PECVD Recipes: Difference between revisions

From UCSB Nanofab Wiki
Jump to navigation Jump to search
Line 231: Line 231:
*[https://docs.google.com/spreadsheets/d/1y4mpR4i0gbzSNRbSYGASVSms36FuPh-jDnS3v82OEII/edit#gid=sharing Thickness Uniformity SiO2 HDR 100C 300nm-2019]
*[https://docs.google.com/spreadsheets/d/1y4mpR4i0gbzSNRbSYGASVSms36FuPh-jDnS3v82OEII/edit#gid=sharing Thickness Uniformity SiO2 HDR 100C 300nm-2019]


2019 Data SiO2 300C


*[https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=sharing SiO2 LDR 250C 300nm Data-2019]
*[https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=sharing SiO2 LDR 250C 300nm Data-2019]

Revision as of 21:32, 25 March 2020

Back to Vacuum Deposition Recipes.

PECVD 1 (PlasmaTherm 790)

Historical Particulate Data

SiN deposition (PECVD #1)

Historical Data

Thin-Film Properties
Uniformity Data

SiO2 deposition (PECVD #1)

Historical Data

Thin-Film Properties

Uniformity Data

Low-Stress SiN - LS-SiN (PECVD#1)

SiOxNy deposition (PECVD #1)

Cleaning Recipes (PECVD #1)

To Be Added...

PECVD 2 (Advanced Vacuum)

Historical Particulate Data

SiO2 deposition (PECVD #2)

Standard Recipe

Historical Data

Thin-Film Properties
Uniformity Data

SiN deposition (PECVD #2)

Standard Recipe

Historical Data

Thin-Film Properties
Uniformity Data

Low-Stress SiN deposition (PECVD #2)

Low-Stress SilIcon Nitride (< 100 MPa)

Standard Recipe

Historical Data

Thin-Film Properties
Uniformity Data

Amorphous-Si deposition (PECVD #2)

Cleaning Recipes (PECVD #2)

To Be Added...

ICP-PECVD (Unaxis VLR)

SiN deposition (Unaxis VLR)

The recipe SiN 100C is not valid currently, and is still under development. 
-- Demis 2019-11-22
The recipes SiN250C and SiN LS 250C are valid:

SiO2 deposition (Unaxis VLR)

2019 Data SiO2 100C

2019 Data SiO2 300C


Cleaning Recipes (Unaxis VLR Dep)

You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.

  • SiNx etches at 20nm/min
  • SiO2 etches at 40nm/min