Process Group - Process Control Data: Difference between revisions

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Process Control Data are standardized processes, run by the NanoFab, allowing for day-to-day or year-by-year comparisons of a tool's performance at the process level. This is similar [https://en.wikipedia.org/wiki/Statistical_process_control Statistical Process Control (SPC)].
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These are the same links found on individual tool pages, in the '''''Recipes > <<tool page>> > Process Control''''' section.


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These are the same links are found on individual tool pages, in the '''''<<tool page>> > Process Control''''' section.
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= Lithography (Process Control Data) =
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''Process Control Data for Nanofab Lithography/patterning tools.''


__TOC__
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== [[Stepper_Recipes#Stepper_3_.28ASML_DUV.29|Stepper #3 (ASML DUV)]] ==


Data are collected by our [https://nanofab.ucsb.edu/workforce#internships Process Group Interns] and reviewed by [[Staff List#Process Group|Process Group Staff]].
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*''The Process Group regularly measures data on lithography Critical Dimension ("CD") and Wafer-stage Particulate Contamination for this tool, using a sensitive lithography process that will reveal small changes in Dose repeatability and wafer flatness.''
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*[https://docs.google.com/spreadsheets/d/1xW1TFH_QjPMWl9T1jiKzwmYe4B2wg7KY-nqOKUoXttI/edit#gid=1804752281 '''Plots of CD Repeatability''']
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*[https://docs.google.com/spreadsheets/d/1xW1TFH_QjPMWl9T1jiKzwmYe4B2wg7KY-nqOKUoXttI/edit#gid=0 '''Data for CD Uniformity and Particulate Contamination''']


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<hr style="height:5px">
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<hr style="height:5px">
=Deposition (Process Control Data)=
=Deposition (Process Control Data)=
''Process Control data for various deposition tools in the lab.''
''Process Control data for various deposition tools in the lab.''
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==[[ICP Etching Recipes#Process Control Data .28Fluorine ICP Etcher.29|PlasmaTherm SLR Fluorine Etcher]]==
==[[ICP Etching Recipes#Process Control Data .28Fluorine ICP Etcher.29|PlasmaTherm SLR Fluorine Etcher]]==


=== SiO<sub>2</sub> Etching (FL-ICP Process Control) ===
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*[https://docs.google.com/spreadsheets/d/15hYkCqL3UNNayt4sXrvVi4mBj-OSdnF7PE29mQW9AEY/edit?usp=sharing SiO<sub>2</sub> Etching with CHF3/CF4 - '''Etch Data''']
''We have found that SiO<sub>2</sub> etching is fairly insensitive to chamber condition.''
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*[https://docs.google.com/spreadsheets/d/15hYkCqL3UNNayt4sXrvVi4mBj-OSdnF7PE29mQW9AEY/edit#gid=1804752281 SiO<sub>2</sub> Etching with CHF3/CF4 - '''Plots'''][[File:FL-ICP Process Control Data Example.jpg|alt=example of Process Control Charts|none|thumb|242x242px|[https://docs.google.com/spreadsheets/d/15hYkCqL3UNNayt4sXrvVi4mBj-OSdnF7PE29mQW9AEY/edit#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/15hYkCqL3UNNayt4sXrvVi4mBj-OSdnF7PE29mQW9AEY/edit#gid=1804752281]]
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*[https://docs.google.com/spreadsheets/d/15hYkCqL3UNNayt4sXrvVi4mBj-OSdnF7PE29mQW9AEY/edit?usp=sharing SiO<sub>2</sub> Etching with CHF<sub>3</sub>/CF<sub>4</sub> - '''Etch Data''']
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*[https://docs.google.com/spreadsheets/d/15hYkCqL3UNNayt4sXrvVi4mBj-OSdnF7PE29mQW9AEY/edit#gid=1804752281 SiO<sub>2</sub> Etching with CHF<sub>3</sub>/CF<sub>4</sub> - '''Plots'''][[File:FL-ICP Process Control Data Example.jpg|alt=example of Process Control Charts|none|thumb|242x242px|[https://docs.google.com/spreadsheets/d/15hYkCqL3UNNayt4sXrvVi4mBj-OSdnF7PE29mQW9AEY/edit#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/15hYkCqL3UNNayt4sXrvVi4mBj-OSdnF7PE29mQW9AEY/edit#gid=1804752281]]


