are standardized processes, run by the NanoFab, allowing for day-to-day or year-by-year comparisons of a tool's performance at the process level. This is similar Statistical Process Control (SPC).

These are the same links are found on individual tool pages, in the <<tool page>> > Process Control section.

Data are collected by our Process Group Interns and reviewed by Process Group Staff.

Deposition (Process Control Data)

Process Control data for various deposition tools in the lab.

PECVD #1 (PlasmaTherm 790)

PECVD #2 (Advanced Vacuum)

ICP-PECVD (Unaxis VLR Dep)

Ion Beam Sputter Deposition (Veeco Nexus)

Old Data (Pre 2022)

Old data in a different format can be found below:

Old Deposition Data - 2021-12-15

Etching (Process Control Data)

Process Control data for various dry etching tools in the lab.

PlasmaTherm SLR Fluorine Etcher

SiO₂ Etching (FL-ICP Process Control)

We have found that SiO₂ etching is fairly insensitive to chamber condition.

Old SiO₂ Process Control Data

SiO₂ Etching with CHF₃/CF₄ (FL-ICP) - No data prior to 2023-01-20

Si Etching (FL-ICP Process Control)

This Si etch is much more sensitive to chamber condition, allowing us to detect chamber contamination faster.

Recipe: SiVertHFv2 - C₄F₈/SF₆/CF₄ etch of 100mm Silicon Wafer with ~50% open area and resist mask

Panasonic ICP #1

Old Process Control Data

SiO₂ Etch with CHF₃/CF₄ (Panasonic 1) - No data prior to 2023-01-20

Panasonic ICP#2

Old Process Control Data

SiO₂ Etching with CHF₃/CF₄ - ICP2 - No data prior to 2023-01-20

Unaxis VLR Etch

InP Etching with Cl₂/N₂ @ 200°C - Unaxis Etch

Oxford PlasmaPro Cobra Etcher

InP Ridge Etch: Cl₂/CH₄/H₂/60°C

Calibration / Process testing data taken using the "InP Ridge Etch" process: Cl2/CH4/H2 @ 60°C, 1cm piece with ~50% SiO2 hardmask.

Old InP Ridge Etch Data

InP Ridge Etch with Cl₂/CH₄/H₂ @ 60°C - No data prior to 2023-01-20

GaN Etch (Cl2/BCl3/Ar/200°C)

Recipe: Std GaN Etch - BCl3/Cl2/Ar - 200C (Public), on 1cm x 1cm ~1.2µm deep GaN etch with Cl2/BCl3/Ar at 200°C. Sapphire substrate with SiO2 mask for GaN.

PlasmaTherm DSEIII Deep Silicon Etcher

Si Bosch Etching C₄F₈/SF₆/Ar

Recipe: STD_Bosch_Si (⭐️Production), on 100mm Si Wafer with ~50% open area, photoresist mask, ~40µm deep

Lithography (Process Control Data)

Process Control Data for Nanofab Lithography/patterning tools.

Stepper #3 (ASML DUV)

The Process Group regularly measures data on lithography Critical Dimension ("CD") and Wafer-stage Particulate Contamination for this tool, using a sensitive lithography process that will reveal small changes in Dose repeatability and wafer flatness.
Plots of CD Repeatability
Data for CD Uniformity and Particulate Contamination

Example of Data Table with SEM's of 320nm features. Click for full data table.

Example SPC Chart - Measured Critical Dimension "CD" versus Date. Click for charts.

