Oxford ICP Etcher (PlasmaPro 100 Cobra): Difference between revisions

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(→‎GaN Etch (Cl2/BCl3/Ar/200°C): Added recipe name for GaN)
 
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{{tool|{{PAGENAME}}
{{tool2|{{PAGENAME}}
|picture=OxfordPlasmaPro.jpg
|picture=OxfordPlasmaPro.jpg
|type = Dry Etch
|type = Dry Etch
|super= Tony Bosch
|super= Tony Bosch
|super2= Bill Millerski
|location=Bay 2
|location=Bay 2
|description = ICP Etches for III-V/ALE
|description = ICP Etches for III-V/ALE
Line 32: Line 33:
*Allowed Materials:
*Allowed Materials:
**InP-based epitaxies - ''qualified and ready''
**InP-based epitaxies - ''qualified and ready''
**GaAs-baased epitaxies - ''discuss with staff''
**GaAs-baased epitaxies - ''starter recipe is available''
**GaN-based epitaxies - ''discuss with staff''
**GaN-based epitaxies - ''starter recipe is available''
**GaSb-based epitaxies - ''discuss with staff''
**GaSb-based epitaxies - ''starter recipe is available''
**Atomic Layer Etching on select materials - ''discuss with staff''
**Atomic Layer Etching on select materials - ''starter recipe is available''
*Standard masking materials include:
*Standard masking materials include:
**SiO<sub>2</sub>
**SiO<sub>2</sub>
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==Documentation==
==Documentation==


*{{file|Oxford PLasmaPro Operating Instructions.pdf|Oxford PlasmaPro Operating Instructions}}
*{{file|Oxford_Cobra_300_SOP_v2021-12-14.pdf|Oxford PlasmaPro Operating Instructions|}}
**''Includes "Travelers" and post-cleaning for each type of standard etch (InP, GaAs, GaN)''
*[[Laser Etch Monitoring|Laser Etch Monitoring procedures]]
*[[Laser Etch Monitoring|Laser Etch Monitoring procedures]]
*Online Training Video:

**[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=de1bb5fd-628f-4e70-b820-ae13010ee80b <u>Oxford Cobra 300 Training</u>]
**'''Important:''' ''This video is for reference only, and does not give you authorization to use the tool. You must be officially authorized by the supervisor before using this machine.''


==Recipes==
==Recipes==
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*'''[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford PlasmaPro Recipes]]''' - Recipes specific to this tool.
*'''[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford PlasmaPro Recipes]]''' - Recipes specific to this tool.
*All [[Dry Etching Recipes]] - use this list to see other options for dry etching various materials.
*All [[Dry Etching Recipes]] - use this list to see other options for dry etching various materials.

=== [[ICP Etching Recipes#Process Control Data .28Oxford ICP Etcher.29|Process Control Data]] ===
''Click above for calibration etch data for verifying tool performance over time.''

==== [https://docs.google.com/spreadsheets/d/1cEUB7K5BAg9N4vp3rPZw7g0orFkxeQmRkX34Fb4eZco/edit#gid=1804752281 Std InP Ridge Etch: Cl<sub>2</sub>/CH<sub>4</sub>/H<sub>2</sub>/60°C] ====
''Calibration / Process testing data taken using the "InP Ridge Etch" process: Cl2/CH4/H2 @ 60°C, 1cm piece with ~50% SiO2 hardmask.''

*[https://docs.google.com/spreadsheets/d/1cEUB7K5BAg9N4vp3rPZw7g0orFkxeQmRkX34Fb4eZco/edit?usp=sharing "Std InP Ridge Etch" Cl<sub>2</sub>/CH<sub>4</sub>/H<sub>2</sub>/60°C - '''Etch Data Tables''']
*[https://docs.google.com/spreadsheets/d/1cEUB7K5BAg9N4vp3rPZw7g0orFkxeQmRkX34Fb4eZco/edit#gid=1804752281 "Std InP Ridge Etch" Cl<sub>2</sub>/CH<sub>4</sub>/H<sub>2</sub>/60°C - '''Plots'''][[File:Oxford-ICP-Etch Process Control Data Example.jpg|alt=example SPC chart for Oxford ICP Etcher|none|thumb|225x225px|[https://docs.google.com/spreadsheets/d/1cEUB7K5BAg9N4vp3rPZw7g0orFkxeQmRkX34Fb4eZco/edit#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/1cEUB7K5BAg9N4vp3rPZw7g0orFkxeQmRkX34Fb4eZco/edit#gid=1804752281]]