====OLD Process Control Data====
====Old SiO<sub>2</sub> Process Control Data====


*[[Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher|SiO<sub>2</sub> Etching with CHF3/CF4 (FL-ICP]]) - ''No data prior to 2023-01-20''
*[[Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher|SiO<sub>2</sub> Etching with CHF<sub>3</sub>/CF<sub>4</sub> (FL-ICP]]) - ''No data prior to 2023-01-20''


=== Si Etching (FL-ICP Process Control) ===
''This Si etch is much more sensitive to chamber condition, allowing us to detect chamber contamination faster.''

*'''Recipe: SiVertHFv2''' - C<sub>4</sub>F<sub>8</sub>/SF<sub>6</sub>/CF<sub>4</sub> etch of 100mm Silicon Wafer with ~50% open area and resist mask

*[https://docs.google.com/spreadsheets/d/15iRs-JhfgkMto5rZVtG0hJjcLMiHy039_ahv2nus0UQ/edit?gid=0#gid=0 Si Etching with C<sub>4</sub>F<sub>8</sub>/SF<sub>6</sub>/CF<sub>4</sub> - '''Etch Data''']
*[https://docs.google.com/spreadsheets/d/15iRs-JhfgkMto5rZVtG0hJjcLMiHy039_ahv2nus0UQ/edit?gid=1804752281#gid=1804752281 Si Etching with C<sub>4</sub>F<sub>8</sub>/SF<sub>6</sub>/CF<sub>4</sub> - '''Plots'''][[File:FICP-Si.png|alt=example of Process Control Charts|none|thumb|242x242px|[https://docs.google.com/spreadsheets/d/15iRs-JhfgkMto5rZVtG0hJjcLMiHy039_ahv2nus0UQ/edit?gid=1804752281#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/15iRs-JhfgkMto5rZVtG0hJjcLMiHy039_ahv2nus0UQ/edit?gid=1804752281#gid=1804752281]]
==[[ICP Etching Recipes#Process Control Data .28Panasonic 1.29|Panasonic ICP #1]]==
==[[ICP Etching Recipes#Process Control Data .28Panasonic 1.29|Panasonic ICP #1]]==


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==[[ICP Etching Recipes#Process Control Data .28Panasonic 2.29|Panasonic ICP#2]]==
==[[ICP Etching Recipes#Process Control Data .28Panasonic 2.29|Panasonic ICP#2]]==


*[https://docs.google.com/spreadsheets/d/1m0l_UK2lDxlgww4f6nfXe4aQedNeDZsLs46jQ5wR4zw/edit?usp=sharing SiO2 Etch with CHF3/CF4 - '''Etch Data''']
*[https://docs.google.com/spreadsheets/d/1m0l_UK2lDxlgww4f6nfXe4aQedNeDZsLs46jQ5wR4zw/edit?usp=sharing SiO<sub>2</sub> Etch with CHF<sub>3</sub>/CF<sub>4</sub> - '''Etch Data''']
*[https://docs.google.com/spreadsheets/d/1m0l_UK2lDxlgww4f6nfXe4aQedNeDZsLs46jQ5wR4zw/edit#gid=1804752281 SiO2 Etch with CHF3/CF4 - '''Plots'''][[File:ICP2 Process Control Data Example.jpg|alt=example ICP2 process control chart|none|thumb|250x250px|[https://docs.google.com/spreadsheets/d/1m0l_UK2lDxlgww4f6nfXe4aQedNeDZsLs46jQ5wR4zw/edit#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/1m0l_UK2lDxlgww4f6nfXe4aQedNeDZsLs46jQ5wR4zw/edit#gid=1804752281]]
*[https://docs.google.com/spreadsheets/d/1m0l_UK2lDxlgww4f6nfXe4aQedNeDZsLs46jQ5wR4zw/edit#gid=1804752281 SiO<sub>2</sub> Etch with CHF<sub>3</sub>/CF<sub>4</sub> - '''Plots'''][[File:ICP2 Process Control Data Example.jpg|alt=example ICP2 process control chart|none|thumb|250x250px|[https://docs.google.com/spreadsheets/d/1m0l_UK2lDxlgww4f6nfXe4aQedNeDZsLs46jQ5wR4zw/edit#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/1m0l_UK2lDxlgww4f6nfXe4aQedNeDZsLs46jQ5wR4zw/edit#gid=1804752281]]