@@ Line 1: / Line 1: @@
+Process Control Data are standardized processes, run by the NanoFab, allowing for day-to-day or year-by-year comparisons of a tool's performance at the process level.  This is similar [https://en.wikipedia.org/wiki/Statistical_process_control Statistical Process Control (SPC)].
-These are the same links found on individual tool pages, in the '''''Recipes > <<tool page>> > Process Control''''' section.
+These are the same links are found on individual tool pages, in the '''''<<tool page>> > Process Control''''' section.
-==Deposition (Process Control Data)==
+__TOC__
-===[[PECVD Recipes#PECVD 1 .28PlasmaTherm 790.29|PECVD #1 (PlasmaTherm 790)]]===
+Data are collected by our [https://nanofab.ucsb.edu/workforce#internships Process Group Interns] and reviewed by [[Staff List#Process Group|Process Group Staff]].
+=Deposition (Process Control Data)=
+''Process Control data for various deposition tools in the lab.''
+==[[PECVD Recipes#PECVD 1 .28PlasmaTherm 790.29|PECVD #1 (PlasmaTherm 790)]]==
 *[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD#1: Plots of all data]
@@ Line 9: / Line 15: @@
 *[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 PECVD#1: Si<sub>3</sub>N<sub>4</sub>]
-===[[PECVD Recipes#PECVD 2 .28Advanced Vacuum.29|PECVD #2 (Advanced Vacuum)]]===
+==[[PECVD Recipes#PECVD 2 .28Advanced Vacuum.29|PECVD #2 (Advanced Vacuum)]]==
 *[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD#2: Plots of all data]
@@ Line 17: / Line 23: @@
 **[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si<sub>3</sub>N<sub>4</sub> Data]
-===[[PECVD Recipes#ICP-PECVD .28Unaxis VLR.29|ICP-PECVD (Unaxis VLR Dep)]]===
+==[[PECVD Recipes#ICP-PECVD .28Unaxis VLR.29|ICP-PECVD (Unaxis VLR Dep)]]==
-*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD: Plots of all data]
+*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD: Plots of SiO<sub>2</sub> Films]
+*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=345725577 ICP-PECVD: Plots of Si<sub>3</sub>N<sub>4</sub> Films]
 *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 ICP-PECVD: SiO<sub>2</sub> Low-Dep Rate (LDR)]
 *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 ICP-PECVD: SiO<sub>2</sub> High-Dep Rate (HDR)]
@@ Line 25: / Line 32: @@
 *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 ICP-PECVD: Si<sub>3</sub>N<sub>4</sub> Low-Stress]
-===[[Sputtering Recipes#Ion Beam Deposition .28Veeco NEXUS.29|Ion Beam Sputter Deposition (Veeco Nexus)]]===
+==[[Sputtering Recipes#Ion Beam Deposition .28Veeco NEXUS.29|Ion Beam Sputter Deposition (Veeco Nexus)]]==
 *[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=2030038046 IBD: Plots of all data]
@@ Line 34: / Line 41: @@
 *[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=834404663 IBD: TiO<sub>2</sub>]
-==Etching (Process Control Data)==
+===Old Data (Pre 2022)===
+Old data in a different format can be found below:
-===[[ICP Etching Recipes#Process Control Data .28Fluorine ICP Etcher.29|PlasmaTherm SLR Fluorine Etcher]]===
+*[[Old Deposition Data - 2021-12-15]]
+<hr style="height:5px">
+<hr style="height:5px">
+=Etching (Process Control Data)=
+''Process Control data for various dry etching tools in the lab.''
+==[[ICP Etching Recipes#Process Control Data .28Fluorine ICP Etcher.29|PlasmaTherm SLR Fluorine Etcher]]==
