MLA Recipes: Difference between revisions

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|[[:File:SPR220-Positive-Resist-Datasheet.pdf|SPR 955 1.8]]
|4 krpm/30s
|95°C/90”
|~1.8 µm
|405
|210
| 10
|110°C/90s
|AZ300MIF
|60s
|UCSB design (good for dense lines~1um)
|-
|-
|[[:File:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|[[:File:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
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|60s
|60s
|Used MLA design
|Used MLA design
|-
|[[:File:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm/30s
|115°C/2m
|~7 µm
|405
|440
|5
|50°C/1m, ramp up, 115°C/90s
|AZ300MIF
|70s
|UCSB design 1um pillars/5um trenches]
|-
|-
|[[:File:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|[[:File:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
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|375
|375
|624mJ to clear large mm area, 520mJ to clear ~5um lines
|624mJ to clear large mm area, 520mJ to clear ~5um lines
|-20
|neg 20
|>1hr
|>1hr
|115C/90s
|115C/90s
|AZ300MIF
|AZ300MIF
|70s
|70s
|align="left"|
*TBD
*TBD
|Rehydration after exposure is necessary, to prevent bubbles at PEB
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Latest revision as of 19:20, 12 November 2024

Maskless Aligner (Heidelberg MLA150)

Photolithography Recipes for the Heidelberg MLA150. Description of litho params- different lasers available, greyscale etc.

Positive Resist (MLA150)

General notes: Hotplates used, filters, laser wavelengths, etc. “Soft Bake” is right after spin, “PEB” is post-exposure bake - right after exposure

Resist Spin Cond. Soft Bake Thickness Laser (nm) Exposure Dose (mJ/cm2) DeFocus Post-Exposure Bake Developer Developer Time Comments
AZ4110 4 krpm/30s 95°C/60s ~ 1.1 µm 405 240 5 none AZ400K:DI 1:4 50s Used MLA design (good for isolated lines 0.8-1um)
AZ4330 4 krpm/30s 95°C/60s ~ 3.3 µm 405 320 6 none AZ400K:DI 1:4 90s Used MLA design
AZ4620
SPR 955 1.8 4 krpm/30s 95°C/90” ~1.8 µm 405 210 10 110°C/90s AZ300MIF 60s UCSB design (good for dense lines~1um)
SPR 220-3.0 2.5 krpm/30s 115°C/90” ~ 2.7 µm 405 325 - 4 115°C/90s AZ300MIF 60s Used MLA design
SPR 220-7.0 3.5 krpm/30s 115°C/2m ~7 µm 405 440 5 50°C/1m, ramp up, 115°C/90s AZ300MIF 70s UCSB design 1um pillars/5um trenches]
SPR 955-CM0.9 3 krpm/30s 95°C/90” ~ 0.9 µm 405 250 - 7 110°C/90s AZ300MIF 60s Used MLA design, [for 5um pillars/1um trench:150/5]
THMR-3600HP 1.5 krpm/45s250 rpm/s 100°C/60s 0.430µm 405 180–220 -4 100°C/60s AZ300MiF 20s line/space:

low dose for clear-field, high does for dark-field

Negative Resist (MLA150)

General notes: Hotplates used, filters, laser wavelengths, etc. “Soft Bake” is right after spin, “PEB” is post-exposure bake - right after exposure. “Flood exposure” is only for AZ5214 for image reversal, after PEB.

Resist Spin Cond. Soft Bake Thickness Laser (nm) Exposure Dose (mJ/cm2) DeFocus PEB Flood Developer Developer Time Comments
AZ5214 6 krpm/30s 95°C/60s ~ 1.0 µm 375 35 - 5 110°C/60s 60" AZ300MIF 60s Used UCSB design. Good for up to ~1.3um open line space.
AZnLOF2020 4 krpm/30s 110°C/60s ~ 2.1µm 375 340 - 3 110°C/60s none AZ300MIF 90s Used UCSB design. Good for 2um open line space.
SU-8 2075 ~70µm 375 Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.

Greyscale Lithography (MLA150)

Description...

Resist Spin Cond. Bake Thickness Laser Exposure Dose (mJ/cm2) Focus Offset Rehydrate PEB Flood Developer Developer Time Comments
AZ4620 – krpm/30” 95°C/60” 60" AZ300MIF 60"
  • TBD
SPR 220-7 –3.5krpm/30” 105°C/120” Cool 1min ~7um 375 624mJ to clear large mm area, 520mJ to clear ~5um lines neg 20 >1hr 115C/90s AZ300MIF 70s
  • TBD
 Rehydration after exposure is necessary, to prevent bubbles at PEB
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