====Old Process Control Data====
====Old Process Control Data====


*[[Test Data of etching SiO2 with CHF3/CF4|SiO2 Etching with CHF3/CF4 - ICP2]] - ''No data prior to 2023-01-20''
*[[Test Data of etching SiO2 with CHF3/CF4|SiO<sub>2</sub> Etching with CHF<sub>3</sub>/CF<sub>4</sub> - ICP2]] - ''No data prior to 2023-01-20''


==[[ICP Etching Recipes#Process Control Data .28Unaxis VLR.29|Unaxis VLR Etch]]==
==[[ICP Etching Recipes#Process Control Data .28Unaxis VLR.29|Unaxis VLR Etch]]==


*[[Unaxis VLR Etch - Process Control Data|InP Etching with Cl2/N2 @ 200°C - Unaxis Etch]]
*[[Unaxis VLR Etch - Process Control Data|InP Etching with Cl<sub>2</sub>/N<sub>2</sub> @ 200°C - Unaxis Etch]]


==[[ICP Etching Recipes#Process Control Data .28Oxford ICP Etcher.29|Oxford PlasmaPro Cobra Etcher]]==
==[[ICP Etching Recipes#Process Control Data .28Oxford ICP Etcher.29|Oxford PlasmaPro Cobra Etcher]]==

=== InP Ridge Etch: Cl<sub>2</sub>/CH<sub>4</sub>/H<sub>2</sub>/60°C ===
''Calibration / Process testing data taken using the "InP Ridge Etch" process: Cl2/CH4/H2 @ 60°C, 1cm piece with ~50% SiO2 hardmask.''
''Calibration / Process testing data taken using the "InP Ridge Etch" process: Cl2/CH4/H2 @ 60°C, 1cm piece with ~50% SiO2 hardmask.''


*[https://docs.google.com/spreadsheets/d/1cEUB7K5BAg9N4vp3rPZw7g0orFkxeQmRkX34Fb4eZco/edit?usp=sharing "Std InP Ridge Etch" Cl<sub>2</sub>/CH<sub>4</sub>/H<sub>2</sub>/60°C - '''Etch Data Tables''']
*[https://docs.google.com/spreadsheets/d/1cEUB7K5BAg9N4vp3rPZw7g0orFkxeQmRkX34Fb4eZco/edit?usp=sharing "Std InP Ridge Etch" Cl<sub>2</sub>/CH<sub>4</sub>/H<sub>2</sub>/60°C - '''Etch Data Tables''']
*[https://docs.google.com/spreadsheets/d/1cEUB7K5BAg9N4vp3rPZw7g0orFkxeQmRkX34Fb4eZco/edit#gid=1804752281 "Std InP Ridge Etch" Cl<sub>2</sub>/CH<sub>4</sub>/H<sub>2</sub>/60°C - '''Plots'''][[File:Oxford-ICP-Etch Process Control Data Example.jpg|alt=example SPC chart for Oxford ICP Etcher|none|thumb|225x225px|[https://docs.google.com/spreadsheets/d/1cEUB7K5BAg9N4vp3rPZw7g0orFkxeQmRkX34Fb4eZco/edit#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/1cEUB7K5BAg9N4vp3rPZw7g0orFkxeQmRkX34Fb4eZco/edit#gid=1804752281]]
*[https://docs.google.com/spreadsheets/d/1cEUB7K5BAg9N4vp3rPZw7g0orFkxeQmRkX34Fb4eZco/edit#gid=1804752281 "Std InP Ridge Etch" Cl<sub>2</sub>/CH<sub>4</sub>/H<sub>2</sub>/60°C - '''Plots'''][[File:Oxford-ICP-Etch Process Control Data Example.jpg|alt=example SPC chart for Oxford ICP Etcher|none|thumb|276x276px|[https://docs.google.com/spreadsheets/d/1cEUB7K5BAg9N4vp3rPZw7g0orFkxeQmRkX34Fb4eZco/edit#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/1cEUB7K5BAg9N4vp3rPZw7g0orFkxeQmRkX34Fb4eZco/edit#gid=1804752281]]


