PECVD1 Recipes: Difference between revisions
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* [[media:PECVD1-SiON-Recipe.pdf|Low Stress Si<sub>3</sub>N<sub>4</sub> - Variable Stress Plot]] |
* [[media:PECVD1-SiON-Recipe.pdf|Low Stress Si<sub>3</sub>N<sub>4</sub> - Variable Stress Plot]] |
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*Deposition rate~11. |
*Deposition rate~11.30nm/min (users must calibrate this prior to critical deps) |
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*HF e.r.~ |
*HF e.r.~89nm/min |
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*Stress~ |
*Stress~466MPa |
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*Refractive Index~1. |
*Refractive Index~1.937 |
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== SiO<sub>2</sub> deposition (PECVD #1) == |
== SiO<sub>2</sub> deposition (PECVD #1) == |
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Revision as of 22:54, 1 August 2014
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
- SiN Standard Recipe
- SiN Data July 2014
- SiN 1000A Thickness uniformity 2014
- Low Stress Si3N4 - Variable Stress Recipes
- Low Stress Si3N4 - Variable Stress Plot
- Deposition rate~11.30nm/min (users must calibrate this prior to critical deps)
- HF e.r.~89nm/min
- Stress~466MPa
- Refractive Index~1.937
SiO2 deposition (PECVD #1)
- Deposition rate~35.73nm/min (users must calibrate this prior to critical deps)
- HF e.r.~610nm/min
- Stress~-402MPa
- Refractive Index~1.460