Wet Etching Recipes: Difference between revisions
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(→The Master Table of Wet Etching (Include All Materials): updates to "selective to" fields etc.) |
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! Material !! Etchant !! Rate (nm/min) !! Anisotropy !! Selective to !! Selectivity !! Ref. !! Notes !! Confirmed by !! Extra |
! Material !! Etchant !! Rate (nm/min) !! Anisotropy !! Selective to !! Selectivity !! Ref. !! Notes !! Confirmed by !! Extra Notes |
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| InP|| HCl:H3PO4(1:3)|| ~1000 || Highly || InGaAs || High || [http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf Lamponi (p.102)] || Example || Jon Doe || Example |
| InP|| HCl:H3PO4(1:3)|| ~1000 || Highly || InGaAs || High || [http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf Lamponi (p.102)] || Example || Jon Doe || Example |
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|InP |
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| ⚫ | |||
|HCl:H3PO4(1:3) |
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|~1000 |
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|Highly |
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|InGaAsP |
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|High |
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| ⚫ | |||
|Example |
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|Jon Doe |
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|Example |
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| InP|| H3PO4:HCl(3:1)|| ~1000 || Highly || InGaAs || High || [http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf Lamponi (p.102)] || Example || Jon Doe || Example |
| InP|| H3PO4:HCl(3:1)|| ~1000 || Highly || InGaAs || High || [http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf Lamponi (p.102)] || Example || Jon Doe || Example |
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|InP |
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| ⚫ | |||
|H3PO4:HCl(3:1) |
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|~1000 |
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|Highly |
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|InGaAsP |
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|High |
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| ⚫ | |||
|Example |
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|Jon Doe |
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|Example |
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| Al2O3 ''(ALD Plasma 300C)''|| 300MIF Developer || ~1.6 || |
| Al2O3 ''(ALD Plasma 300C)''|| 300MIF Developer || ~1.6 || None |
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| Selective to most non-Al Materials. |
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| High || Measured in-house || Rate slows with time. || JTB || Example |
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| Al2O3 ''(ALD Plasma 300C)''|| 400K Developer || ~2.2 || |
| Al2O3 ''(ALD Plasma 300C)''|| 400K Developer || ~2.2 || None |
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| Selective to most non-Al Materials. |
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| High || Measured in-house || Rate slows with time. || JTB || Example |
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| Al2O3 ''(ALD Plasma 300C)''|| 400K (1:4) Developer || ~1.6 || |
| Al2O3 ''(ALD Plasma 300C)''|| 400K (1:4) Developer || ~1.6 || None |
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| Selective to most non-Al Materials. |
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| High || Measured in-house || Rate slows with time. || JTB || Example |
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| Al2O3 ''(ALD Plasma 300C)''|| NH4OH:H2O2:H2O (1:2:50) || ~<0.5 || || || High || Measured in-house || Rate slows with time || JTB || Example |
| Al2O3 ''(ALD Plasma 300C)''|| NH4OH:H2O2:H2O (1:2:50) || ~<0.5 || || || High || Measured in-house || Rate slows with time || JTB || Example |
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|Buffered HF |
|Buffered HF |
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|167 |
|167 |
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|None |
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|Photoresist |
|Photoresist |
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|High |
|High |
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|Measured in-house |
|Measured in-house |
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|May need to increase adhesion with thin SiO2 layer, and baked HMDS. |
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|Biljana Stamenic |
|Biljana Stamenic |
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|2017-12 |
|2017-12 |
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|726 MiF Developer |
|726 MiF Developer |
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|3.5 |
|3.5 |
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|None |
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|Selective to most non-Al Materials. |
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|Measured in-house |
|Measured in-house |
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|300 MiF Developer |
|300 MiF Developer |
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|4.30 |
|4.30 |
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|None |
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|Selective to most non-Al Materials. |
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|Measured in-house |
|Measured in-house |
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|Buffered HF |
|Buffered HF |
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|~500 |
|~500 |
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|None |
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|Photoresist |
|Photoresist |
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|High |
|High |
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|Measured in-house |
|Measured in-house |
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|May need to increase adhesion with 100°C baked HMDS. |
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|Biljana Stamenic |
|Biljana Stamenic |
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|2017 |
|2017 |
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|Buffered HF |
|Buffered HF |
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|~500 |
|~500 |
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|None |
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|Photoresist |
|Photoresist |
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|High |
|High |
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|Measured in-house |
|Measured in-house |
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|May need to increase adhesion with 100°C baked HMDS. |
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|Biljana Stamenic |
|Biljana Stamenic |
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|2017 |
|2017 |
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Revision as of 04:51, 24 September 2018
References
- Etch rates for Micromachining Processing (IEEE Jnl. MEMS, 1996) - includes tables of etch rates of numerous metals vs. various wet and dry etchants.
- Etch rates for micromachining-Part II (IEEE Jnl. MEMS, 2003) - expanded tables containing resists, dielectrics, metals and semiconductors vs. many wet etch chemicals.
