Dry Etching Recipes: Difference between revisions
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===<u> |
===<u>[[Process Group - Process Control Data#Etching .28Process Control Data.29|Process Control Data]]</u>=== |
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<small>''See above [[Process Group - Process Control Data#Etching .28Process Control Data.29|linked page]] for [https://en.wikipedia.org/wiki/Statistical_process_control process control data] (dep rate/stress etc. over time), for a selection of often-used dry etches''</small> |
<small>''See above [[Process Group - Process Control Data#Etching .28Process Control Data.29|linked page]] for [https://en.wikipedia.org/wiki/Statistical_process_control process control data] (dep rate/stress etc. over time), for a selection of often-used dry etches''</small> |
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===Dry Etching Tools/Materials Table=== |
===Dry Etching Tools/Materials Table=== |
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==== Process Maturity Ranking ==== |
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* <code>'''R6'''</code> - most mature process with regular calibrations recorded on SPC charts. |
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* … |
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* <code>'''R1'''</code> - least mature - only run once ever. |
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''The Key/Legend for this table's <code>A...R6</code> values is at the [[Dry Etching Recipes#Process Ranking Table|bottom of the page]].'' |
''The Key/Legend for this table's <code>A...R6</code> values is at the [[Dry Etching Recipes#Process Ranking Table|bottom of the page]].'' |
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{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1" |
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1" |
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! colspan=" |
! colspan="15" width="725" height="45" |<div style="font-size: 150%;">Dry Etching Recipes</div> |
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|- bgcolor="#d0e7ff" |
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| bgcolor="#eaecf0" |<!-- INTENTIONALLY LEFT BLANK --> |
| bgcolor="#eaecf0" |<!-- INTENTIONALLY LEFT BLANK --> |
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! colspan=" |
! colspan="2" |'''[[RIE Etching Recipes|RIE Etching]]''' |
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! colspan=" |
! colspan="5" |'''[[ICP Etching Recipes|ICP Etching]]''' |
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! colspan="4" bgcolor="#d0e7ff" align="center" |'''[[Oxygen Plasma System Recipes|Oxygen Plasma Systems]]''' |
! colspan="4" bgcolor="#d0e7ff" align="center" |'''[[Oxygen Plasma System Recipes|Oxygen Plasma Systems]]''' |
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! colspan="3" bgcolor="#d0e7ff" align="center" |'''[[Other Dry Etching Recipes|Other Dry Etchers]]''' |
! colspan="3" bgcolor="#d0e7ff" align="center" |'''[[Other Dry Etching Recipes|Other Dry Etchers]]''' |
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! bgcolor="#d0e7ff" align="center" |'''Material''' |
! bgcolor="#d0e7ff" align="center" |'''Material''' |
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| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_2_.28MRC.29|RIE 2<br> <span style="font-size: 88%;">(MRC)</span>]] |
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_2_.28MRC.29|RIE 2<br> <span style="font-size: 88%;">(MRC)</span>]] |
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| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_3_.28MRC.29|RIE 3<br> <span style="font-size: 88%;">(MRC)</span>]] |
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| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_5_.28PlasmaTherm.29|RIE 5<br><span style="font-size: 88%;">(PlasmaTherm)</span>]] |
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_5_.28PlasmaTherm.29|RIE 5<br><span style="font-size: 88%;">(PlasmaTherm)</span>]] |
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| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29|DSEIII<br><span style="font-size: 88%;">(PlasmaTherm)</span>]] |
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29|DSEIII<br><span style="font-size: 88%;">(PlasmaTherm)</span>]] |
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| bgcolor="#daf1ff" |[[ICP Etching Recipes#ICP Etch 2 .28Panasonic E626I.29|ICP Etch 2<br><span style="font-size: 88%;">(Panasonic E626I)</span>]] |
| bgcolor="#daf1ff" |[[ICP Etching Recipes#ICP Etch 2 .28Panasonic E626I.29|ICP Etch 2<br><span style="font-size: 88%;">(Panasonic E626I)</span>]] |
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| bgcolor="#daf1ff" |[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford ICP <span style="font-size: 88%;">(PlasmaPro 100)</span>]] |
| bgcolor="#daf1ff" |[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford ICP <span style="font-size: 88%;">(PlasmaPro 100)</span>]] |
