Dry Etching Recipes: Difference between revisions

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===Dry Etching Tools/Materials Table===
===Dry Etching Tools/Materials Table===

==== Process Maturity Ranking ====

* <code>'''R6'''</code> - most mature process with regular calibrations recorded on SPC charts.
* …
* <code>'''R1'''</code> - least mature - only run once ever.

''The Key/Legend for this table's <code>A...R6</code> values is at the [[Dry Etching Recipes#Process Ranking Table|bottom of the page]].''
''The Key/Legend for this table's <code>A...R6</code> values is at the [[Dry Etching Recipes#Process Ranking Table|bottom of the page]].''
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
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| bgcolor="#daf1ff" |[[ICP Etching Recipes#PlasmaTherm.2FSLR Fluorine Etcher|Fluorine ICP <span style="font-size: 88%;">(PlasmaTherm)</span>]]
| bgcolor="#daf1ff" |[[ICP Etching Recipes#PlasmaTherm.2FSLR Fluorine Etcher|Fluorine ICP <span style="font-size: 88%;">(PlasmaTherm)</span>]]
| bgcolor="#daf1ff" |[[ICP Etching Recipes#ICP Etch 1 .28Panasonic E646V.29|ICP Etch 1<br><span style="font-size: 88%;">(Panasonic E646V)</span>]]
| bgcolor="#daf1ff" |[[ICP Etching Recipes#ICP Etch 1 .28Panasonic E646V.29|ICP Etch 1<br><span style="font-size: 88%;">(Panasonic E646V)</span>]]
| bgcolor="#daf1ff" |[[R3|ICP Etch 2<br><span style="font-size: 88%;">(Panasonic E626I)</span>]]
| bgcolor="#daf1ff" |[[ICP Etching Recipes#ICP Etch 2 .28Panasonic E626I.29|ICP Etch 2<br><span style="font-size: 88%;">(Panasonic E626I)</span>]]
| bgcolor="#daf1ff" |[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford ICP <span style="font-size: 88%;">(PlasmaPro 100)</span>]]
| bgcolor="#daf1ff" |[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford ICP <span style="font-size: 88%;">(PlasmaPro 100)</span>]]
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Ashers_.28Technics_PEII.29|Ashers<br><span style="font-size: 88%;">(Technics PEII)</span>]]
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Ashers_.28Technics_PEII.29|Ashers<br><span style="font-size: 88%;">(Technics PEII)</span>]]
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|{{rl|ICP Etching Recipes|Al Etch (Panasonic 1)}}
|{{rl|ICP Etching Recipes|Al Etch (Panasonic 1)|R1}}
|[[ICP Etching Recipes#Al Etch .28Panasonic 2.29|R2]]
|[[ICP Etching Recipes#Al Etch .28Panasonic 2.29|R2]]
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|[[RIE Etching Recipes|R4]]
|[[ICP Etching Recipes#DSEIII .28PlasmaTherm.2FDeep Silicon Etcher.29|R6]]
|[[ICP Etching Recipes#Si Etching .28Fluorine ICP Etcher.29|R5]]
|[[ICP Etching Recipes#Si Etch Recipes (Fluorine ICP Etcher)|R6]]
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|{{rl|ICP Etching Recipes|GaAs-AlGaAs Etch (Panasonic 1)}}
|{{rl|ICP Etching Recipes|GaAs-AlGaAs Etch (Panasonic 1)}}
|[[ICP Etching Recipes#GaAs Etch .28Panasonic 2.29|R3]]
|[[ICP Etching Recipes#GaAs Etch .28Panasonic 2.29|R6]]
|[[ICP Etching Recipes#GaAs Etch .28Oxford ICP Etcher.29|R3]]
|[[ICP Etching Recipes#GaAs Etch .28Oxford ICP Etcher.29|R2]]
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|{{rl|ICP Etching Recipes|GaN Etch (Panasonic 1)}}
|{{rl|ICP Etching Recipes|GaN Etch (Panasonic 1)}}
|R1
|R1
|[[ICP Etching Recipes#GaN Etch .28Oxford ICP Etcher.29|R2]]
|[[ICP Etching Recipes#GaN Etch .28Oxford ICP Etcher.29|R6]]
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|[[ICP Etching Recipes#SiO2 Etching .28Fluorine ICP Etcher.29|R6]]
|[[ICP Etching Recipes#SiO2 Etch Recipes (Fluorine ICP Etcher)|R6]]
|{{rl|ICP Etching Recipes|SiO2 Etching (Panasonic 1)}}
|{{rl|ICP Etching Recipes|SiO2 Etching (Panasonic 1)}}
|[[ICP Etching Recipes#SiO2 Etching .28Panasonic 2.29|R6]]
|[[ICP Etching Recipes#SiO2 Etching .28Panasonic 2.29|R6]]
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|A
|A
|R1
|[Https://www.osapublishing.org/optica/abstract.cfm%3Furi%3Doptica-4-5-532 R1]
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==='''Process Ranking Table'''===
===Process Ranking Table===
Processes in the table above are ranked by their "''Process Maturity Level''" as follows:
Processes in the table above are ranked by their "''Process Maturity Level''" as follows:
{| class="wikitable"
{| class="wikitable"

