PECVD1 Recipes: Difference between revisions
Jump to navigation
Jump to search
| Line 17: | Line 17: | ||
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEw0bjFEdTF2SUhRa25Ca0d0SzBha3c&usp=drive_web#gid=sharing SiO<sub>2</sub> Data April 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEw0bjFEdTF2SUhRa25Ca0d0SzBha3c&usp=drive_web#gid=sharing SiO<sub>2</sub> Data April 2014] |
||
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>2</sub> 1000A Thickness uniformity 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>2</sub> 1000A Thickness uniformity 2014] |
||
*Deposition rate~35.73nm/min |
|||
*HF e.r.~610nm/min |
|||
*Stress~-402MPa |
|||
*Refractive Index~1.460 |
|||
== SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1) == |
== SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1) == |
||
Revision as of 01:51, 22 May 2014
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
- SiN Standard Recipe
- SiN Data April 2014
- SiN 1000A Thickness uniformity 2014
- Low Stress Si3N4 - Variable Stress Recipes
- Low Stress Si3N4 - Variable Stress Plot
- Deposition rate~11.21nm/min
- HF e.r.~87nm/min
- Stress~476MPa
- Refractive Index~1.936
SiO2 deposition (PECVD #1)
- Deposition rate~35.73nm/min
- HF e.r.~610nm/min
- Stress~-402MPa
- Refractive Index~1.460