Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer): Difference between revisions

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| colspan="5" |ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
| colspan="5" |ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
|
|-
|-
|Date
|Date
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|Etch Selectivity (SiO2/PR)
|Etch Selectivity (SiO2/PR)
|Averaged Sidewall Angle (<sup>o</sup>)
|Averaged Sidewall Angle (<sup>o</sup>)
|SEM Images
|-
|-
|10/5/2018
|10/5/2018
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|0.74
|0.74
|77.9
|77.9
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|-
|1/28/2019
|1/28/2019
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|0.77
|0.77
|
|
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|[https://www.nanotech.ucsb.edu/wiki/images/f/fa/SiO2_Etch_using_ICP2_with_O2-a.pdf]
|}
|}
⚫
[https://www.nanotech.ucsb.edu/wiki/index.php/File:SiO2_Etch_using_ICP2_with_O2-a.pdf]

Revision as of 07:03, 30 January 2019

ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
10/5/2018 SiO2#01 95.2 0.74 77.9
1/28/2019 I21902 92.1 0.77 [1]
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