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| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP-Etch_.28Unaxis_VLR.29|ICP-Etch<br><span style="font-size: 88%;">(Unaxis VLR)</span>]] |
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| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Ashers_.28Technics_PEII.29|Ashers<br><span style="font-size: 88%;">(Technics PEII)</span>]] |
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Ashers_.28Technics_PEII.29|Ashers<br><span style="font-size: 88%;">(Technics PEII)</span>]] |
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| bgcolor="#daf1ff" |[[Oxygen Plasma System Recipes#Plasma Clean .28YES EcoClean.29|Plasma Clean <span style="font-size: 88%;">(YES EcoClean)</span>]] |
| bgcolor="#daf1ff" |[[Oxygen Plasma System Recipes#Plasma Clean .28YES EcoClean.29|Plasma Clean <span style="font-size: 88%;">(YES EcoClean)</span>]] |
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! bgcolor="#d0e7ff" align="center" |Al |
! bgcolor="#d0e7ff" align="center" |Al |
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|[[RIE Etching Recipes|R2]] |
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|[[RIE Etching Recipes|A]] |
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|{{rl|ICP Etching Recipes|Al Etch (Panasonic 1)|R1}} |
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|[[ICP Etching Recipes#Al Etch .28Panasonic 2.29|R2]] |
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|{{rl|ICP Etching Recipes|Al Etch (Panasonic 1)}} |
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|[https://wiki.nanofab.ucsb.edu/wiki/ICP_Etching_Recipes#Al_Etch_.28Panasonic_2.29 R2] |
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|[[Other Dry Etching Recipes|R3]] |
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|{{rl|Other Dry Etching Recipes|Other Dry Etch (CAIBE (Oxford Ion Mill))}} |
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! bgcolor="#d0e7ff" align="center" |Cr |
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|[[RIE Etching Recipes|R2]] |
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! bgcolor="#d0e7ff" align="center" |Ru |
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|[[ICP Etching Recipes#Ru .28Ruthenium.29 Etch .28Panasonic 2.29|R3]] |
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! bgcolor="#d0e7ff" align="center" |Si |
! bgcolor="#d0e7ff" align="center" |Si |
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|[[ICP Etching Recipes#DSEIII .28PlasmaTherm.2FDeep Silicon Etcher.29|R6]] |
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|[[ICP Etching Recipes#Si Etch Recipes (Fluorine ICP Etcher)|R6]] |
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|[[ICP Etching Recipes#Si Etching .28Fluorine ICP Etcher.29|R3]] |
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|[[Other Dry Etching Recipes|R3]] |
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|R1 |
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|{{rl|Other Dry Etching Recipes|Other Dry Etch (XeF2 Etcher)}} |
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! bgcolor="#d0e7ff" align="center" |Ta |
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! bgcolor="#d0e7ff" align="center" |Ti |
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|{{rl|ICP Etching Recipes|Ti Etch (Panasonic 1)}} |
|{{rl|ICP Etching Recipes|Ti Etch (Panasonic 1)}} |
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|R1 |
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! bgcolor="#d0e7ff" align="center" |W |
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|R3 |
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|{{rl|ICP Etching Recipes|W-TiW Etch (Panasonic 1)}} |
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|R1 |
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! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3</sub> |
! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3</sub> |
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|A |
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|[[ICP Etching Recipes#Al2O3 Etching .28Panasonic 2.29|R3]] |
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|[https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#Al2O3_Etching_.28Panasonic_2.29 R4] |
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! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3 (Sapphire)</sub> |
! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3 (Sapphire)</sub> |
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! bgcolor="#d0e7ff" align="center" |AlGaAs |
! bgcolor="#d0e7ff" align="center" |AlGaAs |
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|[[RIE Etching Recipes|R3]] |
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|{{rl|RIE Etching Recipes|AlGaAs\GaAs Etching (RIE 5)}} |
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|[[ICP Etching Recipes#GaAs Etch .28Oxford ICP Etcher.29|R3]] |
|[[ICP Etching Recipes#GaAs Etch .28Oxford ICP Etcher.29|R3]] |
