Dry Etching Recipes: Difference between revisions

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(Include "organics" for surface treatment)
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===<u>R3[[Process Group - Process Control Data#Etching .28Process Control Data.29|Process Control Data]]</u>===
===<u>[[Process Group - Process Control Data#Etching .28Process Control Data.29|Process Control Data]]</u>===
<small>''See above [[Process Group - Process Control Data#Etching .28Process Control Data.29|linked page]] for [https://en.wikipedia.org/wiki/Statistical_process_control process control data] (dep rate/stress etc. over time), for a selection of often-used dry etches''</small>
<small>''See above [[Process Group - Process Control Data#Etching .28Process Control Data.29|linked page]] for [https://en.wikipedia.org/wiki/Statistical_process_control process control data] (dep rate/stress etc. over time), for a selection of often-used dry etches''</small>


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! bgcolor="#d0e7ff" align="center" |Ru
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|[https://wiki.nanofab.ucsb.edu/wiki/ICP_Etching_Recipes#Ru_.28Ruthenium.29_Etch_.28Panasonic_2.29 R3]
|[[ICP Etching Recipes#Ru .28Ruthenium.29 Etch .28Panasonic 2.29|R3]]
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|[[RIE Etching Recipes|R4]]
|[[ICP Etching Recipes#DSEIII .28PlasmaTherm.2FDeep Silicon Etcher.29|R6]]
|[[ICP Etching Recipes#Si Etching .28Fluorine ICP Etcher.29|R5]]
|[[ICP Etching Recipes#Si Etching .28Fluorine ICP Etcher.29|R6]]
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! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3</sub>
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|[[ICP Etching Recipes#Al2O3 Etching .28Panasonic 2.29|R3]]
|[https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#Al2O3_Etching_.28Panasonic_2.29 R3]
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|{{rl|ICP Etching Recipes|GaAs-AlGaAs Etch (Panasonic 1)}}
|[[ICP Etching Recipes#GaAs Etch .28Panasonic 2.29|R3]]
|[https://wiki.nanofab.ucsb.edu/wiki/ICP_Etching_Recipes#GaAs_Etch_.28Panasonic_2.29 R3]
|[[ICP Etching Recipes#GaAs Etch .28Oxford ICP Etcher.29|R3]]
|[[ICP Etching Recipes#GaAs Etch .28Oxford ICP Etcher.29|R2]]
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|{{rl|ICP Etching Recipes|GaN Etch (Panasonic 1)}}
|{{rl|ICP Etching Recipes|GaN Etch (Panasonic 1)}}
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|[[ICP Etching Recipes#GaN Etch .28Oxford ICP Etcher.29|R2]]
|[[ICP Etching Recipes#GaN Etch .28Oxford ICP Etcher.29|R6]]
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!Photoresist
!Photoresist & Organics
& ARC & Organics
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|[[RIE Etching Recipes|R3]]
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|[[ICP Etching Recipes#Photoresist .26 ARC .28Fluorine ICP Etcher.29|R3]]
|[[ICP Etching Recipes#Photoresist .26 ARC .28Fluorine ICP Etcher.29|R3]]
|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_and_ARC_Etching_.28Panasonic_1.29 R]
|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_and_ARC_Etching_.28Panasonic_1.29 R]
|[[ICP Etching Recipes#Al2O3 Etching .28Panasonic 2.29|R3]]
|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_and_ARC_etching_.28Panasonic_2.29 R3]
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|[[Oxygen Plasma System Recipes#O2 Ashing|R3]]
|[[Oxygen Plasma System Recipes#O2 Ashing|R3]]
|[[Oxygen Plasma System Recipes#O2 Ashing|R3]]
|[[Oxygen Plasma System Recipes#O2 Ashing|R3]]
|[[Oxygen Plasma System Recipes#O2 Ashing|R3]]
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|[[ICP Etching Recipes#Si3N4 Etching .28Fluorine ICP Etcher.29|R3]]
|[[ICP Etching Recipes#Si3N4 Etching .28Fluorine ICP Etcher.29|R3]]
|{{rl|ICP Etching Recipes|SiNx Etching (Panasonic 1)}}
|{{rl|ICP Etching Recipes|SiNx Etching (Panasonic 1)}}
|[[ICP Etching Recipes#SiNx Etching .28Panasonic 2.29|R3]]
|[https://wiki.nanofab.ucsb.edu/wiki/ICP_Etching_Recipes#SiNx_Etching_.28Panasonic_2.29 R3]
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|[[Oxygen Plasma System Recipes#O2 Ashing|R3]]
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|[[ICP Etching Recipes#SiO2 Etching .28Fluorine ICP Etcher.29|R6]]
|[[ICP Etching Recipes#SiO2 Etching .28Fluorine ICP Etcher.29|R6]]
|{{rl|ICP Etching Recipes|SiO2 Etching (Panasonic 1)}}
|{{rl|ICP Etching Recipes|SiO2 Etching (Panasonic 1)}}
|[[ICP Etching Recipes#SiO2 Etching .28Panasonic 2.29|R6]]
|[https://wiki.nanofab.ucsb.edu/wiki/ICP_Etching_Recipes#SiO2_Etching_.28Panasonic_2.29 R6]
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! bgcolor="#d0e7ff" align="center" |'''Material'''
! bgcolor="#d0e7ff" align="center" |'''Material'''

