Dry Etching Recipes: Difference between revisions

From UCSB Nanofab Wiki
Jump to navigation Jump to search
(ficp etch ranking data pt5)
(Changed FICP Si to R6 and OXFD GaN to R3)
 
(41 intermediate revisions by 3 users not shown)
Line 1: Line 1:
===<u>[[Process Group - Process Control Data#Etching .28Process Control Data.29|Process Control Data]]</u>===
===<u>[[Process Group - Process Control Data#Etching .28Process Control Data.29|Process Control Data]]</u>===
<small>''See [[Process Group - Process Control Data#Etching .28Process Control Data.29|linked page]] for [https://en.wikipedia.org/wiki/Statistical_process_control process control data] (dep rate/stress etc. over time), for a selection of often-used thin-film depositions.''</small>
<small>''See above [[Process Group - Process Control Data#Etching .28Process Control Data.29|linked page]] for [https://en.wikipedia.org/wiki/Statistical_process_control process control data] (dep rate/stress etc. over time), for a selection of often-used dry etches''</small>


===Dry Etching Tools/Materials Table===
===Dry Etching Tools/Materials Table===
''The Key/Legend for this table's <code>A...R6</code> values is at the [[Dry Etching Recipes#Process Ranking Table|bottom of the page]].''

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|-
|-
! colspan="17" width="725" height="45" |<div style="font-size: 150%;">Dry Etching Recipes</div>
! colspan="15" width="725" height="45" |<div style="font-size: 150%;">Dry Etching Recipes</div>
|- bgcolor="#d0e7ff"
|- bgcolor="#d0e7ff"
| bgcolor="#eaecf0" |<!-- INTENTIONALLY LEFT BLANK -->
| bgcolor="#eaecf0" |<!-- INTENTIONALLY LEFT BLANK -->
! colspan="3" |'''[[RIE Etching Recipes|RIE Etching]]'''
! colspan="2" |'''[[RIE Etching Recipes|RIE Etching]]'''
! colspan="6" |'''[[ICP Etching Recipes|ICP Etching]]'''
! colspan="5" |'''[[ICP Etching Recipes|ICP Etching]]'''
! colspan="4" bgcolor="#d0e7ff" align="center" |'''[[Oxygen Plasma System Recipes|Oxygen Plasma Systems]]'''
! colspan="4" bgcolor="#d0e7ff" align="center" |'''[[Oxygen Plasma System Recipes|Oxygen Plasma Systems]]'''
! colspan="3" bgcolor="#d0e7ff" align="center" |'''[[Other Dry Etching Recipes|Other Dry Etchers]]'''
! colspan="3" bgcolor="#d0e7ff" align="center" |'''[[Other Dry Etching Recipes|Other Dry Etchers]]'''
Line 16: Line 16:
! bgcolor="#d0e7ff" align="center" |'''Material'''
! bgcolor="#d0e7ff" align="center" |'''Material'''
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_2_.28MRC.29|RIE 2<br> <span style="font-size: 88%;">(MRC)</span>]]
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_2_.28MRC.29|RIE 2<br> <span style="font-size: 88%;">(MRC)</span>]]
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_3_.28MRC.29|RIE 3<br> <span style="font-size: 88%;">(MRC)</span>]]
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_5_.28PlasmaTherm.29|RIE 5<br><span style="font-size: 88%;">(PlasmaTherm)</span>]]
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_5_.28PlasmaTherm.29|RIE 5<br><span style="font-size: 88%;">(PlasmaTherm)</span>]]
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29|DSEIII<br><span style="font-size: 88%;">(PlasmaTherm)</span>]]
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29|DSEIII<br><span style="font-size: 88%;">(PlasmaTherm)</span>]]
Line 23: Line 22:
| bgcolor="#daf1ff" |[[ICP Etching Recipes#ICP Etch 2 .28Panasonic E626I.29|ICP Etch 2<br><span style="font-size: 88%;">(Panasonic E626I)</span>]]
| bgcolor="#daf1ff" |[[ICP Etching Recipes#ICP Etch 2 .28Panasonic E626I.29|ICP Etch 2<br><span style="font-size: 88%;">(Panasonic E626I)</span>]]
| bgcolor="#daf1ff" |[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford ICP <span style="font-size: 88%;">(PlasmaPro 100)</span>]]
| bgcolor="#daf1ff" |[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford ICP <span style="font-size: 88%;">(PlasmaPro 100)</span>]]
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP-Etch_.28Unaxis_VLR.29|ICP-Etch<br><span style="font-size: 88%;">(Unaxis VLR)</span>]]
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Ashers_.28Technics_PEII.29|Ashers<br><span style="font-size: 88%;">(Technics PEII)</span>]]
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Ashers_.28Technics_PEII.29|Ashers<br><span style="font-size: 88%;">(Technics PEII)</span>]]
| bgcolor="#daf1ff" |[[Oxygen Plasma System Recipes#Plasma Clean .28YES EcoClean.29|Plasma Clean <span style="font-size: 88%;">(YES EcoClean)</span>]]
| bgcolor="#daf1ff" |[[Oxygen Plasma System Recipes#Plasma Clean .28YES EcoClean.29|Plasma Clean <span style="font-size: 88%;">(YES EcoClean)</span>]]
Line 46: Line 44:
|
|
|
|
|
|R1
|
|A
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |Al
! bgcolor="#d0e7ff" align="center" |Al
|
|
|[[RIE Etching Recipes|R2]]
|
|
|[[RIE Etching Recipes|A]]
|
|
|{{rl|ICP Etching Recipes|Al Etch (Panasonic 1)|R1}}
|[[ICP Etching Recipes#Al Etch .28Panasonic 2.29|R2]]
|
|
|{{rl|ICP Etching Recipes|Al Etch (Panasonic 1)}}
|{{rl|ICP Etching Recipes|Al Etch (Panasonic 2)}}
|
|
|
|
Line 64: Line 60:
|
|
|
|
|
|R1
|
|A
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |Au
! bgcolor="#d0e7ff" align="center" |Au
Line 82: Line 76:
|
|
|
|
|[[Other Dry Etching Recipes|R4]]
|
|
|{{rl|Other Dry Etching Recipes|Other Dry Etch (CAIBE (Oxford Ion Mill))}}
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |Cr
! bgcolor="#d0e7ff" align="center" |Cr
|
|
|[[RIE Etching Recipes|R2]]
|
|A
|
|
|
|
|{{rl|ICP Etching Recipes|Cr Etch (Panasonic 1)}}
|{{rl|ICP Etching Recipes|Cr Etch (Panasonic 1)}}
|A
|R1
|
|
|
|
Line 101: Line 92:
|
|
|
|
|
|R1
|A
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |Cu
! bgcolor="#d0e7ff" align="center" |Cu
Line 118: Line 108:
|
|
|
|
|
|R1
|
|A
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |Ge
! bgcolor="#d0e7ff" align="center" |Ge
|
|
|
|
|
Line 129: Line 116:
|
|
|A
|A
|A
|R1
|
|
|
|
Line 135: Line 122:
|
|
|
|
|[[Other Dry Etching Recipes|R2]]
|
|
|A
|R1
|
|A
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |Mo
! bgcolor="#d0e7ff" align="center" |Mo
Line 154: Line 140:
|
|
|
|
|
|R1
|
|A
|-
|-
!Nb
!Nb
|
|
|
|
|
Line 165: Line 148:
|
|
|A
|A
|A
|R1
|
|
|
|
|
Line 190: Line 172:
|
|
|
|
|[[Other Dry Etching Recipes|R4]]
|
|
|{{rl|Other Dry Etching Recipes|Other Dry Etch (CAIBE (Oxford Ion Mill))}}
|-
|-
!Os
!Os
|
|
|
|
|
Line 201: Line 180:
|
|
|A
|A
|A
|R1
|
|
|
|
|
Line 226: Line 204:
|
|
|
|
|[[Other Dry Etching Recipes|R4]]
|
|
|{{rl|Other Dry Etching Recipes|Other Dry Etch (CAIBE (Oxford Ion Mill))}}
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |Ru
! bgcolor="#d0e7ff" align="center" |Ru
|
|
|
|
|
Line 237: Line 212:
