OLD - PECVD2 Recipes: Difference between revisions
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dERkYm85bGtYQVpjVk5GTGJuMkg2anc&usp=drive_web#gid=sharing Nitride2 Thickness uniformity 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dERkYm85bGtYQVpjVk5GTGJuMkg2anc&usp=drive_web#gid=sharing Nitride2 Thickness uniformity 2014] |
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*Deposition Rate: ≈ |
*Deposition Rate: ≈ 7.99 nm/min (users must calibrate this prior to critical deps) |
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*Refractive Index: ≈ 1. |
*Refractive Index: ≈ 1.958 |
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*Stress ≈ |
*Stress ≈ 495MPa |
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*HF etch rate:~49nm/min |
*HF etch rate:~49nm/min |
||
Revision as of 14:56, 14 October 2014
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
- Deposition Rate: ≈ 7.99 nm/min (users must calibrate this prior to critical deps)
- Refractive Index: ≈ 1.958
- Stress ≈ 495MPa
- HF etch rate:~49nm/min
SiO2 deposition (PECVD #2)
- Deposition Rate: ≈ 28.50 nm/min (users must calibrate this prior to critical deps)
- Refractive Index: ≈ 1.474
- Stress ≈ -259MPa
- HF etch rate~626nm/min
LS SiN deposition (PECVD #2)
- Deposition Rate: ≈ 8.14 nm/min (users must calibrate this prior to critical deps)
- Refractive Index: ≈ 1.935
- Stress ≈ -7.18MPa
- HF etch rate~48nm/min