PECVD Recipes: Difference between revisions
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*[[Media:PECVD2-SiN-Recipe-50W-100C-Medium-Stress.pdf|SiN Deposition Recipe (50W 100° Medium Stress)]] |
*[[Media:PECVD2-SiN-Recipe-50W-100C-Medium-Stress.pdf|SiN Deposition Recipe (50W 100° Medium Stress)]] |
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*[[Media:PECVD2-SiN-Recipe-120W-100C-Low-Stress.pdf|SiN Deposition Recipe (120W 100° Low Stress)]] |
*[[Media:PECVD2-SiN-Recipe-120W-100C-Low-Stress.pdf|SiN Deposition Recipe (120W 100° Low Stress)]] |
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*[[Media:PECVD2-SiNx-Comparison table-2% SiH4-100C-120W.pdf|SiN Comparison Table SiNx (120W 100° Low Stress)]] |
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*[[Media:PECVD2-SiN-Recipe-5W-250C-High-Stress.pdf|SiN Deposition Recipe (5W 250° High Stress)]] |
*[[Media:PECVD2-SiN-Recipe-5W-250C-High-Stress.pdf|SiN Deposition Recipe (5W 250° High Stress)]] |
Revision as of 22:31, 3 October 2012
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
SiO2 deposition (PECVD #1)
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
SiO2 deposition (PECVD #2)
ICP-PECVD (Unaxis VLR)
SiN deposition (Unaxis VLR)
SiN (2% SiH4)
50° | 100° | 250° |
---|---|---|
SiN (2% SiH4 - No-Ar)
50° | 100° | 250° |
---|---|---|
SiN (2% SiH4 - No-Ar - Extra N2)
50° | 100° | 250° |
---|---|---|
SiN (100% SiH4 )
50° | 100° | 250° |
---|---|---|
SiO2 deposition (Unaxis VLR)
SiO2 (2% SiH4)
50° | 100° | 250° |
---|---|---|
SiO2 (2% SiH4 - No Ar)
50° | 100° | 250° |
---|---|---|
SiO2 (100% SiH4 HDR)
50° | 100° | 250° |
---|---|---|
SiO2 (100% SiH4 LDR)
50° | 100° | 250° |
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