UV Ozone Reactor: Difference between revisions
Jump to navigation
Jump to search
(Updated tool template) |
(→About: adding data for UV ozone 20min on Si quarter that was previously BHF etched [no native oxide].) |
||
| (One intermediate revision by one other user not shown) | |||
| Line 14: | Line 14: | ||
==Documentation== |
==Documentation== |
||
*[https://wiki.nanofab.ucsb.edu/w/images/3/3e/UV_Ozone_SOP_Rev_A.pdf UV Ozone Reactor SOP] |
|||
*[[UV Ozone Quick Start|Quick Start]] |
|||
*[//wiki.nanotech.ucsb.edu/wiki/images/7/79/UV_Ozone_Manual_Jelight_M-144AX.pdf UV Ozone Manual] |
*[//wiki.nanotech.ucsb.edu/wiki/images/7/79/UV_Ozone_Manual_Jelight_M-144AX.pdf UV Ozone Manual] |
||
*Data [Si quarter, 20min UV Ozone ~1nm thick oxide] |
|||
Latest revision as of 18:16, 23 April 2025
| ||||||||||||||||||||||||||||
About
UV+O (atomic oxygen) cleaning method is a photosensitized oxidation process in which the contaminant molecules of photo-resists, resins, human skin oils, cleaning solvent residues, silicone oils, and flux are excited and/or dissociated by the absorption of short-wavelength UV radiation. Near atomically clean surfaces can be achieved in less than one minute. In addition, this process does not damage any sensitive device structures of MOS gate oxide. The system can be used for oxygen activation, etching or oxidation of a surface without ion bombardment.
Documentation
- UV Ozone Reactor SOP
- UV Ozone Manual
- Data [Si quarter, 20min UV Ozone ~1nm thick oxide]