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|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|GaAs-AlGaAs Etch (Unaxis VLR)|AlGaAs Etch (Unaxis VLR)}} |
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! bgcolor="#d0e7ff" align="center" |AlGaN |
! bgcolor="#d0e7ff" align="center" |AlGaN |
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|[[ICP Etching Recipes#GaN Etch .28Oxford ICP Etcher.29|R2]] |
|[[ICP Etching Recipes#GaN Etch .28Oxford ICP Etcher.29|R2]] |
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|{{rl|ICP Etching Recipes|GaN Etch (Unaxis VLR)}} |
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! bgcolor="#d0e7ff" align="center" |AlN |
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|{{rl|ICP Etching Recipes|GaN Etch (Unaxis VLR)}} |
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! bgcolor="#d0e7ff" align="center" |CdZnTe |
! bgcolor="#d0e7ff" align="center" |CdZnTe |
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|[[RIE Etching Recipes|R3]] |
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|A |
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! bgcolor="#d0e7ff" align="center" |GaAs |
! bgcolor="#d0e7ff" align="center" |GaAs |
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|[[RIE Etching Recipes|R3]] |
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|{{rl|RIE Etching Recipes|AlGaAs\GaAs Etching (RIE 5)}} |
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|{{rl|ICP Etching Recipes|GaAs-AlGaAs Etch (Panasonic 1)}} |
|{{rl|ICP Etching Recipes|GaAs-AlGaAs Etch (Panasonic 1)}} |
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|[[ICP Etching Recipes#GaAs Etch .28Panasonic 2.29|R6]] |
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|R3 |
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|[[ICP Etching Recipes#GaAs Etch .28Oxford ICP Etcher.29|R3]] |
|[[ICP Etching Recipes#GaAs Etch .28Oxford ICP Etcher.29|R3]] |
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|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|GaAs-AlGaAs Etch (Unaxis VLR)|GaAs Etch (Unaxis VLR)}} |
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|- bgcolor="#eeffff" |
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! bgcolor="#d0e7ff" align="center" |GaN |
! bgcolor="#d0e7ff" align="center" |GaN |
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|[[RIE Etching Recipes|R3]] |
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|{{rl|RIE Etching Recipes|GaN Etching (RIE 5)}} |
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|{{rl|ICP Etching Recipes|GaN Etch (Panasonic 1)}} |
|{{rl|ICP Etching Recipes|GaN Etch (Panasonic 1)}} |
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|R1 |
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|[[ICP Etching Recipes#GaN Etch .28Oxford ICP Etcher.29| |
|[[ICP Etching Recipes#GaN Etch .28Oxford ICP Etcher.29|R6]] |
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|{{rl|ICP Etching Recipes|GaN Etch (Unaxis VLR)}} |
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! bgcolor="#d0e7ff" align="center" |GaSb |
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|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|GaSb Etch Unaxis VLR)}} |
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! bgcolor="#d0e7ff" align="center" |HfO<sub>2</sub> |
! bgcolor="#d0e7ff" align="center" |HfO<sub>2</sub> |
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|A |
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! bgcolor="#d0e7ff" align="center" |InGaAlAs |
! bgcolor="#d0e7ff" align="center" |InGaAlAs |
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|[[RIE Etching Recipes|R3]] |
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|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|InP-InGaAs-InAlAs Etch (Unaxis VLR)|InP Etch (Unaxis VLR)}} |
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|- bgcolor="#eeffff" |
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! bgcolor="#d0e7ff" align="center" |InGaAsP |
! bgcolor="#d0e7ff" align="center" |InGaAsP |
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|[[RIE Etching Recipes|R3]] |
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|[[ICP Etching Recipes#InP Ridge Etch .28Oxford ICP Etcher.29|R3]] |
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|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_and_ARC_Etching_.28Panasonic_1.29 R3] |
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! bgcolor="#d0e7ff" align="center" |'''Material''' |
! bgcolor="#d0e7ff" align="center" |'''Material''' |
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| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_2_.28MRC.29|RIE 2<br> <span style="font-size: 88%;">(MRC)</span>]] |
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_2_.28MRC.29|RIE 2<br> <span style="font-size: 88%;">(MRC)</span>]] |
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| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_5_.28PlasmaTherm.29|RIE 5<br><span style="font-size: 88%;">(PlasmaTherm)</span>]] |