|
|
|A
|A
|{{Rl|ICP Etching Recipes|Ru (Ruthenium) Etch (Panasonic 2)}}
|[[ICP Etching Recipes#Ru .28Ruthenium.29 Etch .28Panasonic 2.29|R3]]
|
|
|
|
Line 245: Line 220:
|
|
|
|
|
|R1
|A
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |Si
! bgcolor="#d0e7ff" align="center" |Si
|
|
|
|
|[[ICP Etching Recipes#DSEIII .28PlasmaTherm.2FDeep Silicon Etcher.29|R6]]
|[[ICP Etching Recipes#Si Etching .28Fluorine ICP Etcher.29|R6]]
|
|
|{{rl|ICP Etching Recipes|DSEIII_(PlasmaTherm/Deep_Silicon_Etcher)}}
|[[ICP Etching Recipes#Si Etching .28Fluorine ICP Etcher.29|R3]]
|
|
|R1
|
|
|A
|
|
|
|
|
|
|[[Other Dry Etching Recipes|R4]]
|
|
|
|R1
|{{rl|Other Dry Etching Recipes|Other Dry Etch (XeF2 Etcher)}}
|
|A
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |Ta
! bgcolor="#d0e7ff" align="center" |Ta
Line 271: Line 243:
|
|
|
|
|
|A
|A
|A
|R1
|
|
|
|
Line 281: Line 252:
|
|
|
|
|
|R1
|A
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |Ti
! bgcolor="#d0e7ff" align="center" |Ti
|
|
|
|
|
Line 291: Line 260:
|
|
|{{rl|ICP Etching Recipes|Ti Etch (Panasonic 1)}}
|{{rl|ICP Etching Recipes|Ti Etch (Panasonic 1)}}
|A
|R1
|
|
|
|
|
|
|
|R1
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |W
|
|
|
|R2
|{{rl|ICP Etching Recipes|W-TiW Etch (Panasonic 1)}}
|R1
|
|
|
|
|
|
|
|R1
|-
!TiW
|
|
|
|R2
|
|R1
|
|
|
|
Line 300: Line 301:
|
|
|
|
|A
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3</sub>
! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3</sub>
|
|
|
|
|
Line 309: Line 308:
|
|
|A
|A
|[[ICP Etching Recipes#Al2O3 Etching .28Panasonic 2.29|R3]]
|[https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#Al2O3_Etching_.28Panasonic_2.29 R]
|
|
|
|
Line 317: Line 316:
|
|
|
|
|
|R1
|A
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3 (Sapphire)</sub>
! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3 (Sapphire)</sub>
|
|
|
|
|
Line 327: Line 324:
|
|
|{{rl|ICP Etching Recipes|Sapphire Etch (Panasonic 1)}}
|{{rl|ICP Etching Recipes|Sapphire Etch (Panasonic 1)}}
|A
|R1
|
|
|
|
Line 335: Line 332:
|
|
|
|
|
|R1
|A
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |AlGaAs
! bgcolor="#d0e7ff" align="center" |AlGaAs
|
|
|[[RIE Etching Recipes|R3]]
|
|{{rl|RIE Etching Recipes|AlGaAs\GaAs Etching (RIE 5)}}
|
|
|
|
|{{rl|ICP Etching Recipes|GaAs-AlGaAs Etch (Panasonic 1)}}
|{{rl|ICP Etching Recipes|GaAs-AlGaAs Etch (Panasonic 1)}}
|
|
|[[ICP Etching Recipes#GaAs Etch .28Oxford ICP Etcher.29|R]]
|[[ICP Etching Recipes#GaAs Etch .28Oxford ICP Etcher.29|R3]]
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|GaAs-AlGaAs Etch (Unaxis VLR)|AlGaAs Etch (Unaxis VLR)}}
|
|
|
|
Line 354: Line 348:
|
|
|
|
|A
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |AlGaN
! bgcolor="#d0e7ff" align="center" |AlGaN
Line 363: Line 357:
|
|
|
|
|[[ICP Etching Recipes#GaN Etch .28Oxford ICP Etcher.29|R2]]
|
|
|[[ICP Etching Recipes#GaN Etch .28Oxford ICP Etcher.29|R]]
|{{rl|ICP Etching Recipes|GaN Etch (Unaxis VLR)}}
|
|
|
|
Line 371: Line 364:
|
|
|
|
|
|R1
|A
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |AlN
! bgcolor="#d0e7ff" align="center" |AlN
Line 383: Line 375:
|
|
|
|
|{{rl|ICP Etching Recipes|GaN Etch (Unaxis VLR)}}
|
|
|
|
Line 389: Line 380:
|
|
|
|
|
|R1
|A
|-
|-
!BCB
!BCB
|
|
|
|
|
Line 399: Line 388:
|
|
|A
|A
|
|
|
|
|
Line 411: Line 399:
