Wafer Coating Process Traveler: Difference between revisions

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There are three standard recipes : STD SiO2, STD Nitride2, and STD LS Nitride2 at 300C. Instructions bellow explain how to run each of the recipes ( seasoning, deposition, cleaning)
=== Unaxis deposition - SiO2 LDR film @250°C ===
'''SiO2 LDR- Oxide Low Deposition Rate'''


=== Standard Oxide Deposition ===
a) Prepare three 4” wafers:
* for seasoning (regular Si wafer ~500nm thick)
* for deposition (your wafer for deposition)
* for cleaning ( Si thick wafer~0.8-1um)
b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.


==== STD SiO v2 ====
c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.
#Log in to Advanced PECVD #2
* Seasoning recipe name: SiO2 seasoning, t=2min
#Seasoning
* Deposition recipe name: SiO2 LDR 250°C, t=VARIABLE sec
#*Load the seasoning recipe (STD SiO v2). Edit deposition time to 10min and run it. The goal of this step is to coat oxide on chamber walls and prepare it for deposition.
** Get rates from [[PECVD Recipes#Thin-Film Properties 6|historical data]].
#Deposition
* Cleaning recipe name: Post dep PD, t=VARIABLE sec
#*Vent the chamber and load the substrate (place it in the center of platen). You can place glass slides around the wafer to protect it from moving.
** Get rates for [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29 Cleaning Recipes Unaxis VLR] .
#*Pump down.
There is only one SiO2 seasoning recipe. This same recipe is used for seasoning for both LDR and HDR depositions. The goal in this step is to prepare the chamber and deposit ~200nm of SiO2 on walls.
#*Load the deposition recipe (STD SiO v2). Edit deposition time to desired time and run it. Deposition time is variable. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#PECVD_2_.28Advanced_Vacuum.29 historical data].
#*Unload the wafer.
#Cleaning
#*Wet clean: Wipe sidewall first with DI water, followed by IPA (Do wet clean only if [coat+deposition] time was >29min]).
#*Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning [one minute clean for one minute [coat+deposition] time.
#*Log out
=== Standard Nitride Deposition ===


==== "STD Si3N4 v3" ====
d) Run the job (name the job/select the wafer, execute the job)
#Log in to Advanced PECVD #2
#Seasoning
#*Load the seasoning recipe (STD Si3N4 v3). Edit deposition time to 10min and run it. The goal of this step is to coat oxide on chamber walls and prepare it for deposition.
#Deposition
#*Vent the chamber and load the substrate (place it in the center of platen). You can place glass slides around the wafer to protect it from moving.
#*Pump down.
#*Load the deposition recipe (STD Si3N4 v3). Edit deposition time to desired time and run it. Deposition time is variable. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#PECVD_2_.28Advanced_Vacuum.29 historical data].
#*Unload the wafer.
#Cleaning
#*Wet clean: Wipe sidewall first with DI water, followed by IPA (Do wet clean only if [coat+deposition] time was >29min]).
#*Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning [(coat time+deposition time)/7].
#*Log out


=== Standard Low Stress Nitride Deposition ===
e) Unload wafers ONLY when all runs are finished.


==== "STD LS-Si3N4 v4" ====
=== Unaxis deposition - 300nm SiO2 HDR film @250°C ===
#Log in to Advanced PECVD #2
'''SiO2 HDR - Oxide High Deposition Rate'''
#Seasoning

#*Load the seasoning recipe (STD LS-Si3N4 v4). Edit deposition time to 10min and run it. The goal of this step is to coat oxide on chamber walls and prepare it for deposition.
a) Prepare three 4” wafers:
#Deposition
* for seasoning (regular Si wafer ~500nm thick)
#*Vent the chamber and load the substrate (place it in the center of platen). You can place small glass slides round the wafer to protect it from moving.
* for deposition (your wafer for deposition)
#*Pump down.
* for cleaning ( Si thick wafer~0.8-1um )
#*Load the deposition recipe (STD LS-Si3N4 v4). Edit deposition time to desired time and run it. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#PECVD_2_.28Advanced_Vacuum.29 historical data].
b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.
#*Make sure Loop is set correctly for HF/LF Process Step

#*Unload the wafer.
c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.
#Cleaning
* Seasoning recipe name: SiO2 seasoning, t=2min
#*Wet clean: Wipe sidewall first with DI water, followed by IPA (Do wet clean only if [coat+deposition] time was >29min]).
* Deposition recipe name: SiO2 HDR 250°C, t=VARIABLE sec
#*Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning [(coat time+deposition time)/7].
** Get rates from [[PECVD Recipes#Thin-Film Properties 6|historical data]].
#*Log out
* Cleaning recipe name: Post dep PD, t=VARIABLE sec
** Get rates for [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29 Cleaning Recipes Unaxis VLR]
There is only one SiO2 seasoning recipe. This same recipe is used for seasoning for both LDR and HDR depositions. The goal in this step is to prepare the chamber and deposit ~200nm of SiO2 on walls.

d) Run the job (name the job/select the wafer, execute the job)

e) Unload wafers ONLY when all runs are finished.

