OLD - PECVD2 Recipes: Difference between revisions
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== SiN deposition (PECVD #2) == |
== SiN deposition (PECVD #2) == |
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*[[media:New Advanced PECVD-Nitride2 300C standard recipe.pdf|Nitride2 Standard Recipe]] |
*[[media:New Advanced PECVD-Nitride2 300C standard recipe.pdf|Nitride2 Standard Recipe]] |
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDE0R3FlenNPa2txNmRldTczMXZNNnc#gid=sharing Nitride2 Data |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDE0R3FlenNPa2txNmRldTczMXZNNnc#gid=sharing Nitride2 Data 2014] |
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dERkYm85bGtYQVpjVk5GTGJuMkg2anc&usp=drive_web#gid=sharing Nitride2 Thickness uniformity 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dERkYm85bGtYQVpjVk5GTGJuMkg2anc&usp=drive_web#gid=sharing Nitride2 Thickness uniformity 2014] |
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*Deposition Rate: ≈ 7.93 nm/min (users must calibrate this prior to critical deps) |
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*Refractive Index: ≈ 1.961 |
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*Stress ≈ 495MPa |
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*HF etch rate:~49nm/min |
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== SiO<sub>2</sub> deposition (PECVD #2) == |
== SiO<sub>2</sub> deposition (PECVD #2) == |
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Revision as of 17:54, 11 December 2014
PECVD 2 (Advanced Vacuum)
Photos
SiN deposition (PECVD #2)
SiO2 deposition (PECVD #2)
LS SiN deposition (PECVD #2)
- Deposition Rate: ≈ 7.87 nm/min (users must calibrate this prior to critical deps)
- Refractive Index: ≈ 1.938
- Stress ≈ 1.76MPa
- HF etch rate~47nm/min