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |CdZnTe
! bgcolor="#d0e7ff" align="center" |CdZnTe
|{{rl|RIE Etching Recipes|CdZnTe Etch (RIE 2)}}
|[[RIE Etching Recipes|R3]]
|
|
|
|
Line 424: Line 412:
|
|
|
|
|
|R1
|
|A
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |GaAs
! bgcolor="#d0e7ff" align="center" |GaAs
|
|
|[[RIE Etching Recipes|R4]]
|
|{{rl|RIE Etching Recipes|AlGaAs\GaAs Etching (RIE 5)}}
|
|
|
|
|{{rl|ICP Etching Recipes|GaAs-AlGaAs Etch (Panasonic 1)}}
|{{rl|ICP Etching Recipes|GaAs-AlGaAs Etch (Panasonic 1)}}
|{{rl|ICP Etching Recipes|GaAs Etch (Panasonic 2)}}
|[[ICP Etching Recipes#GaAs Etch .28Panasonic 2.29|R3]]
|[[ICP Etching Recipes#GaAs Etch .28Oxford ICP Etcher.29|R]]
|[[ICP Etching Recipes#GaAs Etch .28Oxford ICP Etcher.29|R2]]
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|GaAs-AlGaAs Etch (Unaxis VLR)|GaAs Etch (Unaxis VLR)}}
|
|
|
|
Line 444: Line 428:
|
|
|
|
|A
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |GaN
! bgcolor="#d0e7ff" align="center" |GaN
|
|
|[[RIE Etching Recipes|R4]]
|
|{{rl|RIE Etching Recipes|GaN Etching (RIE 5)}}
|
|
|
|
|{{rl|ICP Etching Recipes|GaN Etch (Panasonic 1)}}
|{{rl|ICP Etching Recipes|GaN Etch (Panasonic 1)}}
|A
|R1
|[[ICP Etching Recipes#GaN Etch .28Oxford ICP Etcher.29|R]]
|[[ICP Etching Recipes#GaN Etch .28Oxford ICP Etcher.29|R3]]
|{{rl|ICP Etching Recipes|GaN Etch (Unaxis VLR)}}
|
|
|
|
Line 462: Line 444:
|
|
|
|
|A
|R1
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |GaSb
! bgcolor="#d0e7ff" align="center" |GaSb
|
|
|
|
|
Line 471: Line 452:
|
|
|A
|A
|A
|R1
|A
|R1
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|GaSb Etch Unaxis VLR)}}
|
|
|
|
Line 480: Line 460:
|
|
|
|
|A
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |HfO<sub>2</sub>
! bgcolor="#d0e7ff" align="center" |HfO<sub>2</sub>
Line 496: Line 476:
|
|
|
|
|
|R1
|
|A
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |InGaAlAs
! bgcolor="#d0e7ff" align="center" |InGaAlAs
|{{rl|RIE Etching Recipes|RIE 2 (MRC)|InP-InGaAsP-InGaAlAs Etching (RIE 2)|InP Etch (RIE 2)}}
|[[RIE Etching Recipes|R4]]
|
|
|
|
Line 507: Line 485:
|
|
|
|
|R1
|
|
|A
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|InP-InGaAs-InAlAs Etch (Unaxis VLR)|InP Etch (Unaxis VLR)}}
|
|
|
|
Line 515: Line 492:
|
|
|
|
|
|R1
|A
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |InGaAsP
! bgcolor="#d0e7ff" align="center" |InGaAsP
|{{rl|RIE Etching Recipes|RIE 2 (MRC)|InP-InGaAsP-InGaAlAs Etching (RIE 2)|InP Etch (RIE 2)}}
|[[RIE Etching Recipes|R4]]
|
|
|
|
Line 525: Line 501:
|
|
|
|
|[[ICP Etching Recipes#InP Ridge Etch .28Oxford ICP Etcher.29|R3]]
|
|
|[[ICP Etching Recipes#InP Ridge Etch .28Oxford ICP Etcher.29|R]]
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|InP-InGaAs-InAlAs Etch (Unaxis VLR)|InP Etch (Unaxis VLR)}}
|
|
|
|
Line 533: Line 508:
|
|
|
|
|
|R1
|A
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |InP
! bgcolor="#d0e7ff" align="center" |InP
|{{rl|RIE Etching Recipes|RIE 2 (MRC)|InP-InGaAsP-InGaAlAs Etching (RIE 2)|InP Etch (RIE 2)}}
|[[RIE Etching Recipes|R4]]
|
|
|
|
|
|
|
|A
|A
|A
|R1
|[[ICP Etching Recipes#InP Ridge Etch .28Oxford ICP Etcher.29|R]]
|[[ICP Etching Recipes#InP Ridge Etch .28Oxford ICP Etcher.29|R6]]
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|InP-InGaAs-InAlAs Etch (Unaxis VLR)|InP Etch (Unaxis VLR)}}
