PECVD1 Recipes: Difference between revisions
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*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiO<sub>x</sub>N<sub>y</sub> Data September 2014] |
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEw0bjFEdTF2SUhRa25Ca0d0SzBha3c&usp=drive_web#gid=sharing SiO<sub>x</sub>N<sub>y</sub> Data September 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEw0bjFEdTF2SUhRa25Ca0d0SzBha3c&usp=drive_web#gid=sharing SiO<sub>x</sub>N<sub>y</sub> Data September 2014] |
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub> 3000A Thickness uniformity 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub> 3000A Thickness uniformity 2014] |
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Revision as of 19:36, 16 September 2014
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
- SiN Standard Recipe
- SiN Data September 2014
- SiN 1000A Thickness uniformity 2014
- Low Stress Si3N4 - Variable Stress Recipes
- Low Stress Si3N4 - Variable Stress Plot
- Deposition rate~11.30nm/min (users must calibrate this prior to critical deps)
- HF e.r.~90nm/min
- Stress~444MPa
- Refractive Index~1.940
SiO2 deposition (PECVD #1)
- Deposition rate~35.22nm/min (users must calibrate this prior to critical deps)
- HF e.r.~646nm/min
- Stress~-407MPa
- Refractive Index~1.460
SiOxNy deposition (PECVD #1)
- [[media:|SiOxNy Standard Recipe]]
- Deposition rate~14.50nm/min (users must calibrate this prior to critical deps)
- HF e.r.~399nm/min
- Stress~145MPa
- Refractive Index~1.714