Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer): Difference between revisions

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|0.74
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|[https://www.nanotech.ucsb.edu/wiki/index.php/File:SiO2_Etch_using_ICP2_with_O2.pdf]
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|1/28/2019

Revision as of 17:22, 31 January 2019

ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
10/5/2018 SiO2#01 95.2 0.74 77.9 [1]
1/28/2019 I21902 92.1 0.77 [2]
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