Dry Etching Recipes: Difference between revisions

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| colspan="11" |Process has been run at least once
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| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' lookahead/in-situ control available
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[[Category:Processing]]
[[Category:Processing]]

Latest revision as of 20:00, 22 August 2025

Process Control Data

See above linked page for process control data (dep rate/stress etc. over time), for a selection of often-used dry etches

Dry Etching Tools/Materials Table

Process Maturity Ranking

  • R6 - most mature process with regular calibrations recorded on SPC charts.
  • …
  • R1 - least mature - only run once ever.

The Key/Legend for this table's A...R6 values is at the bottom of the page.

Dry Etching Recipes
RIE Etching ICP Etching Oxygen Plasma Systems Other Dry Etchers
Material RIE 2
(MRC) 		RIE 5
(PlasmaTherm) 		DSEIII
(PlasmaTherm) 		Fluorine ICP (PlasmaTherm) ICP Etch 1
(Panasonic E646V) 		ICP Etch 2
(Panasonic E626I) 		Oxford ICP (PlasmaPro 100) Ashers
(Technics PEII) 		Plasma Clean (YES EcoClean) UV Ozone Reactor Plasma Activation
(EVG 810) 		XeF2 Etch
(Xetch) 		Vapor HF Etch
(uETCH) 		CAIBE
(Oxford)
Ag R1
Al R2 R1 R2 R1
Au R3
Cr R2 R1 R1 R1
Cu R1
Ge A R1 R2 R1
Mo R1
Nb A R1
Ni R3
Os A R1
Pt R3
Ru A R3 R1
Si R6 R6 R1 R3 R1
Ta A R1 R1
Ti R1 R1 R1
W R3 R1 R1 R1
TiW R3 R1
Al2O3 A R3 R1
Al2O3 (Sapphire) R1 R1 R1
AlGaAs R3 R1 R3 R1
AlGaN R2 R1
AlN R1
BCB A
CdZnTe R3 R1
GaAs R3 R1 R6 R3 R1
GaN R3 R1 R1 R6 R1
GaSb A R1 R1 R1
HfO2 R1
InGaAlAs R3 R1 R1
InGaAsP R3 R3 R1
InP R3 A R1 R6 R3
ITO R3 R1
LiNbO3 R1
Photoresist & Organics R3 R3 R3 R3 R3 R3 R3 R1
ARC (Anti Reflective Coating) R3
SiC R1 R1 R1
SiN R3 R1 R3 R3 R1
SiO2 R6 R1 R6 R3 R1
SiOxNy A R1 R1
SU8 A
Ta2O5 A R1 R1
TiN R1
TiO2 R1
ZnO2 R1
ZnS R3 R1
ZnSe R2 R1
ZrO2 R1
Material RIE 2
(MRC) 		RIE 5
(PlasmaTherm) 		DSEIII
(PlasmaTherm) 		Fluorine ICP (PlasmaTherm) ICP Etch 1
(Panasonic E626I) 		ICP Etch 2
(Panasonic E640) 		Oxford ICP (PlasmaPro 100) Ashers
(Technics PEII) 		Plasma Clean (YES EcoClean) UV Ozone Reactor Plasma Activation
(EVG 810) 		XeF2 Etch
(Xetch) 		Vapor HF Etch
(uETCH) 		CAIBE
(Oxford)

Process Ranking Table

Processes in the table above are ranked by their "Process Maturity Level" as follows:

Process Level Description of Process Level Ranking
A Process Allowed and materials available but never done
R1 Process has been ran at least once
R2 Process has been ran and procedure is documented
R3 Process has been ran, procedure is documented, and data is available
R4 Process has a documented procedure with regular (≥4x per year) data no in-Situ control available
R5 Process has a documented procedure with regular (≥4x per year) data and in-Situ control available
R6 Process has a documented procedure and control charts/limits available.  Controlled process.
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