PECVD Recipes: Difference between revisions

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=== SiN (100% SiH<sub>4</sub>) ===
=== SiN (100% SiH<sub>4</sub> ===
{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
*[[Media:PECVD2-SiN-Recipe-100SiH4-100C-Low-Stress.pdf|SiN Deposition Recipe - 100% SiH<sub>4</sub> (100° Low Stress)]]
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*[[Media:PECVD2-SiN-Recipe-100SiH4-100C-Medium-Stress.pdf|SiN Deposition Recipe - 100% SiH<sub>4</sub> (100° Medium Stress)]]
!width=350 align=center|50°
!width=350 align=center|100°
!width=350 align=center|250°
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*[[Media:PECVD2-SiN-Recipe-120W-50C-Low-Stress.pdf|SiN Deposition Recipe (120W 50° Low Stress)]]
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*[[Media:PECVD2-SiN-Recipe-NoAr-ExtraN2-120W-100C-Low-Stress.pdf|SiN Deposition Recipe - No Ar Extra N<sub>2</sub> (120W 100° Low Stress)]]
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*[[Media:PECVD2-SiN-Recipe-NoAr-ExtraN2-120W-250C-Low-Stress.pdf|SiN Deposition Recipe - No Ar Extra N<sub>2</sub> (120W 250° Low Stress)]]
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==SiO<sub>2</sub> deposition (Unaxis VLR) ==
==SiO<sub>2</sub> deposition (Unaxis VLR) ==

Revision as of 18:49, 3 October 2012

Back to Vacuum Deposition Recipes.

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

SiO2 deposition (PECVD #1)

PECVD 2 (Advanced Vacuum)

SiN deposition (PECVD #2)

SiO2 deposition (PECVD #2)

ICP-PECVD (Unaxis VLR)

SiN deposition (Unaxis VLR)

SiN (2% SiH4)

50° 100° 250°

SiN (2% SiH4 - No-Ar)

50° 100° 250°

SiN (2% SiH4 - No-Ar - Extra N2)

50° 100° 250°

SiN (100% SiH4

50° 100° 250°

SiO2 deposition (Unaxis VLR)

SiO2 (2% SiH4)

50° 100° 250°

SiO2 (2% SiH4 - No Ar)

50° 100° 250°

SiO2 (100% SiH4 HDR)

50° 100° 250°

SiO2 (100% SiH4 LDR)

50° 100° 250°