Lithography Recipes: Difference between revisions

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! bgcolor="#D0E7FF" align="center" colspan="2" | '''[[Contact Alignment Recipes|Contact Aligners]]'''
! bgcolor="#D0E7FF" align="center" colspan="2" | '''[[Contact Alignment Recipes|Contact Aligners]]'''
! bgcolor="#D0E7FF" align="center" colspan="3" | '''[[Stepper Recipes|Steppers]]'''
! bgcolor="#D0E7FF" align="center" colspan="3" | '''[[Stepper Recipes|Steppers]]'''

! width="30" bgcolor="#D0E7FF" align="center" | '''[[Flood Exposure Recipes|Flood Expose]]'''
! bgcolor="#D0E7FF" align="center" colspan="2" | '''[[E-Beam Lithography Recipes|E-Beam Lithography]]'''
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{{LithRecipe Table}}

Revision as of 23:40, 16 July 2013

General Information

This page contains information and links to recipes/datasheets spin-coated materials used in the facility. In general, the following information is provided for the following materials:

  • Photoresists: Links to nominal recipes to provide the user with starting points are found in the Photo Lithography Recipe section. Substrate, surface materials, pattern size can often affect process parameters. Datasheets provided for reference.
  • E-beam Lithography Resists: Links to nominal recipes may be provided in the E-Beam Lithography Recipe Section. Substrates and patterns play a large role in process parameters. Datasheets provided for reference.
  • Underlayers: These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist. Datasheets are provided and some recipes are found in the Lift-Off Techniques section.
  • Nanoimprinting Resists: Datasheets are provided. Any recipes provided are for use in the Nanonex NX2000 system only and are found in the Nanoimprint section.
  • Anti-Reflection Coatings: These are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes. Recipes using these materials are found within the photoresist recipes themselves. Datasheets are provided for reference on use of the materials.
  • Contrast Enhancement Materials (CEM): Used for resolution enhancement. Not for use in contact aligners. Recipes using these materials are found within the photoresist recipes themselves. Datasheets also provided.
  • Adhesion Promoters: Datasheets are provided on use of these materials.
  • Low-K Spin-on Dielectrics: Datasheets are provided for BCB, Phoot-BCB, and SOG for reference on use. Some recipes are provided in the Low-K section.
  • Developers and Removers: Datasheets provided for reference.

Lift-Off Techniques

Chemical Datasheets

Positive Photoresists
Negative Photoresists
Underlayers
E-beam resists
Nanoimprinting
Contrast Enhancement Materials
Anti-Reflection Coatings
Adhesion Promoters
BCB and SOG
Developers
Photoresist Removers

Photolithography Recipes

  • R = Recipe is available. Clicking this link will take you to the recipe.
  • A = Material is available for use, but no recipes are provided.


Photolithography Recipes

 Contact Aligners Steppers
Positive Resists SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300) 		Stepper 2
(AutoStep 200) 		Stepper 3
(ASML DUV) 		MLA150
(Heidelberg)


AZ4110 R1 R1 A A
AZ4210 R1 R1 A A
AZ4330RS R1 R1 A A
OCG 825-35CS A A A A
SPR 950-0.8 A A A A
SPR 955 CM-0.9 A A R1 R1
SPR 955 CM-1.8 A A R1 R1
SPR 220-3.0 R1 R1 R1 R1
SPR 220-7.0 R1 R1 R1 R1
THMR-IP3600 HP D

A A
UV6-0.7 R1
UV210-0.3 R1
Negative Resists SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300) 		Stepper 2
(AutoStep 200) 		Stepper 3
(ASML DUV) 		MLA150
(Heidelberg)


AZ5214-EIR R1 R1 R1 R1
AZnLOF 2020 R1 R1 R1 R1
AZnLOF 2035 A A A A
AZnLOF 2070 A A A A
AZnLOF 5510 A A R1 R1
UVN2300-0.5 R1
SU-8 2015 A A A A
SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300) 		Stepper 2
(AutoStep 200) 		Stepper 3
(ASML DUV) 		MLA150
(Heidelberg)


E-Beam Lithography Recipes

  • R = Recipe is available. Clicking this link will take you to the recipe.
  • A = Material is available for use, but no recipes are provided.


E-Beam Lithography Recipes

 Contact Aligners Steppers Flood Expose E-Beam Lithography
Positive Resists SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300) 		Stepper 2
(AutoStep 200) 		Stepper 3
(ASML DUV) 		MLA150
(Heidelberg)


AZ4110 R1 R1 A A
AZ4210 R1 R1 A A



AZ4330RS R1 R1 A A
OCG 825-35CS A A A A



SPR 950-0.8 A A A A
SPR 955 CM-0.9 A A R1 R1



SPR 955 CM-1.8 A A R1 R1
SPR 220-3.0 R1 R1 R1 R1



SPR 220-7.0 R1 R1 R1 R1
THMR-IP3600 HP D

A A



UV6-0.7 R1
UV210-0.3 R1
Negative Resists SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300) 		Stepper 2
(AutoStep 200) 		Stepper 3
(ASML DUV) 		MLA150
(Heidelberg)


AZ5214-EIR R1 R1 R1 R1
AZnLOF 2020 R1 R1 R1 R1
AZnLOF 2035 A A A A
AZnLOF 2070 A A A A
AZnLOF 5510 A A R1 R1
UVN2300-0.5 R1
SU-8 2015 A A A A
Underlayers SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300) 		Stepper 2
(AutoStep 200) 		Stepper 3
(ASML DUV) 		MLA150
(Heidelberg)


PMGI SF-11







PMGI SF-15
LOL 2000
XHRIC-11 (i-lineBARC)
AR-2 (DUV BARC)
DS-K101 (DUV BARC)
Overlayers SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300) 		Stepper 2
(AutoStep 200) 		Stepper 3
(ASML DUV) 		MLA150
(Heidelberg)


CEM-365 IS
E-Beam Resists SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300) 		Stepper 2
(AutoStep 200) 		Stepper 3
(ASML DUV) 		MLA150
(Heidelberg)


 ??????
 ???????
Nanoimprint Resists SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300) 		Stepper 2
(AutoStep 200) 		Stepper 3
(ASML DUV) 		MLA150
(Heidelberg)


MR-I 7020
Nanonex NX-1020
SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300) 		Stepper 2
(AutoStep 200) 		Stepper 3
(ASML DUV) 		MLA150
(Heidelberg)


Retrieved from "https://wiki.nanofab.ucsb.edu/w/index.php?title=Lithography_Recipes&oldid=2847"