Contact Alignment Recipes: Difference between revisions

From UCSB Nanofab Wiki
Jump to navigation Jump to search
No edit summary
Line 1: Line 1:
{{recipes|Lithography}}
{{recipes|Lithography}}

=Notes=
= Notes =
⚫
Below is a listing of contact lithography recipes for use with designated aligners. Based on your sample reflectivity, absorption, and surface topography the exposure time parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For best resolution using thin resists, you will need to remove any edge bead before contact and exposure. Also, hard contact mode will give you the most intimate contact between sample and mask, giving the best resolution. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Unless otherwise noted, all exposures are done on silicon wafers.

⚫
Below is a listing of contact lithography recipes for use with designated aligners. Based on your sample reflectivity, absorption, and surface topography the exposure time parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For best resolution using thin resists, you will need to remove any edge bead before contact and exposure. Also, hard contact mode will give you the most intimate contact between sample and mask, giving the best resolution. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Unless otherwise noted, all exposures are done on silicon wafers.

⚫
= [[Suss Aligners (SUSS MJB-3)]] =

⚫
==Positive Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector.


⚫
=[[Suss Aligners (SUSS MJB-3)]]=
==Positive Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed-->
⚫
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector.
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"
|-bgcolor="#D0E7FF"
|- bgcolor="#D0E7FF"
!width=100|Resist
! width="100" | Resist
!width=100|Spin Cond.
! width="100" | Spin Cond.
!width=100|Bake
! width="100" | Bake
!width=100|Thickness
! width="100" | Thickness
!width=125|Exposure Time
! width="125" | Exposure Time
!width=100|Developer
! width="100" | Developer
!width=125|Developer Time
! width="125" | Developer Time
!width=300|Comments
! width="300" | Comments
|-
|-
|AZ4110
| AZ4110
|4 krpm/30”
| 4 krpm/30”
|95°C/60”
| 95°C/60”
|~ 1.1 um
| ~ 1.1 um
|8”
| 8”
|AZ400K:DI 1:4
| AZ400K:DI 1:4
|50"
| 50"
|align="left"|
| align="left" |
|-
|-
|AZ4210
| AZ4210
|4 krpm/30”
| 4 krpm/30”
|95°C/60”
| 95°C/60”
|~ 2.1 um
| ~ 2.1 um
|13”
| 13”
|AZ400K:DI 1:4
| AZ400K:DI 1:4
|70”
| 70”
|align="left"|
| align="left" |
|-
|-
|AZ4330
| AZ4330
|4 krpm/30”
| 4 krpm/30”
|95°C/60”
| 95°C/60”
|~ 3.3 um
| ~ 3.3 um
|18”
| 18”
|AZ400K:DI 1:4
| AZ400K:DI 1:4
|90”
| 90”
|align="left"|
| align="left" |
|-
|-
|SPR220-3.0
| SPR220-3.0
|3.5 krpm/30”
| 3.5 krpm/30”
|115°C/90”
| 115°C/90”
|~ 2.5 um
| ~ 2.5 um
|25”
| 25”
|AZ300MIF
| AZ300MIF
|50”
| 50”
|align="left"|
| align="left" |
*Post Bake 115°C /60”
*Post Bake 115°C /60”
*Better Cl2 etch resistance than 4330
*Better Cl2 etch resistance than 4330
*{{fl|SPR220-3contactrecipe.pdf|More Information}}
*{{fl|SPR220-3contactrecipe.pdf|More Information}}

|-
|-
|SPR220-7.0
| SPR220-7.0
|3.5 krpm/45”
| 3.5 krpm/45”
|115°C/120”
| 115°C/120”
|~ 7.5 um
| ~ 7.5 um
|60”
| 60”
|AZ300MIF
| AZ300MIF
|70”
| 70”
|align="left"|
| align="left" |
*{{fl|SPR220-7contactrecipe.pdf|More Information}}
*{{fl|SPR220-7contactrecipe.pdf|More Information}}

|}
|}


⚫
==Negative Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.
==Negative Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed-->

