Test Data of etching SiO2 with CHF3/CF4: Difference between revisions

Content deleted Content added

Inline

Revision as of 17:16, 30 March 2022

ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date	Sample#	Etch Rate (nm/min)	Etch Selectivity (SiO2/PR)	Averaged Sidewall Angle (^o)	SEM Images
10/5/2018	SiO2#02	160	1.2	82.1	[1]
1/28/2019	I21901	146	1.23		[2]
3/6/2019	I21904	151	1.23	85.6	[3]
7/18/2019	I21905	162	1.37		[4]
1/16/2020	I22001	149	1.21		[5]
8/9/2020	I22002	102	0.86	caused by air leaking to CHF3 channel	[6]
1/7/2021	I22101	144	1.20		[7]
5/19/2021	I22102	163	1.11	Etch time=130 sec	[8]
7/21/2021	I22103	134	1.09	Investigating reports of low etch rate	[9]
8/9/2021	I22104	147	1.06	Before etching diamond sample for 1 hour using Cl2/Ar	[10]
8/9/2021	I22105	140	0.97	After etching diamond sample for 1 hour using Cl2/Ar. Found chamber/etches are ok.	[11]
3/2/2022	NP_ICP2_01	169.6	1.29		[1] [2]
3/8/2022	NP_ICP2_02	144	1.02		[1] [2]
3/30/2022	NP_ICP2_03	164	1.23		[1] [2]

We stopped taking data for the following table in 2019, use the above data instead.

@@ Line 90: / Line 90: @@
 |NP_ICP2_01
 |169.6
+|1.29
-|
 |
 |[https://wiki.nanotech.ucsb.edu/w/images/2/2e/ICP2_01_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/69/ICP2_01_CS_007.jpg <nowiki>[2]</nowiki>]
@@ Line 97: / Line 97: @@
 |NP_ICP2_02
 |144
+|1.02
-|
 |
 |[https://wiki.nanotech.ucsb.edu/w/images/f/f4/ICP2_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/5/54/ICP2_02_CS_004.jpg <nowiki>[2]</nowiki>]
+|-
+|3/30/2022
+|NP_ICP2_03
+|164
+|1.23
+|
+|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/ICP2_03_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/74/ICP2_03_CS_003.jpg <nowiki>[2]</nowiki>]
 |}<br />
 ===Alternate Data (not updated)===