PECVD Recipes: Difference between revisions

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*[[Media:PECVD2-SiN-Recipe-Medium stres SiNx-100% SiH4-120W-100C.pdf|SiN Deposition Recipe (120W 100° Medium Stress)]]
*[[Media:PECVD2-SiN-Recipe-Medium stres SiNx-100% SiH4-120W-100C.pdf|SiN Deposition Recipe (120W 100° Medium Stress)]]
*[[Media:PECVD2-SiN-Table-Low stres SiNx-100% SiH4-120W-100C.pdf|SiN Table - comparison]]
*[[Media:PECVD2-SiN-Table-Low stres SiNx-100% SiH4-120W-100C.pdf|SiN Table - comparison]]
*[[Media:PECVD2-SiN-SEM- Medium stres SiNx-100% SiH4-120W-100C.pdf|SiN SEM wall coverage]]
*[[Media:PECVD2-SiN-SEM- Medium stres SiNx-100% SiH4-120W-100C.pdf|SiN SEM sidewall coverage]]
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*[[Media:PECVD2-SiN-Recipe-Medium stress SiNx-100% SiH4-120W-250C.pdf|SiN Deposition Recipe (120W 250° Medium Stress)]]
*[[Media:PECVD2-SiN-Recipe-Medium stress SiNx-100% SiH4-120W-250C.pdf|SiN Deposition Recipe (120W 250° Medium Stress)]]

Revision as of 20:27, 3 October 2012

Back to Vacuum Deposition Recipes.

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

SiO2 deposition (PECVD #1)

PECVD 2 (Advanced Vacuum)

SiN deposition (PECVD #2)

SiO2 deposition (PECVD #2)

ICP-PECVD (Unaxis VLR)

SiN deposition (Unaxis VLR)

SiN (2% SiH4)

50° 100° 250°

SiN (2% SiH4 - No-Ar)

50° 100° 250°

SiN (2% SiH4 - No-Ar - Extra N2)

50° 100° 250°

SiN (100% SiH4 )

50° 100° 250°

SiO2 deposition (Unaxis VLR)

SiO2 (2% SiH4)

50° 100° 250°

SiO2 (2% SiH4 - No Ar)

50° 100° 250°

SiO2 (100% SiH4 HDR)

50° 100° 250°

SiO2 (100% SiH4 LDR)

50° 100° 250°