- Guide to references on III±V semiconductor chemical etching - exhaustive list of wet etchants for etching various semiconductors, including selective etches.
- Transene's Chemical Compatibility Chart provides a useful quick-reference for which Transene etchants attack which materials.
- As a side-note, Transene provides many pre-mixed solutions that you can order, saving you the time and uncertainty of measuring/mixing such chemicals yourself. Make sure you check with us before ordering so we know how to handle the chemical before it arrives.
Compound Semiconductor Etching
Guide to references on III±V semiconductor chemical etching
Please add any confirmed etches from this reference to the The Master Table of Wet Etching (Include All Materials).
Metal Etching
- Selective Wet Etch of Cr over Ta using Cr Etchant
- Wet Etch of ITO using Heated, Diluted HCl Solution
Silicon etching
Etch rates for micromachining processing
Etch rates for micromachining processing-part II
Please add any confirmed etches from this reference to the The Master Table of Wet Etching (Include All Materials).
Dielectric etching
Organic removal
Gold Plating
Chemi-Mechanical Polishing (CMP)
Example Wet Etching Table
How to use the Master Table of Wet Etching:
When entering a new etch into the table make a row for every etchant used in the solution such that the information can be sorted by etchant. For example, the InP etch HCl:H3PO4(1:3) and H3PO4:HCl(3:1). Likewise, if etch is known to be selective to multiple materials the etch should have a row for each material. For example HCl:H3PO4(1:3) is selective to both InGaAs and InGaAsP.
This multiple entry method may seem laborious for the person entering a new etch, however the power of sorting by selective materials and chemicals in a table with all materials is great.
| Material | Etchant | Rate (nm/min) | Anisotropy | Selective to | Selectivity | Ref. | Notes | Confirmed by | Extra column |
|---|---|---|---|---|---|---|---|---|---|
| InP | HCl:H3PO4(1:3) | ~1000 | Highly | InGaAs | High | Lamponi (p.102) | Example | Jon Doe | Example |
| InP | HCl:H3PO4(1:3) | ~1000 | Highly | InGaAsP | High | Lamponi (p.102) | Example | Jon Doe | Example |
| InP | H3PO4:HCl(3:1) | ~1000 | Highly | InGaAs | High | Lamponi (p.102) | Example | Jon Doe | Example |
| InP | H3PO4:HCl(3:1) | ~1000 | Highly | InGaAsP | High | Lamponi (p.102) | Example | Jon Doe | Example |
The Master Table of Wet Etching (Include All Materials)
| Material | Etchant | Rate (nm/min) | Anisotropy | Selective to | Selectivity | Ref. | Notes | Confirmed by | Extra Notes |
|---|---|---|---|---|---|---|---|---|---|
| InP | HCl:H3PO4(1:3) | ~1000 | Highly | InGaAs | High | Lamponi (p.102) | Example | Jon Doe | Example |
| InP | HCl:H3PO4(1:3) | ~1000 | Highly | InGaAsP | High | Lamponi (p.102) | Example | Jon Doe | Example |
| InP | H3PO4:HCl(3:1) | ~1000 | Highly | InGaAs | High | Lamponi (p.102) | Example | Jon Doe | Example |
| InP | H3PO4:HCl(3:1) | ~1000 | Highly | InGaAsP | High | Lamponi (p.102) | Example | Jon Doe | Example |
| Al2O3 (ALD Plasma 300C) | 300MIF Developer | ~1.6 | None | Selective to most non-Al Materials. | High | Measured in-house | Rate slows with time. | JTB | Example |
| Al2O3 (ALD Plasma 300C) | 400K Developer | ~2.2 | None | Selective to most non-Al Materials. | High | Measured in-house | Rate slows with time. | JTB | Example |
| Al2O3 (ALD Plasma 300C) | 400K (1:4) Developer | ~1.6 | None | Selective to most non-Al Materials. | High | Measured in-house | Rate slows with time. | JTB | Example |
| Al2O3 (ALD Plasma 300C) | NH4OH:H2O2:H2O (1:2:50) | ~<0.5 | High | Measured in-house | Rate slows with time | JTB | Example | ||
| Al2O3 (IBD) | Buffered HF | 167 | None | Photoresist | High | Measured in-house | May need to increase adhesion with thin SiO2 layer, and baked HMDS. | Biljana Stamenic | 2017-12 |
| Al2O3 (IBD) | 726 MiF Developer | 3.5 | None | Selective to most non-Al Materials. | Measured in-house | Demis D. John | 2017-11 | ||
| Al2O3 (AJA#4) | 300 MiF Developer | 4.30 | None | Selective to most non-Al Materials. | Measured in-house | Demis D. John | 2018-02 | ||
| SiO2 (PECVD #1) | Buffered HF | ~500 | None | Photoresist | High | Measured in-house | May need to increase adhesion with 100°C baked HMDS. | Biljana Stamenic | 2017 |
| SiO2 (PECVD #2) | Buffered HF | ~500 | None | Photoresist | High | Measured in-house | May need to increase adhesion with 100°C baked HMDS. | Biljana Stamenic | 2017 |