PECVD1 Recipes: Difference between revisions
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*Deposition rate~11.30nm/min (users must calibrate this prior to critical deps) |
*Deposition rate~11.30nm/min (users must calibrate this prior to critical deps) |
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*HF e.r.~ |
*HF e.r.~90nm/min |
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*Stress~ |
*Stress~444MPa |
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*Refractive Index~1. |
*Refractive Index~1.940 |
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== SiO<sub>2</sub> deposition (PECVD #1) == |
== SiO<sub>2</sub> deposition (PECVD #1) == |
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Revision as of 18:19, 16 September 2014
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
- SiN Standard Recipe
- SiN Data September 2014
- SiN 1000A Thickness uniformity 2014
- Low Stress Si3N4 - Variable Stress Recipes
- Low Stress Si3N4 - Variable Stress Plot
- Deposition rate~11.30nm/min (users must calibrate this prior to critical deps)
- HF e.r.~90nm/min
- Stress~444MPa
- Refractive Index~1.940
SiO2 deposition (PECVD #1)
- Deposition rate~35.41nm/min (users must calibrate this prior to critical deps)
- HF e.r.~669nm/min
- Stress~-414MPa
- Refractive Index~1.460