Oxygen Plasma System Recipes: Difference between revisions
Jump to navigation
Jump to search
No edit summary |
(→Ashers (Technics PEII): added SiN etch and chamber clean) |
||
| Line 1: | Line 1: | ||
{{recipes|Dry Etching}} |
{{recipes|Dry Etching}} |
||
=[[Ashers (Technics PEII)]]= |
==[[Ashers (Technics PEII)]]== |
||
| ⚫ | |||
=== CF4/O2 PEii === |
|||
| ⚫ | |||
| ⚫ | |||
==== SiN Etching ==== |
|||
* Pressure = 300mT–350mT |
|||
* Power = 100W |
|||
* Etch Rate ≈ 50-100 nm/min. Varies. |
|||
=== Chamber Clean after CF4 Etching === |
|||
* Pressure = 300mT–350mT |
|||
* Power = 300W |
|||
* Time = 10min |
|||
* <u>Set power back to 100W ''before'' shutting off plasma!</u> |
|||
| ⚫ | |||
| ⚫ | |||
| ⚫ | |||
Revision as of 22:25, 28 August 2018
Back to Dry Etching Recipes.
Ashers (Technics PEII)
CF4/O2 PEii
SiN Etching
- Pressure = 300mT–350mT
- Power = 100W
- Etch Rate ≈ 50-100 nm/min. Varies.
Chamber Clean after CF4 Etching
- Pressure = 300mT–350mT
- Power = 300W
- Time = 10min
- Set power back to 100W before shutting off plasma!