Dry Etching Recipes: Difference between revisions

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Revision as of 00:45, 13 April 2022

  • R = Recipe is available. Clicking this link will take you to the recipe.
  • A = Material is available for use, but no recipes are provided.


Dry Etching Recipes
RIE Etching ICP Etching Oxygen Plasma Systems Other Dry Etchers
Material RIE 2
(MRC) 		RIE 3
(MRC) 		RIE 5
(PlasmaTherm) 		DSEIII
(PlasmaTherm) 		Fluorine ICP (PlasmaTherm) ICP Etch 1
(Panasonic E626I) 		ICP Etch 2
(Panasonic E640) 		Oxford ICP (PlasmaPro 100) ICP-Etch
(Unaxis VLR) 		Ashers
(Technics PEII) 		Plasma Clean
(Gasonics 2000) 		Plasma Clean (YES EcoClean) UV Ozone Reactor Plasma Activation
(EVG 810) 		XeF2 Etch
(Xetch) 		Vapor HF Etch
(uETCH) 		CAIBE
(Oxford)
Ag A
Al A R1 R1 A
Au R1
Cr A R1 A A
Cu A
Ge A A
Mo A
Ni R1
Pt R1
Ru A R1 A
Si R1 R1 A R1 A
Ta A
Ti R1 A A
Al2O3 R A
Al2O3 (Sapphire) R1 A A
AlGaAs R1 R1 R GaAs-AlGaAs Etch (Unaxis VLR) A
AlGaN R R1 A
AlN R1 A
CdZnTe R1 A
GaAs R1 R1 R1 R GaAs-AlGaAs Etch (Unaxis VLR) A
GaN R1 R1 R R1 A
GaSb A GaSb Etch Unaxis VLR) A
HfO2 A
InGaAlAs InP-InGaAsP-InGaAlAs Etching (RIE 2) A InP-InGaAs-InAlAs Etch (Unaxis VLR) A
InGaAsP InP-InGaAsP-InGaAlAs Etching (RIE 2) R InP-InGaAs-InAlAs Etch (Unaxis VLR) A
InP InP-InGaAsP-InGaAlAs Etching (RIE 2) A A R InP-InGaAs-InAlAs Etch (Unaxis VLR) R1
ITO R1 A
Photoresist

& ARC

A R R R R A A A A
SiC R1 A A
SiN SiNx Etching (RIE 3) A R1 R1 A A
SiO2 SiO2 Etching (RIE 3) R1 R1 R1 R1 A
SiOxNy A A A
Ta2O5 A A
TiN A
TiO2 A
W-TiW R1 A A
ZnO2 A
ZnS R1 A
ZnSe R1 A
ZrO2 A
Material RIE 2
(MRC) 		RIE 3
(MRC) 		RIE 5
(PlasmaTherm) 		DSEIII
(PlasmaTherm) 		Fluorine ICP (PlasmaTherm) ICP Etch 1
(Panasonic E626I) 		ICP Etch 2
(Panasonic E640) 		Oxford ICP (PlasmaPro 100) ICP-Etch
(Unaxis VLR) 		Ashers
(Technics PEII) 		Plasma Clean
(Gasonics 2000) 		Plasma Clean (YES EcoClean) UV Ozone Reactor Plasma Activation
(EVG 810) 		XeF2 Etch
(Xetch) 		Vapor HF Etch
(uETCH) 		CAIBE
(Oxford)
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