Dry Etching Recipes: Difference between revisions

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Dry Etching Recipes
	RIE Etching				ICP Etching					Oxygen Plasma Systems				Other Dry Etchers
Material	RIE 1 (Retired)	RIE 2 (MRC)	RIE 3 (MRC)	RIE 5 (PlasmaTherm)	DSEIII (PlasmaTherm)	Si Deep RIE (PTI/Bosch)	ICP Etch 1 (Panasonic 1)	ICP Etch 2 (Panasonic 2)	ICP-Etch (Unaxis VLR)	Ashers (Technics PEII)	Plasma Clean (Gasonics 2000)	UV Ozone Reactor	Plasma Activation (EVG 810)	XeF2 Etch (Xetch)	Vapor HF Etch (uETCH)	CAIBE (Oxford)
Ag
Al				A			R1	R1
Au																R1
Cr				A			R1	A
Cu
Ge														A
Mo
Ni																R1
Pt																R1
Ru
Si					A	R1								R1
Ta
Ti							R1	A
Al₂O₃
Al₂O_{3 (Sapphire)}							R1	A
AlGaAs				R1			R1		GaAs-AlGaAs Etch (Unaxis VLR)
AlGaN									R1
AlN									R1
CdZnTe		R1
GaAs				R1			R1	R1	GaAs-AlGaAs Etch (Unaxis VLR)
GaN				[[RIE Etching Recipes#{{{2}}}\|GaN Etching (RIE 5)]]			R1		R1
GaSb								A	GaSb Etch Unaxis VLR)
HfO₂
InGaAlAs		InP-InGaAsP-InGaAlAs Etching (RIE 2)							InP-InGaAs-InAlAs Etch (Unaxis VLR)
InGaAsP		InP-InGaAsP-InGaAlAs Etching (RIE 2)							InP-InGaAs-InAlAs Etch (Unaxis VLR)
InP		InP-InGaAsP-InGaAlAs Etching (RIE 2)					A	A	InP-InGaAs-InAlAs Etch (Unaxis VLR)
ITO		R1
Photoresist & ARC			A	A			A	A		A	A
SiC							R1	A
SiN			SiN_x Etching (RIE 3)				R1	R1		A
SiO₂			SiO₂ Etching (RIE 3)				R1	R1							R1
SiOxNy
Ta₂O₅								A
TiN
TiO₂
W-TiW							R1	A
ZnO₂
ZnS		R1
ZnSe		R1
ZrO₂
Material	RIE 1 (Retired)	RIE 2 (MRC)	RIE 3 (MRC)	RIE 5 (PlasmaTherm)	DSEIII (PlasmaTherm)	Si Deep RIE (PlasmaTherm/Bosch Etch)	ICP Etch 1 (Panasonic E626I)	ICP Etch 2 (Panasonic E640)	ICP-Etch (Unaxis VLR)	Ashers (Technics PEII)	Plasma Clean (Gasonics 2000)	UV Ozone Reactor	Plasma Activation (EVG 810)	XeF2 Etch (Xetch)	Vapor HF Etch (uETCH)	CAIBE (Oxford)

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+|{{rl|RIE Etching Recipes|3=GaN Etching (RIE 5)}}
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