|
|
|
|
Line 552: Line 524:
|
|
|
|
|{{rl|Other Dry Etching Recipes|Other Dry Etch (CAIBE (Oxford Ion Mill))}}
|[[Other Dry Etching Recipes|R4]]
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |ITO
! bgcolor="#d0e7ff" align="center" |ITO
|{{rl|RIE Etching Recipes|ITO Etch (RIE 2)}}
|[[RIE Etching Recipes|R4]]
|
|
|
|
Line 568: Line 540:
|
|
|
|
|
|R1
|
|A
|-
|-
!LiNbO3
!LiNbO3
Line 586: Line 556:
|
|
|
|
|
|R1
|
|A
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
!Photoresist
!Photoresist & Organics
& ARC
|
|
|[[RIE Etching Recipes|R3]]
|A
|[https://wiki.nanotech.ucsb.edu/wiki/RIE_Etching_Recipes#Photoresist_and_ARC_.28RIE_5.29 R]
|
|
|[[ICP Etching Recipes#Photoresist .26 ARC .28Fluorine ICP Etcher.29|R3]]
|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_.26_ARC_.28Fluorine_ICP_Etcher.29 R4]
|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_and_ARC_Etching_.28Panasonic_1.29 R]
|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_and_ARC_Etching_.28Panasonic_1.29 R]
|[[ICP Etching Recipes#Al2O3 Etching .28Panasonic 2.29|R3]]
|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_and_ARC_etching_.28Panasonic_2.29 R]
|
|
|R3
|[[Oxygen Plasma System Recipes#O2 Ashing|R3]]
|[[Oxygen Plasma System Recipes#O2 Ashing|R3]]
|
|
|[[Oxygen Plasma System Recipes#O2 Ashing|R]]
|[[Oxygen Plasma System Recipes#Plasma Clean .28YES EcoClean.29|R]]
|
|
|
|
|
|R1
|
|A
|-
|-
!ARC (Anti Reflective Coating)
!Ru
|
|
|
|
|
|
|[[ICP Etching Recipes#Photoresist .26 ARC .28Fluorine ICP Etcher.29|R3]]
|
|
|
|A
|[[ICP Etching Recipes#Ru .28Ruthenium.29 Etch .28Panasonic 2.29|R]]
|
|
|
|
Line 628: Line 591:
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |SiC
! bgcolor="#d0e7ff" align="center" |SiC
|
|
|
|
|
Line 634: Line 596:
|
|
|{{rl|ICP Etching Recipes|SiC Etch (Panasonic 1)}}
|{{rl|ICP Etching Recipes|SiC Etch (Panasonic 1)}}
|A
|R1
|
|
|
|
Line 642: Line 604:
|
|
|
|
|
|R1
|A
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |SiN
! bgcolor="#d0e7ff" align="center" |SiN
|
|
|{{rl|RIE Etching Recipes|RIE 3 (MRC)|SiN<sub>x</sub> Etching (RIE 3)}}
|
|
|
|
|[[ICP Etching Recipes#Si3N4 Etching .28Fluorine ICP Etcher.29|R4]]
|[[ICP Etching Recipes#Si3N4 Etching .28Fluorine ICP Etcher.29|R3]]
|{{rl|ICP Etching Recipes|SiNx Etching (Panasonic 1)}}
|{{rl|ICP Etching Recipes|SiNx Etching (Panasonic 1)}}
|{{rl|ICP Etching Recipes|SiNx Etching (Panasonic 2)}}
|[[ICP Etching Recipes#SiNx Etching .28Panasonic 2.29|R3]]
|
|
|[[Oxygen Plasma System Recipes#O2 Ashing|R3]]
|
|
|A
|
|
|
|
|
|
|
|
|
|R1
|A
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |SiO<sub>2</sub>
! bgcolor="#d0e7ff" align="center" |SiO<sub>2</sub>
|
|
|{{rl|RIE Etching Recipes|RIE 3 (MRC)|SiO<sub>2</sub> Etching (RIE 3)}}
|
|
|
|
|[[ICP Etching Recipes#SiO2 Etching .28Fluorine ICP Etcher.29|R6]]
|[[ICP Etching Recipes#SiO2 Etching .28Fluorine ICP Etcher.29|R6]]
|{{rl|ICP Etching Recipes|SiO2 Etching (Panasonic 1)}}
|{{rl|ICP Etching Recipes|SiO2 Etching (Panasonic 1)}}
|{{rl|ICP Etching Recipes|SiO2 Etching (Panasonic 2)}}
|[[ICP Etching Recipes#SiO2 Etching .28Panasonic 2.29|R6]]
|
|
|
|
Line 677: Line 635:
|
|
|
|
|[[Other Dry Etching Recipes|R4]]
|
|R1
|{{rl|Other Dry Etching Recipes|Other Dry Etch (Vapor HF Etcher)}}
|A
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |SiOxNy
