ICP Etch 2 (Panasonic E626I)

ICP Etch 2 (Panasonic E626I) Tool Type Dry Etch Location Bay 2 Supervisor Mike Silva Supervisor Phone (805) 893-3096 Supervisor E-Mail silva@ece.ucsb.edu Description ? Manufacturer Panasonic Factory Solutions Dry Etch Recipes Sign up for this tool

About

This is a three-chamber tool for etching of a variety of materials. Chamber one is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This chamber has Cl₂, BCl₃, CF₄, CHF₃, SF₆, Ar, N₂, and O₂ for gas sources and can be used to etch a variety of materials from SiO₂ to metals to compound semiconductors. The chamber evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, allowing for fast pump down. Chamber two is a 2000 W ICP chamber configures for plasma etching of photoresist and other materials such as BCB. The substrate is not biased and the chamber has CF₄ and O₂ for the gases. Chamber three is a DI rinsing chamber for rinsing off any etch byproducts before removing the sample from the system. The system accepts 6” wafers or pieces mounted to the wafers. In Automatic mode, multiple wafers can be run through automatically with the cassette-based system.of low-stress Nitride films.

Detailed Specifications

• 1000 W ICP source, 500 W RF Sample Bias Source in etching chamber
• RT - 80°C sample temperature for etching
• Optimal Emission Monitoring
• Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
• Cl₂, BCl₃, CF₄, CHF₃, SF₆, Ar, N₂, and O₂ in etch chamber
• 2000 W ICP ashing chamber
• RT - 250°C sample temperature for ashing
• Ashing pressures 50 mT - 500 mT
• O₂, N₂, CF₄, H₂O Vapor for ashing chamber
• Multiple 6” diameter wafer capable system
• Pieces possible by mounting to 6” wafer

Documentation

• Operating Instruction Manual

• ICP II Standard recipes
• SiN and SiO2 etch rates
• Particle count