Atomic Layer Deposition (Oxford FlexAL)

Atomic Layer Deposition (Oxford FlexAL) Tool Type Vacuum Deposition Location Bay 2 Supervisor Brian Lingg Supervisor Phone (805) 893-8145 Supervisor E-Mail lingg_b@ucsb.edu Description Oxford FlexAL Atomic Layer Deposition Manufacturer Oxford Instruments Plasma Technologies Vacuum Deposition Recipes Sign up for this tool

About

The Oxford Instruments FlexAL Atomic Layer Deposition system at UCSB is a plasma-enhanced ALD system for the precise growth of ultra-thin oxides and nitrides. Self-limiting layer by layer growth ensures precise control, film conformality, and repeatability of the films. The system currently has metallorganic precursors for Aluminum, Hafnium, Zirconium, and Silicon oxides and nitrides. Water is available for thermal oxides and Oxygen, Nitrogen, and Hydrogen are available for plasma assisted oxides and nitrides. Remote ICP plasma powers up to 600W are possible. The system is load-locked and can accommodate sample temperatures up to 550°C. Processing temperature windows are defined for each material based on growth limitations. The system is step-by-step programmable through a flexible GUI interface. In-situ ellipsometry between growth cycles and mass spectrometry during growth are both available.

Documentation

• Operating Instructions

Etch Rates of ALD Films

• Al2O3 Plasma 300C Wet Etch Rates