=== Unaxis deposition - 300nm SiN film @250°C ===
'''SiN - Silicon Nitride'''

a) Prepare three 4” wafers:
* for seasoning (regular Si wafer ~500nm thick)
* for deposition (your wafer for deposition)
* for cleaning ( Si thick wafer~0.8-1um)
b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.

c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.
* Seasoning recipe name: SiN seasoning, t=5min
* Deposition recipe name: SiN 250°C, t=VARIABLE sec
** Get rates from [[PECVD Recipes#Thin-Film Properties 6|historical data]].
* Cleaning recipe name: Post dep PD, t=VARIABLE sec
** Get rates for [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29 Cleaning Recipes Unaxis VLR]
d) Run the job (name the job/select the wafer, execute the job)

e) Unload wafers ONLY when all runs are finished.

=== Unaxis deposition - 300nm SiN LS film @250°C ===
'''SiN LS - Silicon Nitride Low Stress'''

a) Prepare three 4”wafers:
* for seasoning (regular Si wafer ~500nm thick)
* for deposition (your wafer for deposition)
* for cleaning ( Si thick wafer~0.8-1um )
b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.

c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.
* Seasoning recipe name: SiN seasoning, t=2min
* Deposition recipe name: SiN LS 250°C, t=VARIABLE sec
** Get rates from [[PECVD Recipes#Thin-Film Properties 6|historical data]].
* Cleaning recipe name: Post dep PD, t=VARIABLE sec
** Get rates for [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29 Cleaning Recipes Unaxis VLR]
d) Run the job (name the job/select the wafer, execute the job)

e) Unload wafers ONLY when all runs are finished.

Latest revision as of 23:12, 19 February 2025

There are three standard recipes : STD SiO2, STD Nitride2, and STD LS Nitride2 at 300C. Instructions bellow explain how to run each of the recipes ( seasoning, deposition, cleaning)

Standard Oxide Deposition

STD SiO v2

  1. Log in to Advanced PECVD #2
  2. Seasoning
    • Load the seasoning recipe (STD SiO v2). Edit deposition time to 10min and run it. The goal of this step is to coat oxide on chamber walls and prepare it for deposition.
  3. Deposition
    • Vent the chamber and load the substrate (place it in the center of platen). You can place glass slides around the wafer to protect it from moving.
    • Pump down.
    • Load the deposition recipe (STD SiO v2). Edit deposition time to desired time and run it. Deposition time is variable. Get the rate from historical data.
    • Unload the wafer.
  4. Cleaning
    • Wet clean: Wipe sidewall first with DI water, followed by IPA (Do wet clean only if [coat+deposition] time was >29min]).
    • Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning [one minute clean for one minute [coat+deposition] time.
    • Log out

Standard Nitride Deposition

"STD Si3N4 v3"

  1. Log in to Advanced PECVD #2
  2. Seasoning
    • Load the seasoning recipe (STD Si3N4 v3). Edit deposition time to 10min and run it. The goal of this step is to coat oxide on chamber walls and prepare it for deposition.
  3. Deposition
    • Vent the chamber and load the substrate (place it in the center of platen). You can place glass slides around the wafer to protect it from moving.
    • Pump down.
    • Load the deposition recipe (STD Si3N4 v3). Edit deposition time to desired time and run it. Deposition time is variable. Get the rate from historical data.
    • Unload the wafer.
  4. Cleaning
    • Wet clean: Wipe sidewall first with DI water, followed by IPA (Do wet clean only if [coat+deposition] time was >29min]).
    • Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning [(coat time+deposition time)/7].
    • Log out

Standard Low Stress Nitride Deposition

"STD LS-Si3N4 v4"

  1. Log in to Advanced PECVD #2
  2. Seasoning
    • Load the seasoning recipe (STD LS-Si3N4 v4). Edit deposition time to 10min and run it. The goal of this step is to coat oxide on chamber walls and prepare it for deposition.
  3. Deposition
    • Vent the chamber and load the substrate (place it in the center of platen). You can place small glass slides round the wafer to protect it from moving.
    • Pump down.
    • Load the deposition recipe (STD LS-Si3N4 v4). Edit deposition time to desired time and run it. Get the rate from historical data.
    • Make sure Loop is set correctly for HF/LF Process Step
    • Unload the wafer.
  4. Cleaning
    • Wet clean: Wipe sidewall first with DI water, followed by IPA (Do wet clean only if [coat+deposition] time was >29min]).
    • Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning [(coat time+deposition time)/7].
    • Log out
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