PECVD Recipes: Difference between revisions
Jump to navigation
Jump to search
Line 60: | Line 60: | ||
{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" |
{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" |
||
|- bgcolor="#D0E7FF" |
|- bgcolor="#D0E7FF" |
||
!width=350 align=center|50° |
!width=350 align=center|50° (pinholes) |
||
!width=350 align=center|100° |
!width=350 align=center|100° (pinholes) |
||
!width=350 align=center|250° |
!width=350 align=center|250° |
||
|-align=left |
|-align=left |
Revision as of 22:52, 11 December 2015
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
- SiN Standard Recipe
- SiN Data 2014
- SiN Data 2015
- SiN 1000A Thickness uniformity 2014
- SiN 1000A Thickness uniformity 2015
SiO2 deposition (PECVD #1)
- SiO2 Standard Recipe
- SiO2 Data 2014
- SiO2 Data 2015
- SiO2 1000A Thickness uniformity 2014
- SiO2 1000A Thickness uniformity 2015
SiOxNy deposition (PECVD #1)
PECVD 2 (Advanced Vacuum)
SiO2 deposition (PECVD #2)
- Oxide Standard Recipe
- Oxide Data 2014
- Oxide Data 2015
- Oxide Thickness Uniformity 2014
- Oxide Thickness Uniformity 2015
SiN deposition (PECVD #2)
- Nitride2 Standard Recipe
- Nitride2 Data 2014
- Nitride2 Data 2015
- Nitride2 Thickness Uniformity 2014
- Nitride2 Thickness Uniformity 2015
LS SiN deposition (PECVD #2)
- LS Nitride2 Standard Recipe
- LS Nitride2 Data 2014
- LS Nitride2 data 2015
- LS Nitride2 Thickness Uniformity 2014
- LS Nitride2 Thickness Uniformity 2015
Amorphous-Si deposition (PECVD #2)
ICP-PECVD (Unaxis VLR)
SiN deposition (Unaxis VLR)
SiN (2% SiH4)
SiN (2% SiH4 - No-Ar)
SiN (2% SiH4 - No-Ar - Extra N2)
50° | 100° | 250° |
---|---|---|
SiN (100% SiH4 )
50° | 100° | 250° |
---|---|---|
SiO2 deposition (Unaxis VLR)
SiO2 (2% SiH4)
50° | 100° | 250° |
---|---|---|
SiO2 (2% SiH4 - No Ar)
50° | 100° | 250° |
---|---|---|
SiO2 (100% SiH4 HDR)
50° | 100° | 250° |
---|---|---|
SiO2 (100% SiH4 LDR)
50° | 100° | 250° |
---|---|---|
Amorphous Si (100%SiH4 Ar He)
90° | 250° |
---|---|