Unaxis wafer coating procedure

1. Unaxis deposition - 300nm of  SiO2 LDR film @250°C

a) Prepare wafers:

·      Regular 4 " Si wafer ~500nm think for seasoning

·      Your substrate for deposition (if smaller then 4" needs to be loaded on a carrier)

·      Thick 4" Si wafer~(0.8-1um) for cleaning

b) Load all 3 wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.

c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in these recipes.

Seasoning recipe name: SiO2 seasoning, t=2min

Deposition recipe name:  SiO2 LDR 250°C, t=780 sec

Cleaning recipe name: Post dep PD, t=900sec

d) Run the job (first run seasoning, then deposition on your substate and cleaning at the end.

You should monitor process at the very beginning to make sure there are no any issues with the run.

·      There is only one SiO2 seasoning recipe that is used for both LDR and HDR depositions. The goal in this step is to prepare the chamber and deposit ~200nm of SiO2 on walls.

e) Unload wafers when all runs are finished.

2. Unaxis SiO2 HDR @250°C deposition

a) Prepare wafers:

·      Regular 4 " Si wafer ~500nm think for seasoning

·      Your substrate for deposition (if smaller then 4" needs to be loaded on a carrier)

·      Thick 4" Si wafer~(0.8-1um) for cleaning

b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.

c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in the recipe.

Seasoning recipe name: SiO2 seasoning, t=2min

Deposition recipe name: SiO2 HDR 250°C, t=180 sec

Cleaning recipe name: Post dep PD, t=900sec

d) Run the job (first run seasoning, then deposition on your substate and cleaning at the end.

You should monitor process at the very beginning to make sure there are no any issues with the run.

·      There is only one SiO2 seasoning recipe that is used for both LDR and HDR depositions. The goal in this step is to prepare the chamber and deposit ~200nm of SiO2 on walls.

e) Unload wafers when all runs are finished.

3. Unaxis SiN @250°C deposition

a) Prepare wafers:

·      Regular 4 " Si wafer ~500nm think for seasoning

·      Your substrate for deposition (if smaller then 4" needs to be loaded on a carrier)

·      Thick 4" Si wafer~(0.8-1um) for cleaning

b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.

c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in the recipe.

Seasoning recipe name: SiN seasoning, t=5min

Deposition recipe name: SiN 250°C, t=480 sec

Cleaning recipe name: Post dep PD, t=1500sec

d) Run the job (first run seasoning, then deposition on your substate and cleaning at the end.

You should monitor process at the very beginning to make sure there are no any issues with the run.

e) Unload wafers when all runs are finished.

a) Prepare wafers:

·      Regular 4 " Si wafer ~500nm think for seasoning

·      Your substrate for deposition (if smaller then 4" needs to be loaded on a carrier)

·      Thick 4" Si wafer~(0.8-1um) for cleaning

b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.

c) Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in the recipe.

Seasoning recipe name: SiN seasoning, t=2min

Deposition recipe name: SiN LS 250°C, t=180 sec

Cleaning recipe name: Post dep PD, t=1500sec

d) Run the job (first run seasoning, then deposition on your substate and cleaning at the end.

You should monitor process at the very beginning to make sure there are no any issues with the run.

e) Unload wafers when all runs are finished.