PECVD1 Recipes: Difference between revisions
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*[[media:PECVD1-SiON-Recipe.pdf|SiO<sub>x</sub>N<sub>y</sub> Deposition Recipes - Varying N/O Ratio]] |
*[[media:PECVD1-SiON-Recipe.pdf|SiO<sub>x</sub>N<sub>y</sub> Deposition Recipes - Varying N/O Ratio]] |
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*[[media:PECVD1-SiON-Plot.pdf|SiO<sub>x</sub>N<sub>y</sub> Stress/Index vs. O/N Ratio]] |
*[[media:PECVD1-SiON-Plot.pdf|SiO<sub>x</sub>N<sub>y</sub> Stress/Index vs. O/N Ratio]] |
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Revision as of 18:28, 16 September 2014
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
- SiN Standard Recipe
- SiN Data September 2014
- SiN 1000A Thickness uniformity 2014
- Low Stress Si3N4 - Variable Stress Recipes
- Low Stress Si3N4 - Variable Stress Plot
- Deposition rate~11.30nm/min (users must calibrate this prior to critical deps)
- HF e.r.~90nm/min
- Stress~444MPa
- Refractive Index~1.940
SiO2 deposition (PECVD #1)
- Deposition rate~35.22nm/min (users must calibrate this prior to critical deps)
- HF e.r.~646nm/min
- Stress~-407MPa
- Refractive Index~1.460
SiOxNy deposition (PECVD #1)
- Deposition rate~35.22nm/min (users must calibrate this prior to critical deps)
- HF e.r.~646nm/min
- Stress~-407MPa
- Refractive Index~1.460