==== GaN Etch (Cl2/BCl3/Ar/200°C) ====
Recipe: ''Std GaN Etch - BCl3/Cl2/Ar - 200C (Public)'', on 1cm x 1cm ''~1.2µm deep GaN etch with Cl2/BCl3/Ar at 200°C.'' Sapphire substrate with SiO2 mask for GaN.
*[https://docs.google.com/spreadsheets/d/1Pk8VwZlZ2lUf3aL9J2El5ZygqHY040TX3ZAMwa33LpE/edit?gid=0#gid=0 GaN Etching with Cl2/BCl3/Ar at 200°C - Etch Data]
*[https://docs.google.com/spreadsheets/d/1Pk8VwZlZ2lUf3aL9J2El5ZygqHY040TX3ZAMwa33LpE/edit?gid=507237279#gid=507237279 GaN Etching with Cl2/BCl3/Ar at 200°C - Plots][[File:GaN SPC.png|alt=example of Process Control Charts|none|thumb|[https://docs.google.com/spreadsheets/d/1Pk8VwZlZ2lUf3aL9J2El5ZygqHY040TX3ZAMwa33LpE/edit?gid=507237279#gid=507237279 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/1Pk8VwZlZ2lUf3aL9J2El5ZygqHY040TX3ZAMwa33LpE/edit?gid=507237279#gid=507237279]]<hr style="height:5px">

Latest revision as of 23:04, 27 November 2024

Oxford ICP Etcher (PlasmaPro 100 Cobra)
OxfordPlasmaPro.jpg
Location Bay 2
Tool Type Dry Etch
Manufacturer Oxford Instruments
Model PlasmaPro 100 Cobra 300
Description ICP Etches for III-V/ALE

Primary Supervisor Tony Bosch
(805) 893-3486
bosch@ece.ucsb.edu

Secondary Supervisor

Bill Millerski


Materials InP, GaAs, GaN, Silicon ALE
Recipes Dry Etch Recipes


About

The Oxford PlasmaPro 100 Cobra 300 is intended for etching InP-based, GaAs-baased and GaN-based epitaxies, in addition to Atomic Layer Etching (ALE) processes. The system has a load lock, wide temperature range with rapid heating/cooling, Inductively Coupled Plasma (ICP) coil and a capactively coupled substrate HF (13.56MHz) The fixturing is configured for 4" diameter Si wafers and uses a clamp to hold the sample on the RF chuck. Small pieces may be placed on Silicon carrier wafers, with or without mounting adhesive. Helium back-side cooling is used to keep the sample cool during the etch, but pieces do heat up when placed on carriers.

The in-situ laser monitor installed on this system allows for repeatable etches and endpoint detection via continuous optical monitoring of the wafer reflectivity in a user-determined location, through a porthole on the chamber. The system also has an in situ optical emission monitor for plasma spectroscopy, utilized for chamber clean endpoint detection.

Detailed Specifications

  • Temperature Range: –150°C to +400°C
  • Gases Available: CH4, H2, Ar, Cl2, BCl3, SF6, SiCl4, O2, N2
  • ICP Power (max): 3000 W
  • RF Power (max): 600 W
  • He-back-side cooling
  • 100mm wafer held down with ceramic clamp., single-load
    • Users may place pieces onto carrier wafer with or without adhesive. Standard recipes use no adhesive.
    • Pieces must be >7mm from edge of carrier to avoid wafer-clamping mechanism.
  • Windows-based Cortex software control of process and wafer handling
  • Allowed Materials:
    • InP-based epitaxies - qualified and ready
    • GaAs-baased epitaxies - starter recipe is available
    • GaN-based epitaxies - starter recipe is available
    • GaSb-based epitaxies - starter recipe is available
    • Atomic Layer Etching on select materials - starter recipe is available
  • Standard masking materials include:
    • SiO2
    • Si3N4
    • photoresist (at << 100°C).

Other materials can be exposed to the chamber only with staff approval.

  • Laser monitoring with camera and etch simulation software: Intellemetrics LEP 500
  • Optical Emission Spectroscopy (Ocean Optics) for endpoint detection of chamber cleans & etches - integrated into Oxford software

Documentation

Recipes

Process Control Data

Click above for calibration etch data for verifying tool performance over time.

Std InP Ridge Etch: Cl2/CH4/H2/60°C

Calibration / Process testing data taken using the "InP Ridge Etch" process: Cl2/CH4/H2 @ 60°C, 1cm piece with ~50% SiO2 hardmask.

GaN Etch (Cl2/BCl3/Ar/200°C)

Recipe: Std GaN Etch - BCl3/Cl2/Ar - 200C (Public), on 1cm x 1cm ~1.2µm deep GaN etch with Cl2/BCl3/Ar at 200°C. Sapphire substrate with SiO2 mask for GaN.