+=== SiO<sub>2</sub> Etching (FL-ICP Process Control) ===
+''We have found that SiO<sub>2</sub> etching is fairly insensitive to chamber condition.''
+*[https://docs.google.com/spreadsheets/d/15hYkCqL3UNNayt4sXrvVi4mBj-OSdnF7PE29mQW9AEY/edit?usp=sharing SiO<sub>2</sub> Etching with CHF<sub>3</sub>/CF<sub>4</sub> - '''Etch Data''']
+*[https://docs.google.com/spreadsheets/d/15hYkCqL3UNNayt4sXrvVi4mBj-OSdnF7PE29mQW9AEY/edit#gid=1804752281 SiO<sub>2</sub> Etching with CHF<sub>3</sub>/CF<sub>4</sub> - '''Plots'''][[File:FL-ICP Process Control Data Example.jpg|alt=example of Process Control Charts|none|thumb|242x242px|[https://docs.google.com/spreadsheets/d/15hYkCqL3UNNayt4sXrvVi4mBj-OSdnF7PE29mQW9AEY/edit#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/15hYkCqL3UNNayt4sXrvVi4mBj-OSdnF7PE29mQW9AEY/edit#gid=1804752281]]
+====Old SiO<sub>2</sub> Process Control Data====
+*[[Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher|SiO<sub>2</sub> Etching with CHF<sub>3</sub>/CF<sub>4</sub> (FL-ICP]]) - ''No data prior to 2023-01-20''
+=== Si Etching (FL-ICP Process Control) ===
+''This Si etch is much more sensitive to chamber condition, allowing us to detect chamber contamination faster.''
+*'''Recipe: SiVertHFv2''' - C<sub>4</sub>F<sub>8</sub>/SF<sub>6</sub>/CF<sub>4</sub> etch of 100mm Silicon Wafer with ~50% open area and resist mask
+*[https://docs.google.com/spreadsheets/d/15iRs-JhfgkMto5rZVtG0hJjcLMiHy039_ahv2nus0UQ/edit?gid=0#gid=0 Si Etching with C<sub>4</sub>F<sub>8</sub>/SF<sub>6</sub>/CF<sub>4</sub> - '''Etch Data''']
+*[https://docs.google.com/spreadsheets/d/15iRs-JhfgkMto5rZVtG0hJjcLMiHy039_ahv2nus0UQ/edit?gid=1804752281#gid=1804752281 Si Etching with C<sub>4</sub>F<sub>8</sub>/SF<sub>6</sub>/CF<sub>4</sub> - '''Plots'''][[File:FICP-Si.png|alt=example of Process Control Charts|none|thumb|242x242px|[https://docs.google.com/spreadsheets/d/15iRs-JhfgkMto5rZVtG0hJjcLMiHy039_ahv2nus0UQ/edit?gid=1804752281#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/15iRs-JhfgkMto5rZVtG0hJjcLMiHy039_ahv2nus0UQ/edit?gid=1804752281#gid=1804752281]]
+==[[ICP Etching Recipes#Process Control Data .28Panasonic 1.29|Panasonic ICP #1]]==
+*[https://docs.google.com/spreadsheets/d/1gBqCYXSl7IqpNL-yI11cuURlfZpTWwXUVM9hY_gGpT8/edit?usp=sharing SiO<sub>2</sub> Etch with CHF<sub>3</sub>/CF<sub>4</sub> - '''Etch Data''']
+*[https://docs.google.com/spreadsheets/d/1gBqCYXSl7IqpNL-yI11cuURlfZpTWwXUVM9hY_gGpT8/edit#gid=1804752281 SiO<sub>2</sub> Etch with CHF<sub>3</sub>/CF<sub>4</sub> - '''Plots'''][[File:ICP1 Process Control Data Example.jpg|alt=example chart of ICP1 SiO2 Process Control Chart|none|thumb|250x250px|[https://docs.google.com/spreadsheets/d/1gBqCYXSl7IqpNL-yI11cuURlfZpTWwXUVM9hY_gGpT8/edit#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/1gBqCYXSl7IqpNL-yI11cuURlfZpTWwXUVM9hY_gGpT8/edit#gid=1804752281]]
+====Old Process Control Data====
+*[[Test Data of etching SiO2 with CHF3/CF4-ICP1|SiO<sub>2</sub> Etch with CHF<sub>3</sub>/CF<sub>4</sub> (Panasonic 1)]] - ''No data prior to 2023-01-20''
+==[[ICP Etching Recipes#Process Control Data .28Panasonic 2.29|Panasonic ICP#2]]==
+*[https://docs.google.com/spreadsheets/d/1m0l_UK2lDxlgww4f6nfXe4aQedNeDZsLs46jQ5wR4zw/edit?usp=sharing SiO<sub>2</sub> Etch with CHF<sub>3</sub>/CF<sub>4</sub> - '''Etch Data''']