====Old Process Control Data====
====Old InP Ridge Etch Data====

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*[[Oxford ICP Etcher - Process Control Data|InP Ridge Etch with Cl<sub>2</sub>/CH<sub>4</sub>/H<sub>2</sub> @ 60°C]] - ''No data prior to 2023-01-20''

=== GaN Etch (Cl2/BCl3/Ar/200°C) ===
Recipe: ''Std GaN Etch - BCl3/Cl2/Ar - 200C (Public)'', on 1cm x 1cm ''~1.2µm deep GaN etch with Cl2/BCl3/Ar at 200°C.'' Sapphire substrate with SiO2 mask for GaN.

* [https://docs.google.com/spreadsheets/d/1Pk8VwZlZ2lUf3aL9J2El5ZygqHY040TX3ZAMwa33LpE/edit?gid=0#gid=0 GaN Etching with Cl2/BCl3/Ar at 200°C - Etch Data]
* [https://docs.google.com/spreadsheets/d/1Pk8VwZlZ2lUf3aL9J2El5ZygqHY040TX3ZAMwa33LpE/edit?gid=507237279#gid=507237279 GaN Etching with Cl2/BCl3/Ar at 200°C - Plots][[File:GaN SPC.png|alt=example of Process Control Charts|none|thumb|[https://docs.google.com/spreadsheets/d/1Pk8VwZlZ2lUf3aL9J2El5ZygqHY040TX3ZAMwa33LpE/edit?gid=507237279#gid=507237279 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/1Pk8VwZlZ2lUf3aL9J2El5ZygqHY040TX3ZAMwa33LpE/edit?gid=507237279#gid=507237279]]
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<hr style="height:5px">

== [[DSEIII (PlasmaTherm/Deep Silicon Etcher)|PlasmaTherm DSEIII Deep Silicon Etcher]] ==

=== '''Si Bosch Etching C<sub>4</sub>F<sub>8</sub>/SF<sub>6</sub>/Ar''' ===
*Recipe: ''STD_Bosch_Si (⭐️Production),'' on 100mm Si Wafer with ~50% open area, photoresist mask, ~40µm deep

*[https://docs.google.com/spreadsheets/d/1xQcdUH560nT928miZMeP7xxQSwHz_a_EB9s_Kb1LSfg/edit?gid=0#gid=0 Si Etching with C<sub>4</sub>F<sub>8</sub>/SF<sub>6</sub>/Ar - '''Etch Data''']
*[https://docs.google.com/spreadsheets/d/1xQcdUH560nT928miZMeP7xxQSwHz_a_EB9s_Kb1LSfg/edit?gid=1804752281#gid=1804752281 Si Etching with C<sub>4</sub>F<sub>8</sub>/SF<sub>6</sub>/Ar - '''Plots'''][[File:DSE plot.png|alt=example of Process Control Charts|none|thumb|[https://docs.google.com/spreadsheets/d/1xQcdUH560nT928miZMeP7xxQSwHz_a_EB9s_Kb1LSfg/edit?gid=1804752281#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/1xQcdUH560nT928miZMeP7xxQSwHz_a_EB9s_Kb1LSfg/edit?gid=1804752281#gid=1804752281]]
<hr style="height:5px">
<hr style="height:5px">

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=Lithography (Process Control Data)=
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''Process Control Data for Nanofab Lithography/patterning tools.''

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==[[Stepper_Recipes#Stepper_3_.28ASML_DUV.29|Stepper #3 (ASML DUV)]]==

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*''The Process Group regularly measures data on lithography Critical Dimension ("CD") and Wafer-stage Particulate Contamination for this tool, using a sensitive lithography process that will reveal small changes in Dose repeatability and wafer flatness.''
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*[https://docs.google.com/spreadsheets/d/1xW1TFH_QjPMWl9T1jiKzwmYe4B2wg7KY-nqOKUoXttI/edit#gid=1804752281 '''Plots of CD Repeatability''']
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*[https://docs.google.com/spreadsheets/d/1xW1TFH_QjPMWl9T1jiKzwmYe4B2wg7KY-nqOKUoXttI/edit#gid=0 '''Data for CD Uniformity and Particulate Contamination''']


