Oxygen Plasma System Recipes: Difference between revisions
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==[[Ashers (Technics PEII)]]== |
==[[Ashers (Technics PEII)]]== |
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===CF4/O2 PEii=== |
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====SiN Etching==== |
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==[[Plasma Clean (Gasonics 2000)]]== |
==[[Plasma Clean (Gasonics 2000)]]== |
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==[[UV Ozone Reactor]]== |
==[[UV Ozone Reactor]]== |
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The UV Ozone Reactor is used for two purposes: |
The UV Ozone Reactor is used for two purposes: |
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*Etch away organic residue with no ion bombardment |
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*Oxidize surface (monolayers) of a substrate, which has been used for |
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**Providing a wet-etchable sacrifical surface layer which is removed prior to deposition or regrowth |
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**Controlled digital etching, by wet etching the oxide and then repeating the oxidation/etch cycle. |
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==[[Plasma Activation (EVG 810)]]== |
==[[Plasma Activation (EVG 810)]]== |
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O2 and N2 plasma activation recipes are available on this tool |
O2 and N2 plasma activation recipes are available on this tool: |
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* ExSitu_0.4mbar |
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* ExSitu_0.4mbar_Line2 |
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* ExSitu_0.8mbar |
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* ExSitu_0.8mbar_Line2 |
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* Dis 0.2mbar_Line2 |
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Revision as of 21:47, 11 September 2019
Back to Dry Etching Recipes.
Ashers (Technics PEII)
CF4/O2 PEii
SiN Etching
- Pressure = 300mT–350mT
- Power = 100W
- Etch Rate ≈ 50-100 nm/min. Varies.
Chamber Clean after CF4 Etching
- Pressure = 300mT–350mT
- Power = 300W
- Time = 10min
- Set power back to 100W before shutting off plasma!
Plasma Clean (Gasonics 2000)
Recipes are posted at the tool, with photoresist etch rates.
UV Ozone Reactor
The UV Ozone Reactor is used for two purposes:
- Etch away organic residue with no ion bombardment
- Oxidize surface (monolayers) of a substrate, which has been used for
- Providing a wet-etchable sacrifical surface layer which is removed prior to deposition or regrowth
- Controlled digital etching, by wet etching the oxide and then repeating the oxidation/etch cycle.
Plasma Activation (EVG 810)
O2 and N2 plasma activation recipes are available on this tool:
- ExSitu_0.4mbar
- ExSitu_0.4mbar_Line2
- ExSitu_0.8mbar
- ExSitu_0.8mbar_Line2
- Dis 0.2mbar_Line2