PECVD Recipes: Difference between revisions
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*[[Media:PECVD2-SiN-Recipe-50W-250C-Medium-Stress.pdf|SiN Deposition Recipe (50W 250° Medium Stress)]] |
*[[Media:PECVD2-SiN-Recipe-50W-250C-Medium-Stress.pdf|SiN Deposition Recipe (50W 250° Medium Stress)]] |
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*[[Media:PECVD2-SiN-Recipe-120W-250C-Low-Stress.pdf|SiN Deposition Recipe (120W 250° Low Stress)]] |
*[[Media:PECVD2-SiN-Recipe-120W-250C-Low-Stress.pdf|SiN Deposition Recipe (120W 250° Low Stress)]] |
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*[[Media:PECVD2-SiNx-Comparison table-2% SiH4-250C-120W.pdf|SiN Comparison Table SiNx (120W 250° Low Stress)]] |
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Revision as of 22:38, 3 October 2012
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
SiO2 deposition (PECVD #1)
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
SiO2 deposition (PECVD #2)
ICP-PECVD (Unaxis VLR)
SiN deposition (Unaxis VLR)
SiN (2% SiH4)
| 50° | 100° | 250° |
|---|---|---|
SiN (2% SiH4 - No-Ar)
| 50° | 100° | 250° |
|---|---|---|
SiN (2% SiH4 - No-Ar - Extra N2)
| 50° | 100° | 250° |
|---|---|---|
SiN (100% SiH4 )
| 50° | 100° | 250° | |
|---|---|---|---|
SiO2 deposition (Unaxis VLR)
SiO2 (2% SiH4)
| 50° | 100° | 250° |
|---|---|---|
SiO2 (2% SiH4 - No Ar)
| 50° | 100° | 250° |
|---|---|---|
SiO2 (100% SiH4 HDR)
| 50° | 100° | 250° |
|---|---|---|
SiO2 (100% SiH4 LDR)
| 50° | 100° | 250° |
|---|---|---|