+*[https://docs.google.com/spreadsheets/d/1m0l_UK2lDxlgww4f6nfXe4aQedNeDZsLs46jQ5wR4zw/edit#gid=1804752281 SiO<sub>2</sub> Etch with CHF<sub>3</sub>/CF<sub>4</sub> - '''Plots'''][[File:ICP2 Process Control Data Example.jpg|alt=example ICP2 process control chart|none|thumb|250x250px|[https://docs.google.com/spreadsheets/d/1m0l_UK2lDxlgww4f6nfXe4aQedNeDZsLs46jQ5wR4zw/edit#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/1m0l_UK2lDxlgww4f6nfXe4aQedNeDZsLs46jQ5wR4zw/edit#gid=1804752281]]
+====Old Process Control Data====
+*[[Test Data of etching SiO2 with CHF3/CF4|SiO<sub>2</sub> Etching with CHF<sub>3</sub>/CF<sub>4</sub> - ICP2]] - ''No data prior to 2023-01-20''
+==[[ICP Etching Recipes#Process Control Data .28Unaxis VLR.29|Unaxis VLR Etch]]==
+*[[Unaxis VLR Etch - Process Control Data|InP Etching with Cl<sub>2</sub>/N<sub>2</sub> @ 200°C - Unaxis Etch]]
+==[[ICP Etching Recipes#Process Control Data .28Oxford ICP Etcher.29|Oxford PlasmaPro Cobra Etcher]]==
+=== InP Ridge Etch: Cl<sub>2</sub>/CH<sub>4</sub>/H<sub>2</sub>/60°C ===
+''Calibration / Process testing data taken using the "InP Ridge Etch" process: Cl2/CH4/H2 @ 60°C, 1cm piece with ~50% SiO2 hardmask.''
+*[https://docs.google.com/spreadsheets/d/1cEUB7K5BAg9N4vp3rPZw7g0orFkxeQmRkX34Fb4eZco/edit?usp=sharing "Std InP Ridge Etch" Cl<sub>2</sub>/CH<sub>4</sub>/H<sub>2</sub>/60°C - '''Etch Data Tables''']
+*[https://docs.google.com/spreadsheets/d/1cEUB7K5BAg9N4vp3rPZw7g0orFkxeQmRkX34Fb4eZco/edit#gid=1804752281 "Std InP Ridge Etch" Cl<sub>2</sub>/CH<sub>4</sub>/H<sub>2</sub>/60°C - '''Plots'''][[File:Oxford-ICP-Etch Process Control Data Example.jpg|alt=example SPC chart for Oxford ICP Etcher|none|thumb|276x276px|[https://docs.google.com/spreadsheets/d/1cEUB7K5BAg9N4vp3rPZw7g0orFkxeQmRkX34Fb4eZco/edit#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/1cEUB7K5BAg9N4vp3rPZw7g0orFkxeQmRkX34Fb4eZco/edit#gid=1804752281]]
+====Old InP Ridge Etch Data====
+*[[Oxford ICP Etcher - Process Control Data|InP Ridge Etch with Cl<sub>2</sub>/CH<sub>4</sub>/H<sub>2</sub> @ 60°C]] - ''No data prior to 2023-01-20''
+=== GaN Etch (Cl2/BCl3/Ar/200°C) ===
-*[[Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher|SiO<sub>2</sub> Etching with CHF3/CF4-Fluorine ICP Etcher]]
+Recipe: ''Std GaN Etch - BCl3/Cl2/Ar - 200C (Public)'', on 1cm x 1cm ''~1.2µm deep GaN etch with Cl2/BCl3/Ar at 200°C.'' Sapphire substrate with SiO2 mask for GaN.
+* [https://docs.google.com/spreadsheets/d/1Pk8VwZlZ2lUf3aL9J2El5ZygqHY040TX3ZAMwa33LpE/edit?gid=0#gid=0 GaN Etching with Cl2/BCl3/Ar at 200°C - Etch Data]
-===[[ICP Etching Recipes#Process Control Data .28Panasonic 1.29|Panasonic ICP #1]]===
+* [https://docs.google.com/spreadsheets/d/1Pk8VwZlZ2lUf3aL9J2El5ZygqHY040TX3ZAMwa33LpE/edit?gid=507237279#gid=507237279 GaN Etching with Cl2/BCl3/Ar at 200°C - Plots][[File:GaN SPC.png|alt=example of Process Control Charts|none|thumb|[https://docs.google.com/spreadsheets/d/1Pk8VwZlZ2lUf3aL9J2El5ZygqHY040TX3ZAMwa33LpE/edit?gid=507237279#gid=507237279 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/1Pk8VwZlZ2lUf3aL9J2El5ZygqHY040TX3ZAMwa33LpE/edit?gid=507237279#gid=507237279]]
+<hr style="height:5px">
+<hr style="height:5px">
+== [[DSEIII (PlasmaTherm/Deep Silicon Etcher)|PlasmaTherm DSEIII Deep Silicon Etcher]] ==
