Dry Etching Recipes: Difference between revisions

Revision as of 21:16, 22 September 2017

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Dry Etching Recipes
	RIE Etching				ICP Etching				Oxygen Plasma Systems				Other Dry Etchers
Material	RIE 1 (Retired)	RIE 2 (MRC)	RIE 3 (MRC)	RIE 5 (PlasmaTherm)	Si Deep RIE (PTI/Bosch)	ICP Etch 1 (Panasonic 1)	ICP Etch 2 (Panasonic 2)	ICP-Etch (Unaxis VLR)	Ashers (Technics PEII)	Plasma Clean (Gasonics 2000)	UV Ozone Reactor	Plasma Activation (EVG 810)	XeF2 Etch (Xetch)	Vapor HF Etch (uETCH)	CAIBE (Oxford)
Ag
Al				A		R1	R1
Au															R1
Cr				A		R1	A
Cu
Ge
Mo
Ni															R1
Pt															R1
Ru
Si					R1								R1
Ta
Ti						R1	A
Al₂O₃
Al₂O_{3 (Sapphire)}						R1	A
AlGaAs				R1		R1		GaAs-AlGaAs Etch (Unaxis VLR)
AlGaN								R1
AlN								R1
CdZnTe		R1
GaAs				R1		R1	R1	GaAs-AlGaAs Etch (Unaxis VLR)
GaN				GaN Etch (RIE 5)		R1		R1
GaSb								GaSb Etch Unaxis VLR)
HfO₂
InGaAlAs		InP-InGaAsP-InGaAlAs Etching (RIE 2)						InP-InGaAs-InAlAs Etch (Unaxis VLR)
InGaAsP		InP-InGaAsP-InGaAlAs Etching (RIE 2)						InP-InGaAs-InAlAs Etch (Unaxis VLR)
InP		InP-InGaAsP-InGaAlAs Etching (RIE 2)						InP-InGaAs-InAlAs Etch (Unaxis VLR)
ITO		R1
SiC						R1	A
SiN			SiN_x Etching (RIE 3)			R1	R1
SiO₂			SiO₂ Etching (RIE 3)			R1	R1							R1
SiOxNy
Ta₂O₅							A
TiN
TiO₂
W-TiW						R1	A
ZnO₂
ZnS		R1
ZnSe		R1
ZrO₂
Material	RIE 1 (Retired)	RIE 2 (MRC)	RIE 3 (MRC)	RIE 5 (PlasmaTherm)	Si Deep RIE (PlasmaTherm/Bosch Etch)	ICP Etch 1 (Panasonic E626I)	ICP Etch 2 (Panasonic E640)	ICP-Etch (Unaxis VLR)	Ashers (Technics PEII)	Plasma Clean (Gasonics 2000)	UV Ozone Reactor	Plasma Activation (EVG 810)	XeF2 Etch (Xetch)	Vapor HF Etch (uETCH)	CAIBE (Oxford)

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