Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer): Difference between revisions
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Line 15:
|0.74
|77.9
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/f1/SiO2_Etch_using_ICP2_with_O2.pdf]
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|1/28/2019
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|0.77
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|3/6/2019
|I21903
|88.5
|0.80
|79.4
|[https://wiki.nanotech.ucsb.edu/wiki/images/d/dc/SiO2_Etch_using_ICP2_with_O2-3-06-2019.pdf]
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|7/12/2019
|I21906
|91.9
|0.69
|78.1
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/04/I2190605.pdf]
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