⚫
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"
|-bgcolor="#D0E7FF"
|- bgcolor="#D0E7FF"
!width=100|Resist
! width="100" | Resist
!width=100|Spin Cond.
! width="100" | Spin Cond.
!width=100|Bake
! width="100" | Bake
!width=100|Thickness
! width="100" | Thickness
!width=125|Exposure Time
! width="125" | Exposure Time
!width=100|PEB
! width="100" | PEB
!width=100|Flood
! width="100" | Flood
!width=125|Developer
! width="125" | Developer
!width=125|Developer Time
! width="125" | Developer Time
!width=350|Comments
! width="350" | Comments
|-
|-
|AZ5214
| AZ5214
|6 krpm/30”
| 6 krpm/30”
|95°C/60”
| 95°C/60”
|~ 1 um
| ~ 1 um
|5”
| 5”
|110°C/60”
| 110°C/60”
|60”
| 60”
|AZ400K:DI 1:5.5 <br>or<br>AZ300MIF
| AZ400K:DI 1:5.5 <br>or<br>AZ300MIF
|60"<br><br>45"
| 60"<br><br>45"
|align="left"|
| align="left" |
*Concentrated 400K Dev. Etches 5214
*Concentrated 400K Dev. Etches 5214

|-
|-
|AZ5214
| AZ5214
|6 krpm/30”
| 6 krpm/30”
|95°C/60”
| 95°C/60”
|~ 1 um
| ~ 1 um
|10”
| 10”
|110°C/60”
| 110°C/60”
|60”
| 60”
|AZ300MIF
| AZ300MIF
|45”
| 45”
|align="left"|
| align="left" |
*Using i-line filter in MJB-3. 0.7 um resolution possible
*Using i-line filter in MJB-3. 0.7 um resolution possible

|-
|-
|AZnLOF2020
| AZnLOF2020
|3 krpm/30”
| 3 krpm/30”
|110°C/90”
| 110°C/90”
|~ 2.1 um
| ~ 2.1 um
|10”
| 10”
|110°C/60”
| 110°C/60”
|
|
|AZ300MIF
| AZ300MIF
|60”
| 60”
|align="left"|
| align="left" |
*Use i-line filter
*Use i-line filter
*For Undercut
*For Undercut
*{{fl|AZnLOF2020contactrecipe.pdf|More Information}}
*{{fl|AZnLOF2020contactrecipe.pdf|More Information}}

|}
|}


=[[Contact Aligner (SUSS MA-6)]]=
= [[Contact Aligner (SUSS MA-6)]] =

==Positive Resist (MA-6)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed-->
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except reduced by a factor of 2.4.
==Positive Resist (MA-6)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except reduced by a factor of 2.4.

{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"
|-bgcolor="#D0E7FF"
|- bgcolor="#D0E7FF"
!width=100|Resist
! width="100" | Resist
!width=100|Spin Cond.
! width="100" | Spin Cond.
!width=100|Bake
! width="100" | Bake
!width=100|Thickness
! width="100" | Thickness
!width=125|Exposure Time
! width="125" | Exposure Time
!width=100|Developer
! width="100" | Developer
!width=125|Developer Time
! width="125" | Developer Time
!width=300|Comments
! width="300" | Comments
|-
|-
|AZ4110
| AZ4110
|4 krpm/30”
| 4 krpm/30”
|95°C/60”
| 95°C/60”
|~ 1.1 um
| ~ 1.1 um
|3.3”
| 3.3”
|AZ400K:DI 1:4
| AZ400K:DI 1:4
|50"
| 50"
|align="left"|
| align="left" |
|-
|-
|AZ4210
| AZ4210
|4 krpm/30”
| 4 krpm/30”
|95°C/60”
| 95°C/60”
|~ 2.1 um
| ~ 2.1 um
|5.4”
| 5.4”
|AZ400K:DI 1:4
| AZ400K:DI 1:4
|70”
| 70”
|align="left"|
| align="left" |
|-
|-
|AZ4330
| AZ4330
|4 krpm/30”
| 4 krpm/30”
|95°C/60”
| 95°C/60”
|~ 3.3 um
| ~ 3.3 um
|7.5”
| 7.5”
|AZ400K:DI 1:4
| AZ400K:DI 1:4
|90”
| 90”
|align="left"|
| align="left" |
|-
|-
|SPR220-3.0
| SPR220-3.0
|3.5 krpm/30”
| 3.5 krpm/30”
|115°C/90”
| 115°C/90”
|~ 2.5 um
| ~ 2.5 um
|10.4”
| 10.4”
|AZ300MIF
| AZ300MIF
|50”
| 50”
|align="left"|
| align="left" |
*Post Bake 115°C /60”
*Post Bake 115°C /60”
*Better Cl2 etch resistance than 4330
*Better Cl2 etch resistance than 4330