! bgcolor="#d0e7ff" align="center" |SiOxNy
|
|
|
|
|
Line 688: Line 644:
|
|
|A
|A
|A
|R1
|
|
|
|
Line 696: Line 652:
|
|
|
|
|
|R1
|A
|-
|-
!SU8
!SU8
|
|
|
|
|
Line 706: Line 660:
|
|
|A
|A
|
|
|
|
|
Line 718: Line 671:
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |Ta<sub>2</sub>O<sub>5</sub>
! bgcolor="#d0e7ff" align="center" |Ta<sub>2</sub>O<sub>5</sub>
|
|
|
|
|
Line 724: Line 676:
|
|
|A
|A
|R1
|[https://www.osapublishing.org/optica/abstract.cfm?uri=optica-4-5-532 A]
|
|
|
|
Line 732: Line 684:
|
|
|
|
|
|R1
|A
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |TiN
! bgcolor="#d0e7ff" align="center" |TiN
Line 749: Line 700:
|
|
|
|
|
|R1
|
|A
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |TiO<sub>2</sub>
! bgcolor="#d0e7ff" align="center" |TiO<sub>2</sub>
Line 767: Line 716:
|
|
|
|
|
|R1
|
|A
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |W-TiW
|
|
|
|
|
|{{rl|ICP Etching Recipes|W-TiW Etch (Panasonic 1)}}
|A
|
|
|
|
|
|
|
|
|A
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |ZnO<sub>2</sub>
! bgcolor="#d0e7ff" align="center" |ZnO<sub>2</sub>
Line 803: Line 732:
|
|
|
|
|
|R1
|
|A
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |ZnS
! bgcolor="#d0e7ff" align="center" |ZnS
|{{rl|RIE Etching Recipes|ZnS Etching (RIE 2)}}
|[[RIE Etching Recipes|R3]]
|
|
|
|
Line 821: Line 748:
|
|
|
|
|
|R1
|
|A
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |ZnSe
! bgcolor="#d0e7ff" align="center" |ZnSe
|{{rl|RIE Etching Recipes|ZnS Etching (RIE 2)}}
|[[RIE Etching Recipes|R2]]
|
|
|
|
Line 839: Line 764:
|
|
|
|
|
|R1
|
|A
|- bgcolor="#ffffff"
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |ZrO<sub>2</sub>
! bgcolor="#d0e7ff" align="center" |ZrO<sub>2</sub>
Line 857: Line 780:
|
|
|
|
|
|R1
|
|A
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |'''Material'''
! bgcolor="#d0e7ff" align="center" |'''Material'''
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_2_.28MRC.29|RIE 2<br> <span style="font-size: 88%;">(MRC)</span>]]
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_2_.28MRC.29|RIE 2<br> <span style="font-size: 88%;">(MRC)</span>]]
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_3_.28MRC.29|RIE 3<br> <span style="font-size: 88%;">(MRC)</span>]]
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_5_.28PlasmaTherm.29|RIE 5<br><span style="font-size: 88%;">(PlasmaTherm)</span>]]
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_5_.28PlasmaTherm.29|RIE 5<br><span style="font-size: 88%;">(PlasmaTherm)</span>]]
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29|DSEIII<br><span style="font-size: 88%;">(PlasmaTherm)</span>]]
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29|DSEIII<br><span style="font-size: 88%;">(PlasmaTherm)</span>]]
| bgcolor="#daf1ff" |[[ICP Etching Recipes#PlasmaTherm.2FSLR Fluorine Etcher|Fluorine ICP <span style="font-size: 88%;">(PlasmaTherm)</span>]]
| bgcolor="#daf1ff" |[[ICP Etching Recipes#PlasmaTherm.2FSLR Fluorine Etcher|Fluorine ICP <span style="font-size: 88%;">(PlasmaTherm)</span>]]
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP_Etch_1_.28Panasonic_E626I.29|ICP Etch 1<br><span style="font-size: 88%;">(Panasonic E626I)</span>]]
| bgcolor="#daf1ff" |[[ICP Etching Recipes#ICP Etch 1 .28Panasonic E646V.29|ICP Etch 1<br><span style="font-size: 88%;">(Panasonic E626I)</span>]]
