Wafer Coating Process Traveler: Difference between revisions

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There are three standard recipes : STD SiO2, STD Nitride2, and STD LS Nitride2 at 300C. Instructions bellow explain how to run each of the recipes ( seasoning, deposition, cleaning)
=== Unaxis deposition - 300nm SiO2 LDR film @250°C ===


=== a) Prepare three 4” wafers: ===
=== Standard Oxide Deposition ===


==== STD SiO v2 ====
=== for seasoning (regular Si wafer ~500nm thick) ===
#Log in to Advanced PECVD #2
#Seasoning
#*Load the seasoning recipe (STD SiO v2). Edit deposition time to 10min and run it. The goal of this step is to coat oxide on chamber walls and prepare it for deposition.
#Deposition
#*Vent the chamber and load the substrate (place it in the center of platen). You can place glass slides around the wafer to protect it from moving.
#*Pump down.
#*Load the deposition recipe (STD SiO v2). Edit deposition time to desired time and run it. Deposition time is variable. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#PECVD_2_.28Advanced_Vacuum.29 historical data].
#*Unload the wafer.
#Cleaning
#*Wet clean: Wipe sidewall first with DI water, followed by IPA (Do wet clean only if [coat+deposition] time was >29min]).
#*Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning [one minute clean for one minute [coat+deposition] time.
#*Log out
=== Standard Nitride Deposition ===


==== "STD Si3N4 v3" ====
=== for deposition (your wafer for deposition) ===
#Log in to Advanced PECVD #2
#Seasoning
#*Load the seasoning recipe (STD Si3N4 v3). Edit deposition time to 10min and run it. The goal of this step is to coat oxide on chamber walls and prepare it for deposition.
#Deposition
#*Vent the chamber and load the substrate (place it in the center of platen). You can place glass slides around the wafer to protect it from moving.
#*Pump down.
#*Load the deposition recipe (STD Si3N4 v3). Edit deposition time to desired time and run it. Deposition time is variable. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#PECVD_2_.28Advanced_Vacuum.29 historical data].
#*Unload the wafer.
#Cleaning
#*Wet clean: Wipe sidewall first with DI water, followed by IPA (Do wet clean only if [coat+deposition] time was >29min]).
#*Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning [(coat time+deposition time)/7].
#*Log out


=== Standard Low Stress Nitride Deposition ===
=== for cleaning ( Si thick wafer~0.8-1um) ===


==== "STD LS-Si3N4 v4" ====
=== '''b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.''' ===
#Log in to Advanced PECVD #2
c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.
#Seasoning

#*Load the seasoning recipe (STD LS-Si3N4 v4). Edit deposition time to 10min and run it. The goal of this step is to coat oxide on chamber walls and prepare it for deposition.
Seasoning recipe name: SiO2 seasoning, t=2min
#Deposition
Deposition recipe name: SiO2 LDR 250°C, t=780 sec
#*Vent the chamber and load the substrate (place it in the center of platen). You can place small glass slides round the wafer to protect it from moving.
Cleaning recipe name: Post dep PD, t=900sec
#*Pump down.
There is only one SiO2 seasoning recipe. This same recipe is used for seasoning for both LDR and HDR depositions. The goal in this step is to prepare the chamber and deposit ~200nm of SiO2 on walls.
#*Load the deposition recipe (STD LS-Si3N4 v4). Edit deposition time to desired time and run it. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#PECVD_2_.28Advanced_Vacuum.29 historical data].

#*Make sure Loop is set correctly for HF/LF Process Step
d) Run the job (name the job/select the wafer, execute the job)
#*Unload the wafer.

#Cleaning
After loading the wafers and selecting for each wafer correct recipe, you could leave and come back when all runs are finished. You should monitor process at the very beginning to make sure there are no any issues with the run.
#*Wet clean: Wipe sidewall first with DI water, followed by IPA (Do wet clean only if [coat+deposition] time was >29min]).

#*Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning [(coat time+deposition time)/7].
e) Unload wafers ONLY when all runs are finished.
#*Log out

Unaxis deposition - 300nm SiO2 HDR film @250°C
a) Prepare three 4” wafers:

for seasoning (regular Si wafer ~500nm thick)
for deposition (your wafer for deposition)
for cleaning ( Si thick wafer~0.8-1um )
b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.

c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.

Seasoning recipe name: SiO2 seasoning, t=2min
Deposition recipe name: SiO2 HDR 250°C, t=180 sec
Cleaning recipe name: Post dep PD, t=900sec
There is only one SiO2 seasoning recipe. This same recipe is used for seasoning for both LDR and HDR depositions. The goal in this step is to prepare the chamber and deposit ~200nm of SiO2 on walls.

d) Run the job (name the job/select the wafer, execute the job)

After loading the wafers and selecting for each wafer correct recipe, you could leave and come back when all runs are finished. You should monitor process at the very beginning to make sure there are no any issues with the run.

e) Unload wafers ONLY when all runs are finished.