|-
|-
|SPR220-7.0
| SPR220-7.0
|3.5 krpm/45”
| 3.5 krpm/45”
|115°C/120”
| 115°C/120”
|~ 7.5 um
| ~ 7.5 um
|25”
| 25”
|AZ300MIF
| AZ300MIF
|70”
| 70”
|align="left"|
| align="left" |
⚫
|-
|}
|}


⚫
==Negative Resist (MA-6)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except reduced by a factor of 2.4.
==Negative Resist (MA-6)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed-->

⚫
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except reduced by a factor of 2.4.
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"
|-bgcolor="#D0E7FF"
|- bgcolor="#D0E7FF"
!width=100|Resist
! width="100" | Resist
!width=100|Spin Cond.
! width="100" | Spin Cond.
!width=100|Bake
! width="100" | Bake
!width=100|Thickness
! width="100" | Thickness
!width=125|Exposure Time
! width="125" | Exposure Time
!width=100|PEB
! width="100" | PEB
!width=100|Flood
! width="100" | Flood
!width=125|Developer
! width="125" | Developer
!width=125|Developer Time
! width="125" | Developer Time
!width=350|Comments
! width="350" | Comments
|-
|-
|AZ5214
| AZ5214
|6 krpm/30”
| 6 krpm/30”
|95°C/60”
| 95°C/60”
|~ 1 um
| ~ 1 um
|2.1”
| 2.1”
|110°C/60”
| 110°C/60”
|60”
| 60”
|AZ400K:DI 1:5.5 <br>or<br>AZ300MIF
| AZ400K:DI 1:5.5 <br>or<br>AZ300MIF
|60"<br><br>45"
| 60"<br><br>45"
|align="left"|
| align="left" |
*Concentrated 400K Dev. Etches 5214
*Concentrated 400K Dev. Etches 5214

|-
|-
|AZ5214
| AZ5214
|6 krpm/30”
| 6 krpm/30”
|95°C/60”
| 95°C/60”
|~ 1 um
| ~ 1 um
|4.2”
| 4.2”
|110°C/60”
| 110°C/60”
|60”
| 60”
|AZ300MIF
| AZ300MIF
|45”
| 45”
|align="left"|
| align="left" |
*Using i-line filter in MJB-3. 0.7 um resolution possible
*Using i-line filter in MJB-3. 0.7 um resolution possible

⚫
|-
⚫
| AZnLOF2020
| 3 krpm/30”
| 110°C/90”
| ~ 2.1 um
| 4.2”
| 110°C/60”
|
| AZ300MIF
| 60”
| align="left" |
*Use i-line filter
*For Undercut

|-
|-
| AZnLOF2035
⚫
|AZnLOF2020
|3 krpm/30”
| 3 krpm/30”
|110°C/90”
| 110°C/90”
|~ 2.1 um
| ~ 2.1 um
|4.2”
| 4.2”
|110°C/60”
| 110°C/60”
|
|
|AZ300MIF
| AZ300MIF
|60”
| 60”
|align="left"|
| align="left" |
*Use i-line filter
*Use i-line filter
*For Undercut
*For Undercut
|}
|}

Revision as of 22:50, 22 April 2013

Back to Lithography Recipes.

