UV Ozone Reactor: Difference between revisions

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(Created page with "{{tool|{{PAGENAME}} |picture=Ozone.jpg |type = Dry Etch |super= Tony Bosch |location=Bay 5 |description = ? |manufacturer = ? }} = About =")
 
(→‎About: adding data for UV ozone 20min on Si quarter that was previously BHF etched [no native oxide].)
 
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{{tool|{{PAGENAME}}
{{tool2|{{PAGENAME}}
|picture=Ozone.jpg
|picture=Ozone.jpg
|type = Dry Etch
|type = Dry Etch
|super= Tony Bosch
|super= Lee Sawyer
|super2= Tony Bosch
|model=144AX
|location=Bay 5
|location=Bay 5
|description = ?
|description = UV Ozone Cleaner
|manufacturer = ?
|manufacturer = Jelight
}}
}}
= About =
==About==
UV+O (atomic oxygen) cleaning method is a photosensitized oxidation process in which the contaminant molecules of photo-resists, resins, human skin oils, cleaning solvent residues, silicone oils, and flux are excited and/or dissociated by the absorption of short-wavelength UV radiation. Near atomically clean surfaces can be achieved in less than one minute. In addition, this process does not damage any sensitive device structures of MOS gate oxide. The system can be used for oxygen activation, etching or oxidation of a surface without ion bombardment.

==Documentation==

*[https://wiki.nanofab.ucsb.edu/w/images/3/3e/UV_Ozone_SOP_Rev_A.pdf UV Ozone Reactor SOP]
*[//wiki.nanotech.ucsb.edu/wiki/images/7/79/UV_Ozone_Manual_Jelight_M-144AX.pdf UV Ozone Manual]
*Data [Si quarter, 20min UV Ozone ~1nm thick oxide]

Latest revision as of 18:16, 23 April 2025

UV Ozone Reactor
Ozone.jpg
Location Bay 5
Tool Type Dry Etch
Manufacturer Jelight
Model 144AX
Description UV Ozone Cleaner

Primary Supervisor Lee Sawyer
(805) 893-2123
lee_sawyer@ucsb.edu

Secondary Supervisor

Tony Bosch


Recipes Dry Etch Recipes


About

UV+O (atomic oxygen) cleaning method is a photosensitized oxidation process in which the contaminant molecules of photo-resists, resins, human skin oils, cleaning solvent residues, silicone oils, and flux are excited and/or dissociated by the absorption of short-wavelength UV radiation. Near atomically clean surfaces can be achieved in less than one minute. In addition, this process does not damage any sensitive device structures of MOS gate oxide. The system can be used for oxygen activation, etching or oxidation of a surface without ion bombardment.

Documentation