Unaxis deposition - 300nm SiN film @250°C
a) Prepare three 4” wafers:

for seasoning (regular Si wafer ~500nm thick)
for deposition (your wafer for deposition)
for cleaning ( Si thick wafer~0.8-1um)
b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.

c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.

Seasoning recipe name: SiN seasoning, t=5min
Deposition recipe name: SiN 250°C, t=480 sec
Cleaning recipe name: Post dep PD, t=1500sec
d) Run the job (name the job/select the wafer, execute the job)

After loading the wafers and selecting for each wafer correct recipe, you could leave and come back when all runs are finished. You should monitor process at the very beginning to make sure there are no any issues with the run.

e) Unload wafers ONLY when all runs are finished.

Unaxis deposition - 300nm SiN LS film @250°C
a) Prepare three 4”wafers:

for seasoning (regular Si wafer ~500nm thick)
for deposition (your wafer for deposition)
for cleaning ( Si thick wafer~0.8-1um )
b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.

c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.

Seasoning recipe name: SiN seasoning, t=2min
Deposition recipe name: SiN LS 250°C, t=180 sec
Cleaning recipe name: Post dep PD, t=1500sec
d) Run the job (name the job/select the wafer, execute the job)

After loading the wafers and selecting for each wafer correct recipe, you could leave and come back when all runs are finished. You should monitor process at the very beginning to make sure there are no any issues with the run.

e) Unload wafers ONLY when all runs are finished.

Latest revision as of 23:12, 19 February 2025

There are three standard recipes : STD SiO2, STD Nitride2, and STD LS Nitride2 at 300C. Instructions bellow explain how to run each of the recipes ( seasoning, deposition, cleaning)

Standard Oxide Deposition

STD SiO v2

  1. Log in to Advanced PECVD #2
  2. Seasoning
    • Load the seasoning recipe (STD SiO v2). Edit deposition time to 10min and run it. The goal of this step is to coat oxide on chamber walls and prepare it for deposition.
  3. Deposition
    • Vent the chamber and load the substrate (place it in the center of platen). You can place glass slides around the wafer to protect it from moving.
    • Pump down.
    • Load the deposition recipe (STD SiO v2). Edit deposition time to desired time and run it. Deposition time is variable. Get the rate from historical data.
    • Unload the wafer.
  4. Cleaning
    • Wet clean: Wipe sidewall first with DI water, followed by IPA (Do wet clean only if [coat+deposition] time was >29min]).
    • Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning [one minute clean for one minute [coat+deposition] time.
    • Log out

Standard Nitride Deposition

"STD Si3N4 v3"

  1. Log in to Advanced PECVD #2
  2. Seasoning
    • Load the seasoning recipe (STD Si3N4 v3). Edit deposition time to 10min and run it. The goal of this step is to coat oxide on chamber walls and prepare it for deposition.
  3. Deposition
    • Vent the chamber and load the substrate (place it in the center of platen). You can place glass slides around the wafer to protect it from moving.
    • Pump down.
    • Load the deposition recipe (STD Si3N4 v3). Edit deposition time to desired time and run it. Deposition time is variable. Get the rate from historical data.
    • Unload the wafer.
  4. Cleaning
    • Wet clean: Wipe sidewall first with DI water, followed by IPA (Do wet clean only if [coat+deposition] time was >29min]).
    • Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning [(coat time+deposition time)/7].
    • Log out

Standard Low Stress Nitride Deposition

"STD LS-Si3N4 v4"

  1. Log in to Advanced PECVD #2
  2. Seasoning
    • Load the seasoning recipe (STD LS-Si3N4 v4). Edit deposition time to 10min and run it. The goal of this step is to coat oxide on chamber walls and prepare it for deposition.
  3. Deposition
    • Vent the chamber and load the substrate (place it in the center of platen). You can place small glass slides round the wafer to protect it from moving.
    • Pump down.
    • Load the deposition recipe (STD LS-Si3N4 v4). Edit deposition time to desired time and run it. Get the rate from historical data.
    • Make sure Loop is set correctly for HF/LF Process Step
    • Unload the wafer.
  4. Cleaning
    • Wet clean: Wipe sidewall first with DI water, followed by IPA (Do wet clean only if [coat+deposition] time was >29min]).
    • Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning [(coat time+deposition time)/7].
    • Log out
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