Latest revision as of 20:48, 27 November 2024

Process Control Data

See above linked page for process control data (dep rate/stress etc. over time), for a selection of often-used dry etches

Dry Etching Tools/Materials Table

The Key/Legend for this table's A...R6 values is at the bottom of the page.

Dry Etching Recipes
RIE Etching ICP Etching Oxygen Plasma Systems Other Dry Etchers
Material RIE 2
(MRC) 		RIE 5
(PlasmaTherm) 		DSEIII
(PlasmaTherm) 		Fluorine ICP (PlasmaTherm) ICP Etch 1
(Panasonic E646V) 		ICP Etch 2
(Panasonic E626I) 		Oxford ICP (PlasmaPro 100) Ashers
(Technics PEII) 		Plasma Clean (YES EcoClean) UV Ozone Reactor Plasma Activation
(EVG 810) 		XeF2 Etch
(Xetch) 		Vapor HF Etch
(uETCH) 		CAIBE
(Oxford)
Ag R1
Al R2 R1 R2 R1
Au R4
Cr R2 R1 R1 R1
Cu R1
Ge A R1 R2 R1
Mo R1
Nb A R1
Ni R4
Os A R1
Pt R4
Ru A R3 R1
Si R6 R6 R1 R4 R1
Ta A R1 R1
Ti R1 R1 R1
W R2 R1 R1 R1
TiW R2 R1
Al2O3 A R3 R1
Al2O3 (Sapphire) R1 R1 R1
AlGaAs R3 R1 R3 R1
AlGaN R2 R1
AlN R1
BCB A
CdZnTe R3 R1
GaAs R4 R1 R3 R2 R1
GaN R4 R1 R1 R6 R1
GaSb A R1 R1 R1
HfO2 R1
InGaAlAs R4 R1 R1
InGaAsP R4 R3 R1
InP R4 A R1 R6 R4
ITO R4 R1
LiNbO3 R1
Photoresist & Organics R3 R3 R R3 R3 R3 R3 R1
ARC (Anti Reflective Coating) R3
SiC R1 R1 R1
SiN R3 R1 R3 R3 R1
SiO2 R6 R1 R6 R4 R1
SiOxNy A R1 R1
SU8 A
Ta2O5 A R1 R1
TiN R1
TiO2 R1
ZnO2 R1
ZnS R3 R1
ZnSe R2 R1
ZrO2 R1
Material RIE 2
(MRC) 		RIE 5
(PlasmaTherm) 		DSEIII
(PlasmaTherm) 		Fluorine ICP (PlasmaTherm) ICP Etch 1
(Panasonic E626I) 		ICP Etch 2
(Panasonic E640) 		Oxford ICP (PlasmaPro 100) Ashers
(Technics PEII) 		Plasma Clean (YES EcoClean) UV Ozone Reactor Plasma Activation
(EVG 810) 		XeF2 Etch
(Xetch) 		Vapor HF Etch
(uETCH) 		CAIBE
(Oxford)

Process Ranking Table

Processes in the table above are ranked by their "Process Maturity Level" as follows:

Process Level Description of Process Level Ranking
A Process Allowed and materials available but never done
R1 Process has been run at least once
R2 Process has been run and/or procedure is documented or/and data available
R3 Process has been run, procedure is documented, and data is available
R4 Process has a documented procedure with regular (≥4x per year) data or lookahead/in-situ control available
R5 Process has a documented procedure with regular (≥4x per year) data and lookahead/in-situ control available
R6 Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available
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