-*[[Test Data of etching SiO2 with CHF3/CF4-ICP1|SiO2 Etching with CHF3/CF4 - ICP1]]
+=== '''Si Bosch Etching C<sub>4</sub>F<sub>8</sub>/SF<sub>6</sub>/Ar''' ===
-===[[ICP Etching Recipes#Process Control Data .28Panasonic 2.29|Panasonic ICP#2]]===
+*Recipe: ''STD_Bosch_Si (⭐️Production),'' on 100mm Si Wafer with ~50% open area, photoresist mask, ~40µm deep
+*[https://docs.google.com/spreadsheets/d/1xQcdUH560nT928miZMeP7xxQSwHz_a_EB9s_Kb1LSfg/edit?gid=0#gid=0 Si Etching with C<sub>4</sub>F<sub>8</sub>/SF<sub>6</sub>/Ar - '''Etch Data''']
-*[[Test Data of etching SiO2 with CHF3/CF4|SiO2 Etching with CHF3/CF4 - ICP2]]
+*[https://docs.google.com/spreadsheets/d/1xQcdUH560nT928miZMeP7xxQSwHz_a_EB9s_Kb1LSfg/edit?gid=1804752281#gid=1804752281 Si Etching with C<sub>4</sub>F<sub>8</sub>/SF<sub>6</sub>/Ar - '''Plots'''][[File:DSE plot.png|alt=example of Process Control Charts|none|thumb|[https://docs.google.com/spreadsheets/d/1xQcdUH560nT928miZMeP7xxQSwHz_a_EB9s_Kb1LSfg/edit?gid=1804752281#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/1xQcdUH560nT928miZMeP7xxQSwHz_a_EB9s_Kb1LSfg/edit?gid=1804752281#gid=1804752281]]
+<hr style="height:5px">
+<hr style="height:5px">
-===[[ICP Etching Recipes#Process Control Data .28Unaxis VLR.29|Unaxis VLR Etch]]===
+=Lithography (Process Control Data)=
+''Process Control Data for Nanofab Lithography/patterning tools.''
+==[[Stepper_Recipes#Stepper_3_.28ASML_DUV.29|Stepper #3 (ASML DUV)]]==
-*[[Unaxis VLR Etch - Process Control Data|InP Etching with Cl2/N2 @ 200°C - Unaxis Etch]]
+*''The Process Group regularly measures data on lithography Critical Dimension ("CD") and Wafer-stage Particulate Contamination for this tool, using a sensitive lithography process that will reveal small changes in Dose repeatability and wafer flatness.''
-===[[ICP Etching Recipes#Process Control Data .28Oxford ICP Etcher.29|Oxford PlasmaPro Cobra Etcher]]===
+*[https://docs.google.com/spreadsheets/d/1xW1TFH_QjPMWl9T1jiKzwmYe4B2wg7KY-nqOKUoXttI/edit#gid=1804752281 '''Plots of CD Repeatability''']
+*[https://docs.google.com/spreadsheets/d/1xW1TFH_QjPMWl9T1jiKzwmYe4B2wg7KY-nqOKUoXttI/edit#gid=0 '''Data for CD Uniformity and Particulate Contamination''']
+:{|
-*[[Oxford ICP Etcher - Process Control Data|InP Ridge Etch with Cl2/CH4/H2 @ 60°C]]
+|[[File:ASML CD Cals - Example Table.jpg|alt=ASML CD Calibration data - Screenshot of Table|none|thumb|300x300px|''Example of Data Table with SEM's of 320nm features. [https://docs.google.com/spreadsheets/d/1xW1TFH_QjPMWl9T1jiKzwmYe4B2wg7KY-nqOKUoXttI/edit#gid=0 Click for full data table.]''|link=https://docs.google.com/spreadsheets/d/1xW1TFH_QjPMWl9T1jiKzwmYe4B2wg7KY-nqOKUoXttI/edit#gid=0]]
+|[[File:ASML CD Cals - Example Plot.jpg|alt=ASML CD Calibration Data - Screenshot of SPC Plot|none|thumb|''Example SPC Chart - Measured Critical Dimension "CD" versus Date. [https://docs.google.com/spreadsheets/d/1xW1TFH_QjPMWl9T1jiKzwmYe4B2wg7KY-nqOKUoXttI/edit#gid=1804752281 Click for charts.]''|link=https://docs.google.com/spreadsheets/d/1xW1TFH_QjPMWl9T1jiKzwmYe4B2wg7KY-nqOKUoXttI/edit#gid=1804752281]]
+|}

Process Group - Process Control Data: Difference between revisions

Latest revision as of 22:57, 27 November 2024

Contents

Deposition (Process Control Data)

PECVD #1 (PlasmaTherm 790)

PECVD #2 (Advanced Vacuum)

ICP-PECVD (Unaxis VLR Dep)