Dry Etching Recipes

Process Control Data

See above linked page for process control data (dep rate/stress etc. over time), for a selection of often-used dry etches

Dry Etching Tools/Materials Table

The Key/Legend for this table's A...R6 values is at the bottom of the page.

Dry Etching Recipes
	RIE Etching		ICP Etching					Oxygen Plasma Systems				Other Dry Etchers
Material	RIE 2 (MRC)	RIE 5 (PlasmaTherm)	DSEIII (PlasmaTherm)	Fluorine ICP (PlasmaTherm)	ICP Etch 1 (Panasonic E646V)	ICP Etch 2 (Panasonic E626I)	Oxford ICP (PlasmaPro 100)	Ashers (Technics PEII)	Plasma Clean (YES EcoClean)	UV Ozone Reactor	Plasma Activation (EVG 810)	XeF2 Etch (Xetch)	Vapor HF Etch (uETCH)	CAIBE (Oxford)
Ag														A
Al		R2			R1	R2								A
Au														R1
Cr		R2			R1	R1								A
Cu														A
Ge					A	R1						A		A
Mo														A
Nb					A	R1
Ni														R1
Os					A	R1
Pt														R1
Ru					A	R3								A
Si			R1	R5			R1					R1		A
Ta					A	R1								A
Ti					R1	R1								A
Al2O3					A	R3								A
Al2O3 (Sapphire)					R1	R1								A
AlGaAs		R3			R1		R3							A
AlGaN							R2							A
AlN														A
BCB					A
CdZnTe	R1													A
GaAs		R4			R1	R3	R3							A
GaN		R4			R1	R1	R2							A
GaSb					A	R1	R1							A
HfO2														A
InGaAlAs	InP-InGaAsP-InGaAlAs Etching (RIE 2)						R1							A
InGaAsP	InP-InGaAsP-InGaAlAs Etching (RIE 2)						R3							A
InP	InP-InGaAsP-InGaAlAs Etching (RIE 2)				A	R1	R6							R1
ITO	R1													A
LiNbO3														A
Photoresist & ARC		R3		R3	R	R3		R	R					A
SiC					R1	R1								A
SiN				R3	R1	R3		A						A
SiO2				R6	R1	R6							R1	A
SiOxNy					A	R1								A
SU8					A
Ta2O5					A	R1								A
TiN														A
TiO2														A
W-TiW				R2	R1	R1								A
ZnO2														A
ZnS	R1													A
ZnSe	R1													A
ZrO2														A
Material	RIE 2 (MRC)	RIE 5 (PlasmaTherm)	DSEIII (PlasmaTherm)	Fluorine ICP (PlasmaTherm)	ICP Etch 1 (Panasonic E626I)	ICP Etch 2 (Panasonic E640)	Oxford ICP (PlasmaPro 100)	Ashers (Technics PEII)	Plasma Clean (YES EcoClean)	UV Ozone Reactor	Plasma Activation (EVG 810)	XeF2 Etch (Xetch)	Vapor HF Etch (uETCH)	CAIBE (Oxford)

Process Ranking Table

Processes in the table above are ranked by their "Process Maturity Level" as follows:

Process Level	Description of Process Level Ranking
A	Process Allowed and materials available but never done
R1	Process has been run at least once
R2	Process has been run and/or procedure is documented or/and data available
R3	Process has been run, procedure is documented, and data is available
R4	Process has a documented procedure with regular (≥4x per year) data or lookahead/in-situ control available
R5	Process has a documented procedure with regular (≥4x per year) data and lookahead/in-situ control available
R6	Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available