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| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29|DSEIII<br><span style="font-size: 88%;">(PlasmaTherm)</span>]] |
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29|DSEIII<br><span style="font-size: 88%;">(PlasmaTherm)</span>]] |
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| bgcolor="#daf1ff" |[[ICP Etching Recipes#ICP Etch 2 .28Panasonic E626I.29|ICP Etch 2<br><span style="font-size: 88%;">(Panasonic E640)</span>]] |
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| bgcolor="#daf1ff" |[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford ICP <span style="font-size: 88%;">(PlasmaPro 100)</span>]] |
| bgcolor="#daf1ff" |[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford ICP <span style="font-size: 88%;">(PlasmaPro 100)</span>]] |
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| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP-Etch_.28Unaxis_VLR.29|ICP-Etch<br><span style="font-size: 88%;">(Unaxis VLR)</span>]] |
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| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Ashers_.28Technics_PEII.29|Ashers<br><span style="font-size: 88%;">(Technics PEII)</span>]] |
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Ashers_.28Technics_PEII.29|Ashers<br><span style="font-size: 88%;">(Technics PEII)</span>]] |
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| bgcolor="#daf1ff" |[[Oxygen Plasma System Recipes#Plasma Clean .28YES EcoClean.29|Plasma Clean <span style="font-size: 88%;">(YES EcoClean)</span>]] |
| bgcolor="#daf1ff" |[[Oxygen Plasma System Recipes#Plasma Clean .28YES EcoClean.29|Plasma Clean <span style="font-size: 88%;">(YES EcoClean)</span>]] |
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=== |
===Process Ranking Table=== |
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Processes in the table above are ranked by their "''Process Maturity Level''" as follows: |
Processes in the table above are ranked by their "''Process Maturity Level''" as follows: |
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{| class="wikitable" |
{| class="wikitable" |
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| colspan="11" |Process has been |
| colspan="11" |Process has been ran at least once |
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|R2 |
|R2 |
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| colspan="11" |Process has been |
| colspan="11" |Process has been ran and procedure is documented |
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|R3 |
|R3 |
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| colspan="11" |Process has been |
| colspan="11" |Process has been ran, procedure is documented, and data is available |
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|R4 |
|R4 |
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| colspan="11" |Process has a documented procedure with regular |
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''no''' in-Situ control available |
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|R5 |
|R5 |
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| colspan="11" |Process has a documented procedure with regular |
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' in-Situ control available |
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|R6 |
|R6 |
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| colspan="11" |Process has a documented procedure |
| colspan="11" |Process has a documented procedure and control charts/limits available. Controlled process. |
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[[Category:Processing]] |
[[Category:Processing]] |
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Latest revision as of 20:00, 22 August 2025
Process Control Data
See above linked page for process control data (dep rate/stress etc. over time), for a selection of often-used dry etches
Dry Etching Tools/Materials Table
Process Maturity Ranking
R6- most mature process with regular calibrations recorded on SPC charts.- …
R1- least mature - only run once ever.
The Key/Legend for this table's A...R6 values is at the bottom of the page.
Process Ranking Table
Processes in the table above are ranked by their "Process Maturity Level" as follows:
| Process Level | Description of Process Level Ranking | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| A | Process Allowed and materials available but never done | ||||||||||
| R1 | Process has been ran at least once | ||||||||||
| R2 | Process has been ran and procedure is documented | ||||||||||
| R3 | Process has been ran, procedure is documented, and data is available | ||||||||||
| R4 | Process has a documented procedure with regular (≥4x per year) data no in-Situ control available | ||||||||||
| R5 | Process has a documented procedure with regular (≥4x per year) data and in-Situ control available | ||||||||||
| R6 | Process has a documented procedure and control charts/limits available. Controlled process. | ||||||||||