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP_Etch_2_.28Panasonic_E640.29|ICP Etch 2<br><span style="font-size: 88%;">(Panasonic E640)</span>]]
| bgcolor="#daf1ff" |[[ICP Etching Recipes#ICP Etch 2 .28Panasonic E626I.29|ICP Etch 2<br><span style="font-size: 88%;">(Panasonic E640)</span>]]
| bgcolor="#daf1ff" |[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford ICP <span style="font-size: 88%;">(PlasmaPro 100)</span>]]
| bgcolor="#daf1ff" |[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford ICP <span style="font-size: 88%;">(PlasmaPro 100)</span>]]
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP-Etch_.28Unaxis_VLR.29|ICP-Etch<br><span style="font-size: 88%;">(Unaxis VLR)</span>]]
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Ashers_.28Technics_PEII.29|Ashers<br><span style="font-size: 88%;">(Technics PEII)</span>]]
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Ashers_.28Technics_PEII.29|Ashers<br><span style="font-size: 88%;">(Technics PEII)</span>]]
| bgcolor="#daf1ff" |[[Oxygen Plasma System Recipes#Plasma Clean .28YES EcoClean.29|Plasma Clean <span style="font-size: 88%;">(YES EcoClean)</span>]]
| bgcolor="#daf1ff" |[[Oxygen Plasma System Recipes#Plasma Clean .28YES EcoClean.29|Plasma Clean <span style="font-size: 88%;">(YES EcoClean)</span>]]
Line 881: Line 800:


==='''Process Ranking Table'''===
==='''Process Ranking Table'''===
Processes in the table above are ranked by their "''Process Maturity Level''" as follows:
{| class="wikitable"
{| class="wikitable"
|Process Level
!Process Level
| colspan="11" |Description of Process Level Ranking
! colspan="11" |Description of Process Level Ranking
|-
|-
|A
|A
| colspan="11" |Process allowed and materials available but never done
| colspan="11" |Process '''A'''llowed and materials available but never done
|-
|-
|R1
|R1
| colspan="11" |Process has been ran at least once
| colspan="11" |Process has been run at least once
|-
|-
|R2
|R2
| colspan="11" |Process has been ran and/or procedure is documented or/and data available
| colspan="11" |Process has been run and/or procedure is documented or/and data available
|-
|-
|R3
|R3
| colspan="11" |Process has been ran, procedure is documented, and data is available
| colspan="11" |Process has been run, procedure is documented, and data is available
|-
|-
|R4
|R4
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data or lookahead/in-Situ control available
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''or''' lookahead/in-situ control available
|-
|-
|R5
|R5
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data and lookahead/in-Situ control available
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' lookahead/in-situ control available
|-
|-
|R6
|R6
| colspan="11" |Process has a documented procedure, regular ( ≥4x per year) data, and control charts/limits available
| colspan="11" |Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available
|}
|}
[[Category:Processing]]
[[Category:Processing]]

Latest revision as of 00:41, 22 October 2024

Process Control Data

See above linked page for process control data (dep rate/stress etc. over time), for a selection of often-used dry etches

Dry Etching Tools/Materials Table

The Key/Legend for this table's A...R6 values is at the bottom of the page.

