PECVD Recipes: Difference between revisions

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(→‎Standard Recipe: Updated recipe for STD SiO2)
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*[https://docs.google.com/spreadsheets/d/1vgWUtpCWC_TFffU9kuR3wqvjryiNA5OV/edit#gid= STD Oxide Recipe Parameters]
*[https://docs.google.com/spreadsheets/d/1vgWUtpCWC_TFffU9kuR3wqvjryiNA5OV/edit#gid= STD Oxide Recipe Parameters]
*[https://wiki.nanotech.ucsb.edu/w/images/4/4f/Adv._PECVD2-STD_SiO2.xlsx STD SiO2 Recipe]
*STD SiO2 Recipe


==== Historical Data ====
==== Historical Data ====

Revision as of 16:57, 21 April 2020

Back to Vacuum Deposition Recipes.

PECVD 1 (PlasmaTherm 790)

Historical Particulate Data

SiN deposition (PECVD #1)

Historical Data

Thin-Film Properties
Uniformity Data

SiO2 deposition (PECVD #1)

Historical Data

Thin-Film Properties

Uniformity Data

Low-Stress SiN - LS-SiN (PECVD#1)

SiOxNy deposition (PECVD #1)

Cleaning Recipes (PECVD #1)

The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

  1. Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
  2. Load the recipe for cleaning " CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.

" CF4/O2 Clean recipe"

PECVD1- cleaning recipe

PECVD 2 (Advanced Vacuum)

Historical Particulate Data

SiO2 deposition (PECVD #2)

Standard Recipe

Historical Data

Thin-Film Properties
Uniformity Data

SiN deposition (PECVD #2)

Standard Recipe

Historical Data

Thin-Film Properties
Uniformity Data

Low-Stress SiN deposition (PECVD #2)

Low-Stress SilIcon Nitride (< 100 MPa)

Standard Recipe

Historical Data

Thin-Film Properties
Uniformity Data

Amorphous-Si deposition (PECVD #2)

Cleaning Recipes (PECVD #2)

The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

  1. Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
  2. Load the recipe for cleaning " STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.

" STD CF4/O2 Clean recipe"

Advanced PECVD2 Cleaning recipe

ICP-PECVD (Unaxis VLR)

Historical Particulate Data

SiN deposition (Unaxis VLR)

SiN 250C Data 2020

SiN LS 250C Data 2020

SiO2 deposition (Unaxis VLR)

SiO2 250C Data 2019

SiO2 250C Data 2020

Cleaning Recipes (Unaxis VLR Dep)

You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.

  • SiNx etches at 20nm/min
  • SiO2 etches at 40nm/min

" Post-Dep Clean" recipe

Add the picture of " Post-Dep Clean" recipe

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