OLD - PECVD2 Recipes: Difference between revisions

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=[[PECVD 2 (Advanced Vacuum)]]=
=[[PECVD 2 (Advanced Vacuum)]]=

==Photos==

*[[media: Dirty platen photos.pdf|Maintenance]]
== SiN deposition (PECVD #2) ==
== SiN deposition (PECVD #2) ==
*[[media:New Advanced PECVD-Nitride2 300C standard recipe.pdf|Nitride2 Standard Recipe]]
*[[media:New Advanced PECVD-Nitride2 300C standard recipe.pdf|Nitride2 Standard Recipe]]

Revision as of 22:02, 17 October 2014

PECVD 2 (Advanced Vacuum)

Photos

SiN deposition (PECVD #2)

  • Deposition Rate: ≈ 7.99 nm/min (users must calibrate this prior to critical deps)
  • Refractive Index: ≈ 1.958
  • Stress ≈ 495MPa
  • HF etch rate:~49nm/min

SiO2 deposition (PECVD #2)

  • Deposition Rate: ≈ 28.50 nm/min (users must calibrate this prior to critical deps)
  • Refractive Index: ≈ 1.474
  • Stress ≈ -259MPa
  • HF etch rate~626nm/min

LS SiN deposition (PECVD #2)

  • Deposition Rate: ≈ 7.96 nm/min (users must calibrate this prior to critical deps)
  • Refractive Index: ≈ 1.937
  • Stress ≈ 2.77MPa
  • HF etch rate~47nm/min

Amorphous-Si deposition (PECVD #2)