E-Beam 4 (CHA)

E-Beam 4 (CHA) Tool Type Vacuum Deposition Location Bay 3 Supervisor Tony Bosch Supervisor Phone (805) 893-3486 Supervisor E-Mail bosch@ece.ucsb.edu Description Multi-Wafer Evaporator Manufacturer CHA Industries Model SEC-600-RAP Vacuum Deposition Recipes Sign up for this tool

About

This electron-beam evaporation system is the newest of the lab for metal deposition. This system is a bell-jar type system and has the capability to do up to 10-4” wafers in a lift-off configuration and up to 24-4” wafers in a sidewall coverage configuration. Rotational motion in combination with baffling is used for lift-off and provides roughly 5% uniformity across a 4” wafer. The sidewall coverage fixturing uses full planetary motion to provide coverage over all sidewalls. The system also an 8-pocket e-beam source and an Inficon IC/5 deposition controller that allows for programming of fully automated multiple layer depositions. The metals available for deposition are Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, Fe, NiCr, NiFe and Cr. This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1.0 microns.

Detailed Specifications

• Temescal 10kV power supply
• 1-Temescal 8-pocket series 260 e-beam sources
• Cryo-pumped system with ~ 1e-7 ultimate base pressure
• Rotation with baffle for 5% uniformity over 4” wafer
• Automatic vacuum sequencing
• Temescal e-beam sweep control
• Inficon IC/5 programmable crystal thickness monitoring system
• Automatic deposition of multiple layer stacks
• Sample size: Pieces or up to 10-4” wafers for lift-off and 24-4” wafers for sidewall coverage
• Metals: Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, Fe, NiCr, NiFe and Cr

Documentation

• Operating Procedures

Materials Table

Materials Table
Material	Density, g/cm3	Z Ratio	Master tooling, %	Process Gain, A/sec/%pwr	Comments
Ag	10.50	0.529	110	10.0	Tony, could you please check this?
Al	2.70	1.080	165	6.0
Au	19.30	0.381	120	10.0
Co	8.90	0.343	150	5.0	density should be 8.71
Cr	7.20	0.305	140	10.0
Fe	7.86	0.349	165	10.0
Ge	5.35	0.516	126	10.0
Hf	13.09	0.360	150	10.0
Ir	22.40	0.129	130	10.0
Ni	8.91	0.331	150	5.0
NiCr	8.23	0.321	140	10.0	density should be 8.50
NiFe	8.70	1.000	100	10.0
Pd	12.038	0.357	112	10.0
Pt	21.40	0.245	130	10.0
Ru	12.362	0.182	100	10.0	should be 12.45
Ti	4.50	0.628	183	10.0
Zr	6.49	0.600	150	10.0	should 6.51