Latest revision as of 23:32, 6 August 2025

Process Control Data

See above linked page for process control data (dep rate/stress etc. over time), for a selection of often-used dry etches

Dry Etching Tools/Materials Table

Process Maturity Ranking

  • R6 - most mature process with regular calibrations recorded on SPC charts.
  • …
  • R1 - least mature - only run once ever.

The Key/Legend for this table's A...R6 values is at the bottom of the page.

Dry Etching Recipes
RIE Etching ICP Etching Oxygen Plasma Systems Other Dry Etchers
Material RIE 2
(MRC) 		RIE 5
(PlasmaTherm) 		DSEIII
(PlasmaTherm) 		Fluorine ICP (PlasmaTherm) ICP Etch 1
(Panasonic E646V) 		ICP Etch 2
(Panasonic E626I) 		Oxford ICP (PlasmaPro 100) Ashers
(Technics PEII) 		Plasma Clean (YES EcoClean) UV Ozone Reactor Plasma Activation
(EVG 810) 		XeF2 Etch
(Xetch) 		Vapor HF Etch
(uETCH) 		CAIBE
(Oxford)
Ag R1
Al R2 R1 R2 R1
Au R4
Cr R2 R1 R1 R1
Cu R1
Ge A R1 R2 R1
Mo R1
Nb A R1
Ni R4
Os A R1
Pt R4
Ru A R3 R1
Si R6 R6 R1 R4 R1
Ta A R1 R1
Ti R1 R1 R1
W R2 R1 R1 R1
TiW R2 R1
Al2O3 A R3 R1
Al2O3 (Sapphire) R1 R1 R1
AlGaAs R3 R1 R3 R1
AlGaN R2 R1
AlN R1
BCB A
CdZnTe R3 R1
GaAs R4 R1 R6 R2 R1
GaN R4 R1 R1 R6 R1
GaSb A R1 R1 R1
HfO2 R1
InGaAlAs R4 R1 R1
InGaAsP R4 R3 R1
InP R4 A R1 R6 R4
ITO R4 R1
LiNbO3 R1
Photoresist & Organics R3 R3 R R3 R3 R3 R3 R1
ARC (Anti Reflective Coating) R3
SiC R1 R1 R1
SiN R3 R1 R3 R3 R1
SiO2 R6 R1 R6 R4 R1
SiOxNy A R1 R1
SU8 A
Ta2O5 A R1 R1
TiN R1
TiO2 R1
ZnO2 R1
ZnS R3 R1
ZnSe R2 R1
ZrO2 R1
Material RIE 2
(MRC) 		RIE 5
(PlasmaTherm) 		DSEIII
(PlasmaTherm) 		Fluorine ICP (PlasmaTherm) ICP Etch 1
(Panasonic E626I) 		ICP Etch 2
(Panasonic E640) 		Oxford ICP (PlasmaPro 100) Ashers
(Technics PEII) 		Plasma Clean (YES EcoClean) UV Ozone Reactor Plasma Activation
(EVG 810) 		XeF2 Etch
(Xetch) 		Vapor HF Etch
(uETCH) 		CAIBE
(Oxford)

Process Ranking Table

Processes in the table above are ranked by their "Process Maturity Level" as follows:

Process Level Description of Process Level Ranking
A Process Allowed and materials available but never done
R1 Process has been run at least once
R2 Process has been run and/or procedure is documented or/and data available
R3 Process has been run, procedure is documented, and data is available
R4 Process has a documented procedure with regular (≥4x per year) data or lookahead/in-situ control available
R5 Process has a documented procedure with regular (≥4x per year) data and lookahead/in-situ control available
R6 Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available
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