PECVD Recipes: Difference between revisions
Jump to navigation
Jump to search
Line 129: | Line 129: | ||
*[[Media:SiO2 film Unaxis ICP vs PECVD I.pdf|SiO<sub>2</sub> film Unaxis ICP vs PECVD I]] |
*[[Media:SiO2 film Unaxis ICP vs PECVD I.pdf|SiO<sub>2</sub> film Unaxis ICP vs PECVD I]] |
||
| |
| |
||
*[[Media:PECVD2-SiO2Recipe-5W-250C.pdf|SiO<sub>2</sub> Deposition Recipe (5W 250°)]] |
*[[Media:PECVD2-SiO2Recipe-5W-250C.pdf|SiO<sub>2</sub> Deposition Recipe (5W 250°)]] |
||
*[[Media:SiO2 film Unaxis ICP vs PECVD I.pdf|SiO<sub>2</sub> film Unaxis ICP vs PECVD I]] |
|||
|- |
|- |
||
|} |
|} |
Revision as of 23:01, 10 October 2012
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
SiO2 deposition (PECVD #1)
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
SiO2 deposition (PECVD #2)
ICP-PECVD (Unaxis VLR)
SiN deposition (Unaxis VLR)
SiN (2% SiH4)
SiN (2% SiH4 - No-Ar)
50° | 100° | 250° |
---|---|---|
SiN (2% SiH4 - No-Ar - Extra N2)
50° | 100° | 250° |
---|---|---|
SiN (100% SiH4 )
50° | 100° | 250° |
---|---|---|
SiO2 deposition (Unaxis VLR)
SiO2 (2% SiH4)
50° | 100° | 250° |
---|---|---|
SiO2 (2% SiH4 - No Ar)
50° | 100° | 250° |
---|---|---|
SiO2 (100% SiH4 HDR)
50° | 100° | 250° |
---|---|---|
SiO2 (100% SiH4 LDR)
50° | 100° | 250° |
---|---|---|