Dry Etching Recipes
RIE Etching ICP Etching Oxygen Plasma Systems Other Dry Etchers
Material RIE 2
(MRC)
RIE 5
(PlasmaTherm)
DSEIII
(PlasmaTherm)
Fluorine ICP (PlasmaTherm) ICP Etch 1
(Panasonic E646V)
ICP Etch 2
(Panasonic E626I)
Oxford ICP (PlasmaPro 100) Ashers
(Technics PEII)
Plasma Clean (YES EcoClean) UV Ozone Reactor Plasma Activation
(EVG 810)
XeF2 Etch
(Xetch)
Vapor HF Etch
(uETCH)
CAIBE
(Oxford)
Ag R1
Al R2 R1 R2 R1
Au R4
Cr R2 R1 R1 R1
Cu R1
Ge A R1 R2 R1
Mo R1
Nb A R1
Ni R4
Os A R1
Pt R4
Ru A R3 R1
Si R6 R6 R1 R4 R1
Ta A R1 R1
Ti R1 R1 R1
W R2 R1 R1 R1
TiW R2 R1
Al2O3 A R3 R1
Al2O3 (Sapphire) R1 R1 R1
AlGaAs R3 R1 R3 R1
AlGaN R2 R1
AlN R1
BCB A
CdZnTe R3 R1
GaAs R4 R1 R3 R2 R1
GaN R4 R1 R1 R3 R1
GaSb A R1 R1 R1
HfO2 R1
InGaAlAs R4 R1 R1
InGaAsP R4 R3 R1
InP R4 A R1 R6 R4
ITO R4 R1
LiNbO3 R1
Photoresist & Organics R3 R3 R R3 R3 R3 R3 R1
ARC (Anti Reflective Coating) R3
SiC R1 R1 R1
SiN R3 R1 R3 R3 R1
SiO2 R6 R1 R6 R4 R1
SiOxNy A R1 R1
SU8 A
Ta2O5 A R1 R1
TiN R1
TiO2 R1
ZnO2 R1
ZnS R3 R1
ZnSe R2 R1
ZrO2 R1
Material RIE 2
(MRC)
RIE 5
(PlasmaTherm)
DSEIII
(PlasmaTherm)
Fluorine ICP (PlasmaTherm) ICP Etch 1
(Panasonic E626I)
ICP Etch 2
(Panasonic E640)
Oxford ICP (PlasmaPro 100) Ashers
(Technics PEII)
Plasma Clean (YES EcoClean) UV Ozone Reactor Plasma Activation
(EVG 810)
XeF2 Etch
(Xetch)
Vapor HF Etch
(uETCH)
CAIBE
(Oxford)

Process Ranking Table

Processes in the table above are ranked by their "Process Maturity Level" as follows:

Process Level Description of Process Level Ranking
A Process Allowed and materials available but never done
R1 Process has been run at least once
R2 Process has been run and/or procedure is documented or/and data available
R3 Process has been run, procedure is documented, and data is available
R4 Process has a documented procedure with regular (≥4x per year) data or lookahead/in-situ control available
R5 Process has a documented procedure with regular (≥4x per year) data and lookahead/in-situ control available
R6 Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available