Notes

Below is a listing of contact lithography recipes for use with designated aligners. Based on your sample reflectivity, absorption, and surface topography the exposure time parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For best resolution using thin resists, you will need to remove any edge bead before contact and exposure. Also, hard contact mode will give you the most intimate contact between sample and mask, giving the best resolution. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Unless otherwise noted, all exposures are done on silicon wafers.

Suss Aligners (SUSS MJB-3)

==Positive Resist (MJB-3)== Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector.

Resist Spin Cond. Bake Thickness Exposure Time Developer Developer Time Comments
AZ4110 4 krpm/30” 95°C/60” ~ 1.1 um 8” AZ400K:DI 1:4 50"
AZ4210 4 krpm/30” 95°C/60” ~ 2.1 um 13” AZ400K:DI 1:4 70”
AZ4330 4 krpm/30” 95°C/60” ~ 3.3 um 18” AZ400K:DI 1:4 90”
SPR220-3.0 3.5 krpm/30” 115°C/90” ~ 2.5 um 25” AZ300MIF 50”
SPR220-7.0 3.5 krpm/45” 115°C/120” ~ 7.5 um 60” AZ300MIF 70”

==Negative Resist (MJB-3)== Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.

Resist Spin Cond. Bake Thickness Exposure Time PEB Flood Developer Developer Time Comments
AZ5214 6 krpm/30” 95°C/60” ~ 1 um 5” 110°C/60” 60” AZ400K:DI 1:5.5
or
AZ300MIF 		60"

45"
  • Concentrated 400K Dev. Etches 5214
AZ5214 6 krpm/30” 95°C/60” ~ 1 um 10” 110°C/60” 60” AZ300MIF 45”
  • Using i-line filter in MJB-3. 0.7 um resolution possible
AZnLOF2020 3 krpm/30” 110°C/90” ~ 2.1 um 10” 110°C/60” AZ300MIF 60”

Contact Aligner (SUSS MA-6)

==Positive Resist (MA-6)== Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except reduced by a factor of 2.4.

Resist Spin Cond. Bake Thickness Exposure Time Developer Developer Time Comments
AZ4110 4 krpm/30” 95°C/60” ~ 1.1 um 3.3” AZ400K:DI 1:4 50"
AZ4210 4 krpm/30” 95°C/60” ~ 2.1 um 5.4” AZ400K:DI 1:4 70”
AZ4330 4 krpm/30” 95°C/60” ~ 3.3 um 7.5” AZ400K:DI 1:4 90”
SPR220-3.0 3.5 krpm/30” 115°C/90” ~ 2.5 um 10.4” AZ300MIF 50”
  • Post Bake 115°C /60”
  • Better Cl2 etch resistance than 4330
SPR220-7.0 3.5 krpm/45” 115°C/120” ~ 7.5 um 25” AZ300MIF 70”

==Negative Resist (MA-6)== Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except reduced by a factor of 2.4.

Resist Spin Cond. Bake Thickness Exposure Time PEB Flood Developer Developer Time Comments
AZ5214 6 krpm/30” 95°C/60” ~ 1 um 2.1” 110°C/60” 60” AZ400K:DI 1:5.5
or
AZ300MIF 		60"

45"
  • Concentrated 400K Dev. Etches 5214
AZ5214 6 krpm/30” 95°C/60” ~ 1 um 4.2” 110°C/60” 60” AZ300MIF 45”
  • Using i-line filter in MJB-3. 0.7 um resolution possible
AZnLOF2020 3 krpm/30” 110°C/90” ~ 2.1 um 4.2” 110°C/60” AZ300MIF 60”
  • Use i-line filter
  • For Undercut
AZnLOF2035 3 krpm/30” 110°C/90” ~ 2.1 um 4.2” 110°C/60” AZ300MIF 60”
  • Use i-line filter
  • For Undercut
Retrieved from "https://wiki.nanofab.ucsb.edu/w/index.php?title=Contact_Alignment_Recipes&oldid=2740"