Dry Etching Recipes: Difference between revisions
Jump to navigation
Jump to search
(corrected SiC for ICP2 so that it is R1 instead of R4, which was a mistake to ever put it at R4. Also added a link to GaAs etch on ICP2) |
(changed Al2O3 etch from R4 to R3) |
||
Line 309: | Line 309: | ||
| |
| |
||
|A |
|A |
||
|[https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#Al2O3_Etching_.28Panasonic_2.29 |
|[https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#Al2O3_Etching_.28Panasonic_2.29 R3] |
||
| |
| |
||
| |
| |
Revision as of 21:33, 30 July 2024
fProcess Control Data
See above linked page for process control data (dep rate/stress etc. over time), for a selection of often-used dry etches
Dry Etching Tools/Materials Table
The Key/Legend for this table's A...R6
values is at the bottom of the page.
Process Ranking Table
Processes in the table above are ranked by their "Process Maturity Level" as follows:
Process Level | Description of Process Level Ranking | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|
A | Process Allowed and materials available but never done | ||||||||||
R1 | Process has been run at least once | ||||||||||
R2 | Process has been run and/or procedure is documented or/and data available | ||||||||||
R3 | Process has been run, procedure is documented, and data is available | ||||||||||
R4 | Process has a documented procedure with regular (≥4x per year) data or lookahead/in-situ control available | ||||||||||
R5 | Process has a documented procedure with regular (≥4x per year) data and lookahead/in-situ control available | ||||||||||
R6 | Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available |