Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer): Difference between revisions
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moved SEM images to table, changed "File:" link --> Direct link to file |
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{| class="wikitable"
| colspan="5" |ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
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|Date
Line 7 ⟶ 8:
|Etch Selectivity (SiO2/PR)
|Averaged Sidewall Angle (<sup>o</sup>)
|SEM Images
|-
|10/5/2018
Line 13 ⟶ 15:
|0.74
|77.9
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|-
|1/28/2019
Line 19 ⟶ 22:
|0.77
|
|}
▲[https://www.nanotech.ucsb.edu/wiki/index.php/File:SiO2_Etch_using_ICP2_with_O2-a.pdf]
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Revision as of 07:03, 30 January 2019
| ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec | |||||
| Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | SEM Images |
| 10/5/2018 | SiO2#01 | 95.2 | 0.74 | 77.9 | |
| 1/28/2019 | I21902 | 92.1 | 0.77 | [1] | |