:{|
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*[[Oxford ICP Etcher - Process Control Data|InP Ridge Etch with Cl2/CH4/H2 @ 60°C]] - ''No data prior to 2023-01-20''
|[[File:ASML CD Cals - Example Table.jpg|alt=ASML CD Calibration data - Screenshot of Table|none|thumb|300x300px|''Example of Data Table with SEM's of 320nm features. [https://docs.google.com/spreadsheets/d/1xW1TFH_QjPMWl9T1jiKzwmYe4B2wg7KY-nqOKUoXttI/edit#gid=0 Click for full data table.]''|link=https://docs.google.com/spreadsheets/d/1xW1TFH_QjPMWl9T1jiKzwmYe4B2wg7KY-nqOKUoXttI/edit#gid=0]]
|[[File:ASML CD Cals - Example Plot.jpg|alt=ASML CD Calibration Data - Screenshot of SPC Plot|none|thumb|''Example SPC Chart - Measured Critical Dimension "CD" versus Date. [https://docs.google.com/spreadsheets/d/1xW1TFH_QjPMWl9T1jiKzwmYe4B2wg7KY-nqOKUoXttI/edit#gid=1804752281 Click for charts.]''|link=https://docs.google.com/spreadsheets/d/1xW1TFH_QjPMWl9T1jiKzwmYe4B2wg7KY-nqOKUoXttI/edit#gid=1804752281]]
|}

Latest revision as of 22:57, 27 November 2024

Process Control Data are standardized processes, run by the NanoFab, allowing for day-to-day or year-by-year comparisons of a tool's performance at the process level. This is similar Statistical Process Control (SPC).

These are the same links are found on individual tool pages, in the <<tool page>> > Process Control section.

Data are collected by our Process Group Interns and reviewed by Process Group Staff.

Deposition (Process Control Data)

Process Control data for various deposition tools in the lab.

PECVD #1 (PlasmaTherm 790)

PECVD #2 (Advanced Vacuum)

ICP-PECVD (Unaxis VLR Dep)

Ion Beam Sputter Deposition (Veeco Nexus)

Old Data (Pre 2022)

Old data in a different format can be found below:


Etching (Process Control Data)

Process Control data for various dry etching tools in the lab.

PlasmaTherm SLR Fluorine Etcher

SiO2 Etching (FL-ICP Process Control)

We have found that SiO2 etching is fairly insensitive to chamber condition.

Old SiO2 Process Control Data

Si Etching (FL-ICP Process Control)

This Si etch is much more sensitive to chamber condition, allowing us to detect chamber contamination faster.

  • Recipe: SiVertHFv2 - C4F8/SF6/CF4 etch of 100mm Silicon Wafer with ~50% open area and resist mask

Panasonic ICP #1

Old Process Control Data

Panasonic ICP#2

Old Process Control Data

Unaxis VLR Etch

Oxford PlasmaPro Cobra Etcher

InP Ridge Etch: Cl2/CH4/H2/60°C

Calibration / Process testing data taken using the "InP Ridge Etch" process: Cl2/CH4/H2 @ 60°C, 1cm piece with ~50% SiO2 hardmask.

Old InP Ridge Etch Data

GaN Etch (Cl2/BCl3/Ar/200°C)

Recipe: Std GaN Etch - BCl3/Cl2/Ar - 200C (Public), on 1cm x 1cm ~1.2µm deep GaN etch with Cl2/BCl3/Ar at 200°C. Sapphire substrate with SiO2 mask for GaN.

PlasmaTherm DSEIII Deep Silicon Etcher

Si Bosch Etching C4F8/SF6/Ar

  • Recipe: STD_Bosch_Si (⭐️Production), on 100mm Si Wafer with ~50% open area, photoresist mask, ~40µm deep

Lithography (Process Control Data)

Process Control Data for Nanofab Lithography/patterning tools.

Stepper #3 (ASML DUV)

ASML CD Calibration data - Screenshot of Table
Example of Data Table with SEM's of 320nm features. Click for full data table.
ASML CD Calibration Data - Screenshot of SPC Plot
Example SPC Chart - Measured Critical Dimension "CD" versus Date. Click for charts.
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