PECVD Recipes: Difference between revisions
Jump to navigation
Jump to search
Line 94: | Line 94: | ||
|- align=left |
|- align=left |
||
| |
| |
||
*[[Media:PECVD2-SiN-Recipe- |
*[[Media:PECVD2-SiN-Recipe-Medium stress SiNx-100%SiH4-120W-50C.pdf|SiN Deposition Recipe (120W 50° Medium Stress)]] |
||
| |
| |
||
*[[Media:PECVD2-SiN-Recipe- |
*[[Media:PECVD2-SiN-Recipe-Medium stres SiNx-100% SiH4-120W-100C.pdf|SiN Deposition Recipe (120W 100° Medium Stress)]] |
||
| |
| |
||
*[[Media:PECVD2-SiN-Recipe- |
*[[Media:PECVD2-SiN-Recipe-Medium stress SiNx-100% SiH4-120W-250C.pdf|SiN Deposition Recipe (120W 250° Medium Stress)]] |
||
|- |
|- |
||
Revision as of 19:05, 3 October 2012
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
SiO2 deposition (PECVD #1)
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
SiO2 deposition (PECVD #2)
ICP-PECVD (Unaxis VLR)
SiN deposition (Unaxis VLR)
SiN (2% SiH4)
50° | 100° | 250° |
---|---|---|
SiN (2% SiH4 - No-Ar)
50° | 100° | 250° |
---|---|---|
SiN (2% SiH4 - No-Ar - Extra N2)
50° | 100° | 250° |
---|---|---|
SiN (100% SiH4 )
50° | 100° | 250° |
---|---|---|
SiO2 deposition (Unaxis VLR)
SiO2 (2% SiH4)
50° | 100° | 250° |
---|---|---|
SiO2 (2% SiH4 - No Ar)
50° | 100° | 250° |
---|---|---|
SiO2 (100% SiH4 HDR)
50° | 100° | 250° |
---|---|---|
SiO2 (100% SiH4 LDR)
50° | 100° | 250° |
---|---|---|