Dry Etching Recipes: Difference between revisions
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|{{rl|ICP Etching Recipes|Al Etch (Panasonic 1)}} |
|{{rl|ICP Etching Recipes|Al Etch (Panasonic 1)|R1}} |
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|[https://wiki.nanofab.ucsb.edu/wiki/ICP_Etching_Recipes#Al_Etch_.28Panasonic_2.29 R2] |
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|[[ICP Etching Recipes#Ru .28Ruthenium.29 Etch .28Panasonic 2.29|R3]] |
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|[[ICP Etching Recipes#DSEIII .28PlasmaTherm.2FDeep Silicon Etcher.29|R6]] |
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|[[ICP Etching Recipes#Si Etching .28Fluorine ICP Etcher.29| |
|[[ICP Etching Recipes#Si Etching .28Fluorine ICP Etcher.29|R6]] |
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|{{rl|ICP Etching Recipes|W-TiW Etch (Panasonic 1)}} |
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! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3</sub> |
! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3</sub> |
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|[[ICP Etching Recipes#Al2O3 Etching .28Panasonic 2.29|R3]] |
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|[https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#Al2O3_Etching_.28Panasonic_2.29 R3] |
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|{{rl|ICP Etching Recipes|GaAs-AlGaAs Etch (Panasonic 1)}} |
|{{rl|ICP Etching Recipes|GaAs-AlGaAs Etch (Panasonic 1)}} |
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|[[ICP Etching Recipes#GaAs Etch .28Panasonic 2.29|R3]] |
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|[https://wiki.nanofab.ucsb.edu/wiki/ICP_Etching_Recipes#GaAs_Etch_.28Panasonic_2.29 R3] |
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|[[ICP Etching Recipes#GaAs Etch .28Oxford ICP Etcher.29| |
|[[ICP Etching Recipes#GaAs Etch .28Oxford ICP Etcher.29|R2]] |
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|{{rl|ICP Etching Recipes|GaN Etch (Panasonic 1)}} |
|{{rl|ICP Etching Recipes|GaN Etch (Panasonic 1)}} |
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|[[ICP Etching Recipes#GaN Etch .28Oxford ICP Etcher.29| |
|[[ICP Etching Recipes#GaN Etch .28Oxford ICP Etcher.29|R6]] |
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!Photoresist |
!Photoresist & Organics |
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& ARC & Organics |
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|[[RIE Etching Recipes|R3]] |
|[[RIE Etching Recipes|R3]] |
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|[[ICP Etching Recipes#Photoresist .26 ARC .28Fluorine ICP Etcher.29|R3]] |
|[[ICP Etching Recipes#Photoresist .26 ARC .28Fluorine ICP Etcher.29|R3]] |
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|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_and_ARC_Etching_.28Panasonic_1.29 R] |
|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_and_ARC_Etching_.28Panasonic_1.29 R] |
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|[[ICP Etching Recipes#Al2O3 Etching .28Panasonic 2.29|R3]] |
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|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_and_ARC_etching_.28Panasonic_2.29 R3] |
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!ARC (Anti Reflective Coating) |
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|[[ICP Etching Recipes#Photoresist .26 ARC .28Fluorine ICP Etcher.29|R3]] |
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! bgcolor="#d0e7ff" align="center" |SiC |
! bgcolor="#d0e7ff" align="center" |SiC |
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|[[ICP Etching Recipes#Si3N4 Etching .28Fluorine ICP Etcher.29|R3]] |
|[[ICP Etching Recipes#Si3N4 Etching .28Fluorine ICP Etcher.29|R3]] |
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|{{rl|ICP Etching Recipes|SiNx Etching (Panasonic 1)}} |
|{{rl|ICP Etching Recipes|SiNx Etching (Panasonic 1)}} |
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|[[ICP Etching Recipes#SiNx Etching .28Panasonic 2.29|R3]] |
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|[https://wiki.nanofab.ucsb.edu/wiki/ICP_Etching_Recipes#SiNx_Etching_.28Panasonic_2.29 R3] |
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|[[Oxygen Plasma System Recipes#O2 Ashing|R3]] |
|[[Oxygen Plasma System Recipes#O2 Ashing|R3]] |
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|[[ICP Etching Recipes#SiO2 Etching .28Fluorine ICP Etcher.29|R6]] |
|[[ICP Etching Recipes#SiO2 Etching .28Fluorine ICP Etcher.29|R6]] |
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|{{rl|ICP Etching Recipes|SiO2 Etching (Panasonic 1)}} |
|{{rl|ICP Etching Recipes|SiO2 Etching (Panasonic 1)}} |
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|[[ICP Etching Recipes#SiO2 Etching .28Panasonic 2.29|R6]] |
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|[https://wiki.nanofab.ucsb.edu/wiki/ICP_Etching_Recipes#SiO2_Etching_.28Panasonic_2.29 R6] |
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|R1 |
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|[https://www.osapublishing.org/optica/abstract.cfm?uri=optica-4-5-532 R1] |
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Latest revision as of 20:48, 27 November 2024
Process Control Data
See above linked page for process control data (dep rate/stress etc. over time), for a selection of often-used dry etches
Dry Etching Tools/Materials Table
The Key/Legend for this table's A...R6
values is at the bottom of the page.
Process Ranking Table
Processes in the table above are ranked by their "Process Maturity Level" as follows:
Process Level | Description of Process Level Ranking | ||||||||||
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A | Process Allowed and materials available but never done | ||||||||||
R1 | Process has been run at least once | ||||||||||
R2 | Process has been run and/or procedure is documented or/and data available | ||||||||||
R3 | Process has been run, procedure is documented, and data is available | ||||||||||
R4 | Process has a documented procedure with regular (≥4x per year) data or lookahead/in-situ control available | ||||||||||
R5 | Process has a documented procedure with regular (≥4x per year) data and lookahead/in-situ control available | ||||||||||
R6 | Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available |